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APM3054N
N-Channel Enhancement Mode MOSFET
Features
* * * *
30V/15A, RDS(ON)=48m(typ.) @ VGS=10V RDS(ON)=75m(typ.) @ VGS=4.5V Super High Dense Cell Design High Power and Current Handling Capability TO-252 and SOT-223 Package
Pin Description
1
2
3
1
2
3
G
D
S
G
D
S
Top View of TO-252
Top View of SOT-223
Applications
* *
1 2 3
Switching Regulators Switching Converters
G D S
Top View of SOT-89
Ordering and Marking Information
A P M 3 054 N
H a n d lin g C o d e Tem p. R ange Package C ode Package C ode D : S O T -8 9 U : T O -2 5 2 O p e ra tin g J u n c tio n T e m p . R a n g e C : -5 5 to 1 2 5 C H a n d lin g C o d e TR : Tape & R eel V : S O T -2 2 3
AP M 3054N U :
AP M 3054N XXXXX
XXXXX
- D a te C o d e
A P M 3 0 5 4 N D /V :
AP M 3054N XXXXX
X X X X X - D a te C o d e
Absolute Maximum Ratings
Symbol VDSS VGSS ID IDM IS Drain-Source Voltage Gate-Source Voltage Parameter
(TA = 25C unless otherwise noted)
Rating 30 20 15 30 8 Unit V A A
Maximum Drain Current - Continuous Maximum Drain Current - Pulsed Diode Continuous Forward Current
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. Copyright ANPEC Electronics Corp. Rev. A.2 - Aug., 2002 1 www.anpec.com.tw
APM3054N
Absolute Maximum Ratings (Cont.)
Symbol ISM Parameter Diode Maximum Pulse Current TO-252 T A =25C PD Maximum Power Dissipation T A =100C TJ T STG Maximum Junction Temperature Storage Temperature Range SOT-223 TO-252 SOT-223
(TA = 25C unless otherwise noted)
Rating 32 62.5 W 3 25 W 1.2 150 -55 to 150 C C Unit A
Electrical Characteristics
Symbol Static BVDSS IDSS VGS(th) IGSS RDS(ON) VSD Dynamic Qg Qgs Qgd td(ON) tr td(OFF) tf Ciss Coss C rss Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-on Delay Time Turn-on Rise Time Turn-off Delay Time Turn-off Fall Time Input Capacitance Output Capacitance Reverse Transfer Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Threshold Voltage Gate Leakage Current Drain-Source On-state Resistance Diode Forward Voltage Parameter
(TA = 25C unless otherwise noted)
APM3054N Typ. Max.
Test Condition
Min.
Unit
VGS=0V, IDS=250A VDS=24V, VGS =0V VDS=VGS, IDS=250A VGS=20V, V DS=0V VGS=10V, IDS=12A VGS=4.5V, IDS=6A ISD=8A, VGS=0V
30 1 1 3 100 48 75 0.6 54 90 1.3
V A V nA m V
9 VDS=15V, VGS =5V, IDS=10A 5.4 2.4 11 VDD=15V,ID=2A, VGS=10V, RG=6 17 37 20 VGS=0V VDS=25V Frequency=1.0MHz 400 75 45
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nC
ns
pF
Copyright ANPEC Electronics Corp. Rev. A.2 - Aug., 2002
2
APM3054N
Typical Characteristics
Output Characteristics
20
VGS=6,7,8,9,10V
Transfer Characteristics
25
TJ=-55C
ID-Drain Current (A)
15
VGS=5V
ID-Drain Current (A)
20
TJ=25C TJ=125C
15
10
10
VGS=4V
5
VGS=3V
5
0 0 1 2 3 4 5
0 0
2
4
6
8
10
VDS - Drain-to-Source Voltage (V)
VGS - Gate-to-Source Voltage (V)
Threshold Voltage vs. Temperature
1.2
0.12
IDS=250uA
On-Resistance vs. Drain Current
VGS(th)-Threshold Voltage (V) (Normalzed)
1.1 1.0 0.9 0.8 0.7 0.6 -50
RDS(on)-On-Resistance ()
0.10
VGS=4.5V
0.08 0.06
VGS=10V
0.04 0.02 0.00
-25
0
25
50
75
100 125 150
0
2
4
6
8
10
Tj - Junction Temperature (C)
ID - Drain Current (A)
Copyright ANPEC Electronics Corp. Rev. A.2 - Aug., 2002
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APM3054N
Typical Characteristics
On-Resistance vs. Gate-to-Source Voltage
0.35
ID=6A
On-Resistance vs. Junction Temperature
0.10
VGS=10V
RDS(on)-On-Resistance ()
0.30 0.25 0.20 0.15 0.10 0.05 0.00
RDS(on)-On-Resistance () (Normalized)
0.09 ID=12A 0.08 0.07 0.06 0.05 0.04 0.03 0.02 0.01
2
3
4
5
6
7
8
9
10
0.00 -50
-25
0
25
50
75
100
125
150
VGS - Gate-to-Source Voltage (V)
TJ - Junction Temperature (C)
On-Resistance vs. Junction Temperature
0.10
Gate Charge
10
VDS=15V IDS=10A
0.08 0.07 0.06 0.05 0.04 0.03 0.02 0.01 0.00 -50 -25 0 25 50 75 100 125 150
VGS-Gate-Source Voltage (V)
RDS(on)-On-Resistance ()
VGS=10V 0.09 IDS=12A
8
6
4
2
0
2.5
5.0
7.5
10.0
12.5
15.0
TJ - Junction Temperature (C)
QG - Gate Charge (nC)
Copyright ANPEC Electronics Corp. Rev. A.2 - Aug., 2002
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APM3054N
Typical Characteristics
Capacitance
750 625
Source-Drain Diode Forward Voltage
30
IS-Source Current (A)
Capacitance (pF)
500 Ciss 375 250 125 0
10
Coss Crss 0 5 10 15 20 25 30
TJ=150C
TJ=25C
1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
VDS - Drain-to-Source Voltage (V)
VSD -Source-to-Drain Voltage (V)
Single Pulse Power
TO-252
Single Pulse Power
SOT-223
250
140 120
200
100
Power (W)
150
Power (W)
80 60 40
100
50
20
0 1E-3
0.01
0.1
1
10
100
1000
0 0.01
0.1
1
10
100
1000
Time (sec)
Time (sec)
Copyright ANPEC Electronics Corp. Rev. A.2 - Aug., 2002
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APM3054N
Typical Characteristics
Normalized Thermal Transient Impedence, Junction to Ambient
TO-252
Normalized Effective Transient Thermal Impedance
1
Duty Cycle=0.5
D=0.2 D=0.1 D=0.05
0.1
D=0.02 D=0.01 SINGLE PULSE
1.Duty Cycle, D=t1/t2 2.Per Unit Base=RthJA=50C/W 3.TJM-TA=PDMZthJA
0.01 1E-4
1E-3
0.01
0.1
1
10
100
1000
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedence, Junction to Ambient
Normalized Effective Transient Thermal Impedance
1
Duty Cycle = 0.5 D= 0.2
SOT-223
0.1
D= 0.1 D= 0.05 D= 0.02
0.01
D= 0.01 1.Duty Cycle, D=t1/t2 2.Per Unit Base=RthJA=42C/W 3.TJM-TA=PDMZthJA
SINGLE PULSE
1E-3 1E-4
1E-3
0.01
0.1
1
10
100
1000
Square Wave Pulse Duration (sec)
Copyright ANPEC Electronics Corp. Rev. A.2 - Aug., 2002
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APM3054N
Package Information
SOT-89 (Reference EIAJ ED-7500A Reg stration SC-62)
D
D1
a E H 1 2 3
L B1 B e e1 C
A a
D im A B B1 C D D1 e e1 E H L
M illim eters M in. 1.40 0.40 0.35 0.35 4.40 1.35 1.50 B SC 3.00 B SC 2.29 3.75 0.80 2.60 4.25 1.20 10 0.090 0.148 0.031 M ax. 1.60 0.56 0.48 0.44 4.60 1.83 M in. 0.055 0.016 0.014 0.014 0.173 0.053
Inches M ax. 0.063 0.022 0.019 0.017 0.181 0.072 0.059 BSC 0.118 B SC 0.102 0.167 0.047 10
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APM3054N
Package Information
TO-252( Reference JEDEC Registration TO-252)
E b2 L2 A C1
D H L1 L b e1 C A1
Dim A A1 b b2 C C1 D E e1 H L L1 L2
Mi ll im et er s Min . 2. 1 8 0. 8 9 0. 5 08 5. 2 07 0. 4 6 0. 4 6 5. 3 34 6. 3 5 3. 9 6 9. 3 98 0. 5 1 0. 6 4 0. 8 9 1. 0 2 2. 0 32
8
Inc he s Ma x . 2. 3 9 1. 2 7 0. 8 9 5. 4 61 0. 5 8 0. 5 8 6. 2 2 6. 7 3 5. 1 8 10 . 41 Min . 0. 0 86 0. 0 35 0. 0 20 0. 2 05 0. 0 18 0. 0 18 0. 2 10 0. 2 50 0. 1 56 0. 3 70 0. 0 20 0. 0 25 0. 0 35 0. 0 40 0. 0 80
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Ma x . 0. 0 94 0. 0 50 0. 0 35 0. 2 15 0. 0 23 0. 0 23 0. 2 45 0. 2 65 0. 2 04 0. 4 10
Copyright ANPEC Electronics Corp. Rev. A.2 - Aug., 2002
APM3054N
Package Information
SOT-223( Reference JEDEC Registration SOT-223)
D B1
A c
a
H
E L K e e1 b A1
B
Dim A A1 B B1 c D E e e1 H L K Min. 1.50 0.02 0.60 2.90 0.28 6.30 3.30
Millimeters Max. 1.80 0.08 0.80 3.10 0.32 6.70 3.70 2.3 BSC 4.6 BSC 6.70 0.91 1.50 0 13
9
Inches Min. 0.06 0.02 0.11 0.01 0.25 0.13 0.09 BSC 0.18 BSC 7.30 1.10 2.00 10 0.26 0.04 0.06 0 13
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Max. 0.07 0.03 0.12 0.01 0.26 0.15
0.29 0.04 0.08 10
Copyright ANPEC Electronics Corp. Rev. A.2 - Aug., 2002
APM3054N
Physical Specifications
Terminal Material Lead Solderability Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb) Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3.
Reflow Condition
(IR/Convection or VPR Reflow)
Reference JEDEC Standard J-STD-020A APRIL 1999
temperature
Peak temperature
183C Pre-heat temperature
Time
Classification Reflow Profiles
Convection or IR/ Convection Average ramp-up rate(183C to Peak) 3C/second max. 120 seconds max Preheat temperature 125 25C) 60 - 150 seconds Temperature maintained above 183C Time within 5C of actual peak temperature 10 -20 seconds Peak temperature range 220 +5/-0C or 235 +5/-0C Ramp-down rate 6 C /second max. 6 minutes max. Time 25C to peak temperature VPR 10 C /second max.
60 seconds 215-219C or 235 +5/-0C 10 C /second max.
Package Reflow Conditions
pkg. thickness 2.5mm and all bgas Convection 220 +5/-0 C VPR 215-219 C IR/Convection 220 +5/-0 C pkg. thickness < 2.5mm and pkg. volume 350 mm pkg. thickness < 2.5mm and pkg. volume < 350mm Convection 235 +5/-0 C VPR 235 +5/-0 C IR/Convection 235 +5/-0 C
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Copyright ANPEC Electronics Corp. Rev. A.2 - Aug., 2002
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APM3054N
R e lia b ilit y te s t p r o g r a m
Te s t ite m S O L D E R A B IL IT Y H O LT PCT TST ESD L a tc h -U p M e th o d M IL -S T D -8 8 3 D -2 0 0 3 M IL -S T D -8 8 3 D -1 0 0 5 .7 J E S D -2 2 - B , A 1 0 2 M IL -S T D -8 8 3 D -1 0 11 .9 M IL -S T D -8 8 3 D -3 0 1 5 .7 JESD 78 D e s c rip tio n 2 45 C , 5 S E C 1 0 0 0 H rs B ia s @ 1 2 5 C 1 6 8 H rs , 1 0 0 % R H , 1 2 1 C -6 5 C ~ 1 5 0 C , 2 0 0 C y c le s V H B M > 2 K V, V M M > 2 0 0 V 1 0 m s , I tr > 1 0 0 m A
Carrier Tape
Po E P1 P D
t
F W
Bo
Ao
Ko D1
T2
J C A B
T1
Copyright ANPEC Electronics Corp. Rev. A.2 - Aug., 2002
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APM3054N
Application A 178 1 SOT-89 F 5.5 0.05 Application A 330 3 TO-252 F 7.5 0.1 Application A 3301 SOT-223 F 5.5 0.05 B 70 2 D 1.5 0.1 B 100 2 D 1.5 +0.1 B 621.5 D 1.5+ 0.1 C J T1 14 2 P1 2.0 0.1 T1 16.4 + 0.3 -0.2 P1 2.0 0.1 T1 12.4 +0.2 P1 T2 1.3 0.3 Ao 4.8 0.1 T2 2.5 0.5 Ao 6.8 0.1 T2 2 0.2 Ao 13.5 0.15 3 0.15 D1 1.5 0.1 C 13 0. 5 D1 1.5 0.25 C 12.75 0.15 D1 1.5+ 0.1 Po 4.0 0.1 J 2 0.5 Po 4.0 0.1 J 2 0.6 Po W 12 + 0.3 12 - 0.1 Bo 4.5 0.1 W 16+ 0.3 - 0.1 Bo 10.4 0.1 W 12 0.3 Bo 7.5 0.1 P 8 0.1 Ko E 1.75 0.1 t
1.80 0.1 0.30.013 P 8 0.1 Ko 2.5 0.1 P 8 0.1 Ko 2.1 0.1 E 1.75 0.1 t 0.30.05 E 1.75 0.1 t 0.30.05
4.0 0.1 2.0 0.05 6.9 0.1
Cover Tape Dimensions
Application SOT- 89 SOT- 223 TO- 252 Carrier Width 12 12 16 Cover Tape Width 9.3 9.3 13.3 Devices Per Reel 1000 2500 2500
Customer Service
Anpec Electronics Corp. Head Office : 5F, No. 2 Li-Hsin Road, SBIP, Hsin-Chu, Taiwan, R.O.C. Tel : 886-3-5642000 Fax : 886-3-5642050 Taipei Branch : 7F, No. 137, Lane 235, Pac Chiao Rd., Hsin Tien City, Taipei Hsien, Taiwan, R. O. C. Tel : 886-2-89191368 Fax : 886-2-89191369
Copyright ANPEC Electronics Corp. Rev. A.2 - Aug., 2002
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