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| BC 617 BC 618 NPN Silicon Darlington Transistors BC 617 BC 618 High current gain q High collector current q 2 1 3 Type BC 617 BC 618 Marking - Ordering Code Q62702-C1137 Q62702-C1138 Pin Configuration 1 2 3 C B E Package1) TO-92 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Peak collector current Base current Peak base current Total power dissipation, TC = 66 C Junction temperature Storage temperature range Thermal Resistance Junction - ambient Junction - case2) Rth JA Rth JC Symbol VCE0 VCB0 VEB0 IC ICM IB IBM Ptot Tj Tstg Values BC 617 40 50 BC 618 55 80 12 500 800 100 200 625 150 Unit V mA mW C - 65 ... + 150 200 135 K/W 1) 2) For detailed information see chapter Package Outlines. Mounted on Al heat sink 15 mm x 25 mm x 0.5 mm. Semiconductor Group 1 5.91 BC 617 BC 618 Electrical Characteristics at TA = 25 C, unless otherwise specified. Parameter Symbol min. DC characteristics Collector-emitter breakdown voltage IC = 10 mA BC 617 BC 618 Collector-base breakdown voltage IC = 100 A BC 617 BC 618 Emitter-base breakdown voltage IE = 10 A Collector cutoff current VCB = 40 V VCB = 60 V VCB = 40 V, TA = 150 C VCB = 60 V, TA = 150 C Emitter cutoff current VEB = 4 V DC current gain IC = 100 A; VCE = 5 V IC = 10 mA; VCE = 5 V1) IC = 200 mA; VCE = 5 V1) IC = 1000 mA; VCE = 5 V1) BC 617 BC 618 BC 617 BC 618 BC 617 BC 618 BC 617 BC 618 VCEsat VBEsat BC 617 BC 618 BC 617 BC 618 IEB0 hFE 4000 2000 10000 4000 20000 10000 10000 4000 - - - - - - - - - - - - - - - - 70000 50000 - - 1.1 1.6 V V(BR)EB0 ICB0 - - - - - - - - - - 100 100 10 10 100 nA nA A A Values typ. max. Unit V(BR)CE0 40 55 V(BR)CB0 50 80 12 - - - - - - - - - - V nA - Collector-emitter saturation voltage1) IC = 200 mA; IB = 0.2 mA Base-emitter saturation voltage1) IC = 200 mA; IB = 0.2 mA 1) Pulse test: t 300 s, D 2 %. Semiconductor Group 2 BC 617 BC 618 Electrical Characteristics at TA = 25 C, unless otherwise specified. Parameter Symbol min. AC characteristics Transition frequency IC = 50 mA, VCE = 5 V, f = 20 MHz Output capacitance VCB = 10 V, f = 1 MHz fT Cobo - - 150 3.5 - - MHz pF Values typ. max. Unit Total power dissipation Ptot = f (TA; TC) Collector cutoff current ICB0 = f (TA) VCB = 40 V, 60 V Semiconductor Group 3 BC 617 BC 618 Permissible pulse load RthJA = f (tp) Transition frequency fT = f (IC) VCE = 5 V, f = 20 MHz Collector-emitter saturation voltage VCEsat = f (IC) hFE = 1000, parameter = TA Base-emitter saturation voltage VBEsat = f (IC) hFE = 1000, parameter = TA Semiconductor Group 4 BC 617 BC 618 DC current gain hFE = f (IC) Capacitance C = f (VEB, VCB) Semiconductor Group 5 |
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