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PNP Silicon RF Transistor q BF 569 For oscillators, mixers and self-oscillating mixer stages in UHF TV tuners Type BF 569 Marking LHs Ordering Code (tape and reel) Q62702-F869 Pin Configuration 1 2 3 B E C Package1) SOT-23 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation, TA 25 C Junction temperature Storage temperature range Thermal Resistance Junction - ambient2) Rth JA Symbol VCE0 VCB0 VEB0 IC IB Ptot Tj Tstg Values 35 40 3 30 5 280 150 - 55 ... + 150 Unit V mA mW C 450 K/W 1) 2) For detailed information see chapter Package Outlines. Package mounted on alumina 15 mm x 16.7 mm x 0.7 mm. Semiconductor Group 1 07.94 BF 569 Electrical Characteristics at TA = 25 C, unless otherwise specified. Parameter Symbol min. DC Characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector cutoff current VCB = 20 V, IE = 0 DC current gain IC = 3 mA, VCE = 10 V AC Characteristics Transition frequency IC = 3 mA, VCE = 10 V, f = 100 MHz Collector-base capacitance VCB = 10 V, VBE = 0 V, f = 1 MHz Collector-emitter capacitance VCE = 10 V, VBE = 0 V, f = 1 MHz Noise figure IC = 3 mA, VCB = 10 V, f = 800 MHz RS = 60 Common base power gain IC = 3 mA, VCB = 10 V, f = 800 MHz RL = 500 fT Ccb Cce F - - - - 950 0.32 0.15 4.5 - - - - dB MHz pF V(BR) CE0 ICB0 hFE 35 - 20 - - 50 - 100 - V nA - Values typ. max. Unit Gp - 14.8 - Semiconductor Group 2 BF 569 Total power dissipation Ptot = f (TA) Transition frequency fT = f (IC) VCE = 10 V, f = 100 MHz Collector-base capacitance Ccb = f (VCB) f = 1 MHz Semiconductor Group 3 |
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