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| Preliminary data SIPMOS(R) Power Transistor * N-Channel * SPP80N03 SPB80N03 Enhancement mode * Avalanche rated * dv/dt rated * 175C operating temperature Pin 1 G Type SPP80N03 SPB80N03 Pin 2 D Pin 3 S VDS 30 V ID 80 A RDS(on) 0.006 Package Ordering Code @ VGS VGS = 10 V P-TO220-3-1 Q67040-S4734-A2 P-TO263-3-2 Q67040-S4734-A3 Maximum Ratings, at Tj = 25 C, unless otherwise specified Parameter Continuous drain current Symbol Value 80 Unit A 80 320 700 80 30 6 mJ A mJ kV/s ID TC = 25 C, 1) TC = 100 C Pulsed drain current TC = 25 C Avalanche energy, single pulse ID = 80 A, VDD = 25 V, RGS = 25 Avalanche current,periodic limited by jmax T Avalanche energy,periodic limited by j(max) T Reverse diode dv/dt ID puls EAS IAR EAR dv/dt IS = 80 A, VDS = 24 V, di/dt = 200 A/s, Tjmax = 175 C Gate source voltage Power dissipation VGS Ptot Tj Tstg 20 300 -55 ... +175 -55 ... +175 55/175/56 V W C TC = 25 C Operating temperature Storage temperature IEC climatic category; DIN IEC 68-1 1current limited by bond wire 1 06 / 1998 Semiconductor Group Preliminary data Electrical Characteristics Parameter at Tj = 25 C, unless otherwise specified Thermal Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient SMD version, device on PCB: @ min. footprint @ 6 cm2 cooling area1) Symbol min. Values typ. 62 tbd tbd SPP80N03 SPB80N03 Unit max. 0.5 K/W RthJC RthJA RthJA - Static Characteristics Drain- source breakdown voltage V(BR)DSS VGS(th) IDSS 30 2.1 3 4 V VGS = 0 V, ID = 0.25 mA, Tj = 25 C Gate threshold voltage,VGS = VDS ID = 240 A, Tj = 25 C Zero gate voltage drain current VDS = 30 V, VGS = 0 V, Tj = 25 C VDS = 30 V, VGS = 0 V, Tj = 150 C Gate-source leakage current VGS = 20 V, VDS = 0 V Drain-Source on-state resistance VGS = 10 V, ID = 80 A A 0.1 10 1 100 100 nA - IGSS RDS(on) 0.0038 0.006 1 Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer, 70m thick) copper area for drain connection. PCB is vertical without blown air. Semiconductor Group 2 06 / 1998 Preliminary data Electrical Characteristics Parameter at Tj = 25 C, unless otherwise specified Dynamic Characteristics Transconductance Symbol min. Values typ. 93 3970 1920 775 22 SPP80N03 SPB80N03 Unit max. 5000 2500 1000 33 ns S pF gfs Ciss Coss Crss td(on) 30 - VDS2*ID*RDS(on)max , ID = 80 A Input capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz Output capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz Reverse transfer capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz Turn-on delay time VDD = 15 V, VGS = 10 V, ID = 80 A, RG = 2.5 Rise time VDD = 15 V, VGS = 10 V, ID = 80 A, RG = 2.5 Turn-off delay time VDD = 15 V, VGS = 10 V, ID = 80 A, RG = 2.5 Fall time VDD = 15 V, VGS = 10 V, ID = 80 A, RG = 2.5 tr - 25 38 td(off) - 55 85 tf - 40 60 Semiconductor Group 3 06 / 1998 Preliminary data SPP80N03 SPB80N03 Electrical Characteristics Parameter at Tj = 25 C, unless otherwise specified Dynamic Characteristics Gate charge at threshold Symbol min. Values typ. 4 90 112 4.7 max. 6 135 175 V nC nC Unit QG(th) Qg(7) Qg V(plateau) - VDD = 24 V, ID0,1 A, VGS = 0 to 1 V Gate charge at Vgs=7V VDD = 24 V, ID = 80 A, VGS = 0 to 7 V Gate charge total VDD = 24 V, ID = 80 A, VGS = 0 to 10 V Gate plateau voltage VDD = 24 V, ID = 80 A Reverse Diode Inverse diode continuous forward current IS ISM VSD trr Qrr - 1.1 60 0.06 80 320 1.7 90 0.09 A T C = 25 C Inverse diode direct current,pulsed T C = 25 C Inverse diode forward voltage VGS = 0 V, IF = 160 A Reverse recovery time VR = 15 V, IF=IS , diF /dt = 100 A/s Reverse recovery charge VR = 15 V, IF=l S , diF/dt = 100 A/s V ns C Semiconductor Group 4 06 / 1998 Preliminary data Power Dissipation Drain current SPP80N03 SPB80N03 Ptot = f (TC) SPP80N03 ID = f (TC) parameter: VGS 10 V SPP80N03 320 W 90 A Ptot 240 ID 70 60 200 50 160 40 120 30 80 20 10 0 0 40 0 0 20 40 60 80 100 120 140 C 175 180 20 40 60 80 100 120 140 C 180 Tj Transient thermal impedance ZthJC = f (tp ) parameter: D = tp/T 10 1 K/W 10 0 Z thJC D=0.5 10 -1 0.2 0.1 0.05 10 -2 0.02 0.01 10 -3 0.005 10 -4 -7 -6 10 10 10 -5 10 -4 10 -3 10 -2 10 -1 s 10 1 tp Semiconductor Group 5 06 / 1998 Preliminary data Typ. output characteristics Drain-source on-resistance SPP80N03 SPB80N03 I D = f (VDS) parameter: tp = 80 s SPP80N03 RDS(on) = f (Tj ) parameter : ID = 80 A, VGS = 10 V SPP80N03 0.014 180 A Ptot = 300W lkh f ji g e VGS [V] a b 0.012 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 10.0 ID 140 120 100 c d RDS(on) 0.011 0.010 0.009 0.008 0.007 0.006 0.005 0.004 0.003 c d e f g h i 98% 80 60 40 20 0 0.0 a j typ bk l 0.002 0.001 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 V 5.0 0.000 -60 -20 20 60 100 C 180 VDS Tj Semiconductor Group 6 06 / 1998 Preliminary data Typ. transfer characteristics ID= f ( VGS ) parameter: tp = 80 s Gate threshold voltage SPP80N03 SPB80N03 VGS(th) = f (Tj ) parameter : VGS = VDS , ID = 240 A 5.0 V 4.4 VDS 2 x I D x R DS(on)max 9 A ID 7 6 5 4 3 2 1 4.0 V GS(th) 3.6 I(DS) [A] 3.2 2.8 2.4 2.0 1.6 typ max 1.2 0.8 0.4 min 0 3.5 3.8 4.0 4.2 4.5 4.8 5.0 5.2 5.5 V 6.0 0.0 -60 -20 20 60 100 140 V 200 VGS Tj Typ. capacitances Forward characteristics of reverse diode C = f(V DS) Parameter: V GS=0 V, f=1 MHz 9500 nF IF = f (VSD) parameter: Tj , tp = 80 s SPP80N03 10 3 A 7500 C IF 10 2 6500 5500 4500 Ciss 3500 2500 Coss 10 1 Tj = 25 C typ Tj = 175 C typ Tj = 25 C (98%) Tj = 175 C (98%) Crss 1500 500 0 10 0 0.0 5 10 15 20 25 30 V 40 0.4 0.8 1.2 1.6 2.0 2.4 V 3.0 VDS Semiconductor Group 7 VSD 06 / 1998 Preliminary data Avalanche Energy E AS = f (Tj) parameter: ID = 80 A,VDD = 25 V Typ. gate charge SPP80N03 SPB80N03 VGS = f (QGate) parameter: ID puls =80A SPP80N03 RGS = 25 700 mJ 16 V 600 EAS 550 500 450 400 350 300 250 200 VGS 12 10 8 0,2 VDS max 0,8 VDS max 6 4 150 100 50 0 20 40 60 80 100 120 140 C 2 180 0 0 20 40 60 80 100 120 Tj nC 160 QGate Drain-source breakdown voltage V(BR)DSS = f (Tj) SPP80N03 36 V 34 33 32 31 30 29 28 27 0 V(BR)DSS 20 40 60 80 100 120 140 C 180 Tj Semiconductor Group 8 06 / 1998 Preliminary data SPP80N03 SPB80N03 Edition 7.97 Published by Siemens AG, Bereich Halbleiter Vetrieb, Werbung, Balanstrae 73, 81541 Munchen (c) Siemens AG 1997 All Rights Reserved. Attention please! As far as patents or other rights of third parties are concerned, liability is only assumed for components, not for applications, processes and circuits implemented within components or assemblies. The information describes a type of component and shall not be considered as warranted characteristics. Terms of delivery and rights to change design reserved. For questions on technology, delivery and prices please contact the Semiconductor Group Offices in Germany or the Siemens Companies and Representatives worldwide (see address list). Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Siemens Office, Semiconductor Group. Siemens AG is an approved CECC manufacturer. Packing Please use the recycling operators known to you. We can also help you - get in touch with your nearest sales office. By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs incurred. Components used in life-support devices or systems must be expressly authorized for such purpose! Critical components 1 of the Semiconductor Group of Siemens AG, may only be used in life-support devices or systems2 with the express written approval of the Semiconductor Group of Siemens AG. 1)A critical component is a component used in a life-support device or system whose failure can reasonably be expected to cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system. 2)Life support devices or systems are intended (a) to be implanted in the human body, or (b) to support and/or ii d i d/ fh lif f h f il i i bl h h h lh f h Semiconductor Group 9 06 / 1998 |
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