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Transistor
2SC4627J
Silicon NPN epitaxial planer type
For high-frequency amplification
Unit: mm
1.600.05 0.80 0.800.05 0.425 0.425
s Features
q q
1.000.05 1.60-0.03
+0.05
0.50
0.50
q
0.85-0.03
+0.05
+0.03 0.12-0.01
(Ta=25C)
Ratings 30 20 3 15 125 125 -55 ~ +125 Unit V V V mA mW C C
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature
Symbol VCBO VCEO VEBO IC PC Tj Tstg
1:Base 2:Emitter 3:Collector
EIAJ:SC-81 SS-Mini Flat Type Package (J type)
Marking symbol : U
s Electrical Characteristics
Parameter Collector to base voltage Emitter to base voltage Forward current transfer ratio Base to emitter voltage Common emitter reverse transfer capacitance Transition frequency Noise figure Power gain
(Ta=25C)
Symbol VCBO VEBO hFE VBE Cre fT NF PG Conditions IC = 10A, IE = 0 IE = 10A, IC = 0 VCB = 6V, IE = -1mA VCB = 6V, IE = -1mA VCB = 6V, IE = -1mA, f = 10.7MHz VCB = 6V, IE = -1mA, f = 200MHz VCB = 6V, IE = -1mA, f = 100MHz VCB = 6V, IE = -1mA, f = 100MHz min 30 3 40 720 0.8 450 3.3 24 1 650 260 mV pF MHz dB dB typ max Unit V V
0 to 0.1
0.70-0.03
s Absolute Maximum Ratings
+0.05
0.270.02
Optimum for RF amplification of FM/AM radios. High transition frequency fT. SS-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing. (Flat type)
0.80
0.80
1
Transistor
PC -- Ta
200 12 Ta=25C 10 IB=100A 10
2SC4627J
IC -- VCE
12 VCE=6V Ta=25C
IC -- I B
Collector power dissipation PC (mW)
Collector current IC (mA)
8
Collector current IC (mA)
160
80A
8
120
6
60A
6
80
4
40A
4
40
2
20A
2
0 0 20 40 60 80 100 120 140 160
0 0 3 6 9 12 15 18
0 0 30 60 90 120 150 180
Ambient temperature Ta (C)
Collector to emitter voltage VCE (V)
Base current IB (A)
IC -- VBE
Collector to emitter saturation voltage VCE(sat) (V)
60 VCE=6V 50 10 3 1 0.3
VCE(sat) -- IC
IC/IB=10 120
hFE -- IC
VCE=6V
Forward current transfer ratio hFE
100
Ta=75C
Collector current IC (mA)
40 25C
80
25C
25C 0.1
Ta=75C
30 Ta=75C 20
60
-25C
-25C 0.03 0.01 0.003 0.001 0.1
-25C
40
10
20
0 0 0.2 0.4 0.6 0.8 1.0 1.2
0 0.3 1 3 10 30 100 1 3 10 30 100 300 1000
Base to emitter voltage VBE (V)
Collector current IC (mA)
Collector current IC (mA)
Cob -- VCB
3.0
Collector output capacitance Cob (pF)
2.5
f=1MHz IE=0 Ta=25C
2.0
1.5
1.0
0.5
0 1 3 10 30 100
Collector to base voltage VCB (V)
2
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(1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuit examples of the products. It does not constitute the warranting of industrial property, the granting of relative rights, or the granting of any license. (3) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: * Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. * Any applications other than the standard applications intended. (4) The products and product specifications described in this material are subject to change without notice for reasons of modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (5) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, redundant design is recommended, so that such equipment may not violate relevant laws or regulations because of the function of our products. (6) When using products for which dry packing is required, observe the conditions (including shelf life and after-unpacking standby time) agreed upon when specification sheets are individually exchanged. (7) No part of this material may be reprinted or reproduced by any means without written permission from our company.
Please read the following notes before using the datasheets
A. These materials are intended as a reference to assist customers with the selection of Panasonic semiconductor products best suited to their applications. Due to modification or other reasons, any information contained in this material, such as available product types, technical data, and so on, is subject to change without notice. Customers are advised to contact our semiconductor sales office and obtain the latest information before starting precise technical research and/or purchasing activities. B. Panasonic is endeavoring to continually improve the quality and reliability of these materials but there is always the possibility that further rectifications will be required in the future. Therefore, Panasonic will not assume any liability for any damages arising from any errors etc. that may appear in this material. C. These materials are solely intended for a customer's individual use. Therefore, without the prior written approval of Panasonic, any other use such as reproducing, selling, or distributing this material to a third party, via the Internet or in any other way, is prohibited.
2001 MAR

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