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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK1824
N-CHANNEL MOS FET FOR SWITCHING
The 2SK1824 is a N-channel vertical type MOS FET that is driven at 2.5 V. Because this MOS FET can be driven on a low voltage and because it is not necessary to consider the drive current, the 2SK1824 is ideal for driving the actuator of power-saving systems,
1.6 0.1
PACKAGE DIMENSIONS (in mm)
0.3 0.05 0.1 +0.1 -0.05
such as VCR cameras and headphone stereo systems. Moreover, the 2SK1824 is housed in a super small mini-mold package so that it can help increase the mounting density on the printed circuit board and lower the mounting cost, contributing to miniaturization of the application systems.
0.8 0.1
D 0 to 0.1 G 0.2 +0.1 -0 0.5 0.5 0.6 0.75 0.05 S
FEATURES
* Small mounting area: about 60 % of the conventional mini-mold package (SC-70) * Can be automatically mounted * Can be directly driven by 3-V IC
1.0 1.6 0.1
EQUIVALENT CIRCUIT
Drain (D)
The internal diode in the right figure is a parasitic diode. The protection diode is to protect the product from damage due to static electricity. If there is a danger that an extremely high voltage will be applied across the gate and source in the actual circuit, a gate protection circuit such as an external constant-voltage diode is necessary.
Gate (G) Gate protection diode Source (S) Internal diode PIN CONNECTIONS S: Source D: Drain G: Gate Marking: B1
ABSOLUTE MAXIMUM RATINGS (TA = 25 C)
PARAMETER Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (Pulse) SYMBOL VDSS VGSS ID(DC) ID(pulse) PW 10 ms Duty cycle 50 % 3.0 cm2 x 0.64 mm, ceramic substrate used VGS = 0 VDS = 0 TEST CONDITIONS RATING 30 7 100 200 UNIT V V mA mA
Total Power Dissipation Channel Temperature Operating Temperature Storage Temperature
PT Tch Topt Tstg
200 150 -55 to +80 -55 to +150
mW C C C
Document No. D11220EJ1V0DS00 (1st edition) Date Published June 1996 P Printed in Japan
1996
2SK1824
ELECTRICAL CHARACTERISTICS (TA = 25 C)
PARAMETER Drain Cut-Off Current Gate Leakage Current Gate Cut-Off Voltage Forward Transfer Admittance Drain to Source On-State Resistance Drain to Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time SYMBOL IDSS IGSS VGS(off) |yfs| RDS(on)1 RDS(on)2 Ciss Coss Crss td(on) tr td(off) tf VDD = 5V, ID = 10 mA VGS(on) = 5 V, RG = 10 RL = 500 TEST CONDITIONS VDS = 30 V, VGS = 0 VGS = 5 V, VDS = 0 VDS = 3 V, ID = 10 A VDS = 3 V, ID = 10 mA VGS = 2.5 V, ID = 1 mA VGS = 4.0 V, ID = 10 mA VDS = 5.0 V, VGS = 0, f = 1 MHz 0.8 20 0.1 1.0 50 7 5 16 14 2 15 20 100 100 13 8 MIN. TYP. MAX. 1.0 3 1.5 UNIT
A A
V mS pF pF pF ns ns ns ns
SWITCHING TIME MEASUREMENT CIRCUIT AND CONDITIONS (Resistive Load)
RL DUT VDD RG PG.
Gate Voltage Waveform
VGS 0 10 % VGS(on)
90 %
ID Drain Current Waveform 10 %
90 % 90 % ID 10 %
0
Vin 0 = 1 s Duty cycle 1 %
td(on) ton
tr
td(off) toff
tf
2
2SK1824
TYPICAL CHARACTERISTICS (TA = 25 C)
DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 240 100 80 60 40 20 200 160 120 80 40 TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE 3.0 cm2 x 0.64 mm Using ceramic substrate
PT - Power Dissipation - mW
dT - Derating Factor - %
0
20
40
60
80
100
120
140 160
0
30
60
90
120
150
180
TC - Case Temperature - C TRANSFER CHARACTERISTICS |yfs| - Forward Transfer Admittance - mS 300 100 ID - Drain Current - mA VDS = 3 V Pulsed 600
TA - Ambient Temperature - C FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT VDS = 3 V Pulsed TA = 25 C -25 C
200 100 50 20 10 5 2 0.5
10 150 C TA = -25 C
1.0
75 C 150 C
2.5 C 0.1 7.5 C 0.01
0.001
0.5
1.0
1.5
2.0
2.5
3.0
3.5
1.0
3.0
10
30
100
200
VGS - Drain to Source Voltage - V DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE RDS(on) - Drain to Source On-State Resistance - RDS(on) - Drain to Source On-State Resistance - 13 Pulsed 11 24 20 16 12 8 4 0 0.5
ID - Drain Current - mA DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT VGS = 2.5 V Pulsed
9 ID = 0.1 A 7
TA = 150 C 75 C
25 C
5
-25 C
ID = 10 mA
3
0
1
2
3
4
5
6
7
8
1
3
10
30
60
VGS - Gate to Source Voltage - V
ID - Drain Current - mA
3
2SK1824
DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT
RDS(on) - Drain to Source On-State Resistance -
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 50 f = 1 MHz VDS = 5 V
30
VGS = 4 V Pulsed
Ciss, Coss, Crss - Capacitance - pF
30
Ciss 10 Coss
20
3 Crss 1 0.5
10 TA = 150 C 75 C
25 C
-25 C 0 0.5 1 3 10 30 100 200 0.5 1 3 10 30
ID - Drain Current - mA
VDS - Drain to Source Voltage - V SOURCE TO DRAIN DIODE FORWARD VOLTAGE 200 VGS = 0 100 Pulsed
SWITCHING CHARACTERISTICS 300
td(on), tr, td(off), tf - Switching Time - ms
td(off) 100 tf
VDD = 5 V VGS = 5 V Rin = 10
ISD - Diode Forward Current
30 10
tr
30 td(on) 10 0 10 30 100 300
3 1
0.3 0.1 0.3
0.4
0.5
0.6
0.7
0.8
0.9 1.0
1.1
ID - Drain Current - mA
VSD - Source to Drain Voltage - V
4
2SK1824
REFERENCE
Document Name NEC semiconductor device reliability/quality control system Quality grade on NEC semiconductor devices Semiconductor device mounting technology manual Guide to quality assurance for semiconductor devices Semiconductor selection guide Document No. TEI-1202 IEI-1209 C10535E MEI-1202 X10679E
5
2SK1824
[MEMO]
No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customer must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. NEC devices are classified into the following three quality grades: "Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices in "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact NEC Sales Representative in advance. Anti-radioactive design is not implemented in this product.
M4 94.11

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