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Data Sheet No. PD60200-A
IR2304(S)
HALF-BRIDGE DRIVER
Features
* * * * * * * * * Floating channel designed for bootstrap operation
to +600V. Tolerant to negative transient voltage dV/dt immune Gate drive supply range from 10 to 20V Under voltage lockout for both channels 3.3V, 5V, and 15V input logic input compatible Cross-conduction prevention logic Matched propagation delay for both channels Lower di/dt gate driver for better noise immunity Internal 100ns dead-time Output in phase with input
Product Summary
VOFFSET IO+/- (min) VOUT Delay Matching Internal deadtime ton/off (typ.) 600V max. 60 mA/130 mA 10 - 20V 50 ns 100 ns 220/220 ns
Package
Description
The IR2304(S) are a high voltage, high speed power MOSFET and IGBT driver with independent high and 8 Lead SOIC 8-Lead PDIP low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. 2106/2301/2108/2109/2302/2304 Feature Comparison The logic input is compatible with standard CrossCMOS or LSTTL output, down to 3.3V logic. The Input conduction Part Dead-Time Ground Pins logic prevention output driver features a high pulse current buffer logic stage designed for minimum driver cross-con2106/2301 COM HIN/LIN no none duction. The floating channel can be used to drive 21064 VSS/COM an N-channel power MOSFET or IGBT in the 2108 Internal 540ns COM HIN/LIN yes Programmable 0.54~5 s high side configuration which operates up to 21084 VSS/COM 2109/2302 Internal 540ns COM 600 volts. IN/SD yes
21094 2304
Programmable 0.54~5 s
VSS/COM COM
HIN/LIN
yes
Internal 100ns
Block Diagram
Vcc
up to 600V
HIN LIN
LIN HIN VCC COM
VB HO VS LO
TO LOAD
IR2304
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IR2304
Absolute Maximum Ratings
Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters are absolute voltages referenced to COM, all currents are defined positive into any lead. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.
Symbol
VS VB VHO VCC VLO VIN Com dVS/dt PD RthJA TJ TS TL High side offset voltage
Definition
High side floating supply voltage High side floating output voltage HO Low side and logic fixed supply voltage Low side output voltage LO Logic input voltage (HIN, LIN) Logic ground Allowable offset voltage SLEW RATE Package power dissipation @ TA +25C Thermal resistance, junction to ambient 8-Lead SOIC 8-Lead PDIP 8-Lead SOIC 8-Lead PDIP Junction temperature Storage temperature Lead temperature (soldering, 10 seconds)
Min.
VB - 25 -0.3 VS - 0.3 -0.3 -0.3 -0.3 VCC -25 -- -- -- -- -- -- -50 --
Max.
VB + 0.3 625 VB + 0.3 25 VCC + 0.3 VCC + 0.3 VCC + 0.3 50 0.625 1.0 200 125 150 150 300
Units
V
V/ns W
C/W
C
Recommended Operating Conditions
The input/output logic timing diagram is shown in figure 1. For proper operation the device should be used within the recommended conditions. The VS offset rating is tested with all supplies biased at 15V differential.
Symbol
VB VS VHO VLO VIN VCC TA
Definition
High side floating supply voltage High side floating supply offset voltage High side (HO) output voltage Low side (LO) output voltage Logic input voltage (HIN, LIN) Low side supply voltage Ambient temperature
Min.
VS + 10 Note 1 VS COM COM 10 -40
Max.
VS + 20 600 VB VCC VCC 20 125
Units
V
C
Note 1: Logic operational for VS of COM -5 to COM +600V. Logic state held for VS of COM -5V to COM -VBS.
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IR2304
Static Electrical Characteristics
VBIAS (VCC, VBS) = 15V and TA = 25C unless otherwise specified. The VIN, VTH and IIN parameters are referenced to COM. The VO and IO parameters are referenced to COM and VS is applicable to HO and LO.
Symbol
VCCUV+ VBSUV+ VCCUVVBSUVVCCUVH VBSUVH ILK IQBS IQCC VIH VIL VOH VOL IIN+ IINIO+ IO-
Definition
VCC and VBS supply undervoltage positive going threshold VCC and VBS supply undervoltage negative going threshold VCC supply undervoltage lockout hysteresis Offset supply leakage current Quiescent VBS supply current Quiescent VCC supply current Logic "1" input voltage Logic "0" input voltage High level output voltage, VBIAS - VO Low level output voltage, VO Logic "1" input bias current Logic "0" input bias current Output high short circuit pulse current Output low short circuit pulsed current
Min. Typ. Max. Units Test Conditions
8 7.4 0.3 -- 20 50 2.3 -- -- -- -- -- 60 130 8.9 8.2 0.7 -- 60 120 -- -- -- -- 5 1.0 -- -- 9.8 9 -- 50 150 240 -- 0.8 2.8 1.2 40 2.0 -- -- mA A V IO = 20mA VIN = 5V VIN = 0V VO = 0V PW 10 s A VB = VS = 600V VIN = 0V or 5V VIN = 0V or 5V
V
Dynamic Electrical Characteristics
VBIAS (VCC, VBS) = 15V, VS = COM, CL = 1000 pF and TA = 25C unless otherwise specified.
Symbol
ton toff tr tf DT MT
Definition
Turn-on propagation delay Turn-off propagation delay Turn-on rise time Turn-off fall time Dead time Delay matching, HS & LS turn-on/off
Min. Typ. Max. Units Test Conditions
120 130 60 20 80 -- 220 220 200 100 100 -- 320 330 300 170 190 50 ns VS = 0V VS = 0V or 600V
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IR2304
Functional Block Diagram
VB
2304
HIN
PULSE GENERATOR HV LEVEL SHIFTER
UV DETECT R PULSE FILTER R S Q
HO
VS
SHOOTTHROUGH PREVENTION
VCC
UV DETECT
LO
LIN
DELAY
COM
Lead Definitions
Symbol
VCC COM HIN LIN VB HO VS LO
Description
Low side supply voltage Logic ground and low side driver return Logic input for high side gate driver output Logic input for low side gate driver output High side floating supply High side driver output High voltage floating supply return Low side driver output
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IR2304
Lead Assignments
1
LIN
VB
8
1
LIN
VB
8
2
HIN
HO
7
2
HIN
HO
7
3
VCC
VS
6
3
VCC
VS
6
4
COM
LO
5
4
COM
LO
5
8-Lead PDIP
8-Lead SOIC
HIN
LIN
HO
Internal Deadtime
LO
Figure 1. Input/Output Functionality Diagram
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IR2304
50% HIN LIN t on tr
50%
t off
tf
HO LO
90% 10%
90% 10%
Figure 2. Switching Time Waveforms
HIN LIN
50% 50%
90%
LO HO
90%
10%
DT
DT
10%
Figure 3. Internal Deadtime Timing
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IR2304
Case outlines
8-Lead PDIP
D A 5 B
FOOTPRINT 8X 0.72 [.028]
01-6014 01-3003 01 (MS-001AB)
DIM A b c D
INCHES MIN .0532 .013 .0075 .189 .1497 MAX .0688 .0098 .020 .0098 .1968 .1574
MILLIMETERS MIN 1.35 0.10 0.33 0.19 4.80 3.80 MAX 1.75 0.25 0.51 0.25 5.00 4.00
A1 .0040
6 E
8
7
6
5 H 0.25 [.010] A
E
6.46 [.255]
1
2
3
4
e e1 H K L
8X 1.78 [.070]
.050 BASIC .025 BASIC .2284 .0099 .016 0 .2440 .0196 .050 8
1.27 BASIC 0.635 BASIC 5.80 0.25 0.40 0 6.20 0.50 1.27 8
6X
e e1
3X 1.27 [.050]
y
A C 0.10 [.004] y
K x 45
8X b 0.25 [.010]
NOTES:
A1 CAB
8X L 7
8X c
1. DIMENSIONING & TOLERANCING PER ASME Y14.5M-1994. 2. CONTROLLING DIMENSION: MILLIMETER 3. DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES]. 4. OUTLINE C ONFORMS TO JEDEC OUTLINE MS-012AA.
5 DIMENSION DOES NOT INC LUDE MOLD PROTRUSIONS. MOLD PROTRUSIONS NOT TO EXC EED 0.15 [.006]. 6 DIMENSION DOES NOT INC LUDE MOLD PROTRUSIONS. MOLD PROTRUSIONS NOT TO EXC EED 0.25 [.010]. 7 DIMENSION IS THE LENGTH OF LEAD FOR SOLDERING TO A SUBSTRATE.
8 Lead SOIC
01-6027 01-0021 11 (MS-012AA)
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245 Tel: (310) 252-7105 Data and specifications subject to change without notice. 8/1/2003
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