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| RHRU7540, RHRU7550, RHRU7560 Data Sheet April 1995 File Number 3945.1 75A, 400V - 600V Hyperfast Diodes RHRU7540, RHRU7550 and RHRU7560 (TA49067) are hyperfast diodes with soft recovery characteristics (tRR < 55ns). They have half the recovery time of ultrafast diodes and are silicon nitride passivated ion-implanted epitaxial planar construction. These devices are intended for use as freewheeling/clamping diodes and rectifiers in a variety of switching power supplies and other power switching applications. Their low stored charge and hyperfast soft recovery minimize ringing and electrical noise in many power switching circuits reducing power loss in the switching transistors. Features * Hyperfast with Soft Recovery . . . . . . . . . . . . . . . .<55ns * Operating Temperature . . . . . . . . . . . . . . . . . . . +175oC * Reverse Voltage Up To . . . . . . . . . . . . . . . . . . . . . . .600V * Avalanche Energy Rated * Planar Construction Applications * Switching Power Supplies * Power Switching Circuits Ordering Information PACKAGING AVAILABILITY PART NUMBER RHRU7540 RHRU7550 RHRU7560 PACKAGE TO-218 TO-218 TO-218 BRAND RHRU7540 RHRU7550 RHRU7560 * General Purpose Package SINGLE LEAD JEDEC STYLE TO-218 ANODE CATHODE (FLANGE) NOTE: When ordering, use the entire part number. Symbol K A Absolute Maximum Ratings TC = +25oC, Unless Otherwise Specified Peak Repetitive Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . VRRM Working Peak Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VRWM DC Blocking Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VR Average Rectified Forward Current . . . . . . . . . . . . . . . . . . . . . . . . . . IF(AV) (TC = +80oC) Repetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IFSM (Square Wave, 20kHz) Nonrepetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . IFSM (Halfwave, 1 Phase, 60Hz) Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Avalanche Energy (See Figures 10 and 11). . . . . . . . . . . . . . . . . . . . . EAVL Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . .TSTG, TJ RHRU7540 400 400 400 75 150 750 190 50 -65 to +175 RHRU7550 500 500 500 75 150 750 190 50 -65 to +175 RHRU7560 600 600 600 75 150 750 190 50 -65 to +175 UNITS V V V A A A W mj oC 1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 1-888-INTERSIL or 321-724-7143 | Copyright (c) Intersil Corporation 1999 RHRU7540, RHRU7550, RHRU7560 Electrical Specifications TC = +25oC, Unless Otherwise Specified RHRU7540 SYMBOL VF TEST CONDITION IF = 75A, TC = +25oC IF = 75A, TC = +150oC IR VR = 400V, TC = +25oC VR = 500V, TC = +25oC VR = 600V, TC = +25oC IR VR = 400V, TC = +150oC VR = 500V, TC = +150oC VR = 600V, TC = +150oC tRR IF = 1A, dIF/dt = 100A/s IF = 75A, dIF/dt = 100A/s tA tB QRR CJ RJC DEFINITIONS VF = Instantaneous forward voltage (pw = 300s, D = 2%). IR = Instantaneous reverse current. tRR = Reverse recovery time (See Figure 2), summation of tA + tB. tA = Time to reach peak reverse current (See Figure 2). tB = Time from peak IRM to projected zero crossing of IRM based on a straight line from peak IRM through 25% of IRM (See Figure 2). QRR = Reverse recovery charge. CJ = Junction Capacitance. RJC = Thermal resistance junction to case. EAVL = Controlled avalanche energy. (See Figures 10 and 11). pw = pulse width. D = duty cycle. V1 AMPLITUDE CONTROLS IF V2 AMPLITUDE CONTROLS dIF/dt R1 L1 = SELF INDUCTANCE OF R4 + LLOOP Q1 +V1 0 t2 t1 R2 Q4 t3 C1 0 -V2 R3 Q3 -V4 VRM R4 VR LLOOP DUT 0.25 IRM IRM +V3 Q2 t1 5t A(MAX) t2 > tRR t3 > 0 L1 tA(MIN) R4 10 0 RHRU7550 MAX 2.1 1.7 500 2.0 55 60 0.8 MIN TYP 35 18 90 200 MAX 2.1 1.7 500 2.0 55 60 0.8 MIN - RHRU7560 TYP 35 18 90 200 MAX 2.1 1.7 500 2.0 55 60 0.8 UNITS V V A A A mA mA mA ns ns ns ns nC pF oC/W MIN - TYP 35 18 90 200 - IF = 75A, dIF/dt = 100A/s IF = 75A, dIF/dt = 100A/s IF = 75A, dIF/dt = 100A/s VR = 10V, IF = 0A IF dIF dt tA tRR tB FIGURE 1. tRR TEST CIRCUIT FIGURE 2. tRR WAVEFORMS AND DEFINITIONS 2 RHRU7540, RHRU7550, RHRU7560 Typical Performance Curves 300 5000 +175oC 1000 IF, FORWARD CURRENT (A) 100 IR , REVERSE CURRENT (A) 100 +100oC 10 +100oC +175oC 10 +25oC 1 +25oC 0.1 0.01 1 0 0.5 1.0 1.5 2.0 VF, FORWARD VOLTAGE (V) 2.5 3.0 0 100 200 300 400 VR , REVERSE VOLTAGE (V) 500 600 FIGURE 3. TYPICAL FORWARD CURRENT vs FORWARD VOLTAGE DROP 60 50 t, RECOVERY TIMES (ns) 40 30 20 10 0 tA TC = +25oC FIGURE 4. TYPICAL REVERSE CURRENT vs REVERSE VOLTAGE 150 TC = +100oC t, RECOVERY TIMES (ns) tRR 125 tRR 100 75 50 tB 25 0 tA tB 1 10 IF, FORWARD CURRENT (A) 75 1 10 IF, FORWARD CURRENT (A) 75 FIGURE 5. TYPICAL tRR, tA AND tB CURVES vs FORWARD CURRENT AT +25oC 250 TC = +175oC FIGURE 6. TYPICAL tRR, tA AND tB CURVES vs FORWARD CURRENT AT +100oC IF(AV) , AVERAGE FORWARD CURRENT (A) 75 DC 60 SQ. WAVE 45 t, RECOVERY TIMES (ns) 200 150 tRR 100 tA 30 50 tB 15 0 1 10 IF, FORWARD CURRENT (A) 75 0 25 50 75 100 125 150 175 TC , CASE TEMPERATURE (oC) FIGURE 7. TYPICAL tRR, tA AND tB CURVES vs FORWARD CURRENT AT +175oC FIGURE 8. CURRENT DERATING CURVE FOR ALL TYPES 3 RHRU7540, RHRU7550, RHRU7560 Typical Performance Curves 600 CJ , JUNCTION CAPACITANCE (pF) (Continued) 500 400 300 200 100 0 0 50 100 150 200 VR , REVERSE VOLTAGE (V) FIGURE 9. TYPICAL JUNCTION CAPACITANCE vs REVERSE VOLTAGE Test Circuit and Waveforms IMAX = 1A L = 40mH R < 0.1 EAVL = 1/2LI2 [VAVL/(VAVL - VDD)] Q1 AND Q2 ARE 1000V MOSFETs Q1 L R + VDD 130 1M DUT VAVL 12V Q2 130 CURRENT SENSE IV VDD IL IL 12V t0 t1 t2 t FIGURE 10. AVALANCHE ENERGY TEST CIRCUIT FIGURE 11. AVALANCHE CURRENT AND VOLTAGE WAVEFORM All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification. Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. For information regarding Intersil Corporation and its products, see web site www.intersil.com Sales Office Headquarters NORTH AMERICA Intersil Corporation P. O. Box 883, Mail Stop 53-204 Melbourne, FL 32902 TEL: (321) 724-7000 FAX: (321) 724-7240 EUROPE Intersil SA Mercure Center 100, Rue de la Fusee 1130 Brussels, Belgium TEL: (32) 2.724.2111 FAX: (32) 2.724.22.05 ASIA Intersil (Taiwan) Ltd. 7F-6, No. 101 Fu Hsing North Road Taipei, Taiwan Republic of China TEL: (886) 2 2716 9310 FAX: (886) 2 2715 3029 4 |
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