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(R)
STT818B
HIGH GAIN LOW VOLTAGE PNP POWER TRANSISTOR
Type STT818B
s
Marking 818B
s s
s
VERY LOW COLLECTOR TO EMITTER SATURATION VOLTAGE DC CURRENT GAIN > 100 (hFE) 3 A CONTINUOUS COLLECTOR CURRENT (IC) SURFACE-MOUNTING SOT23-6L PACKAGE IN TAPE & REEL SOT23-6L (TSOP6)
APPLICATIONS POWER MANAGEMENT IN PORTABLE EQUIPMENTS s SWITCHING REGULATOR IN BATTERY CHARGER APPLICATIONS
s
DESCRIPTION The device is manufactured in low voltage PNP Planar Technology by using a "Base Island" layout. The resulting Transistor shows exceptional high gain performance coupled with very low saturation voltage.
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol V CBO V CEO V EBO IC I CM IB I BM P tot T stg Tj Parameter Collector-Base Voltage (I E = 0) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Collector Peak Current Base Current Base Peak Current Total Dissipation at T C = 25 o C Storage Temperature Max. Operating Junction Temperature Value -30 -30 -5 -3 -6 -0.2 -0.5 1.2 -65 to 150 150 Unit V V V A A A A W
o o
C C
July 2002
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STT818B
THERMAL DATA
R thj-amb (1) Thermal Resistance Junction-ambient
(1) Package mounted on FR4 pcb 25mm x 25mm.
Max
104.2
o
C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol I CBO I EBO Parameter Collector Cut-off Current (I E = 0) Emitter Cut-off Current (I C = 0) Test Conditions V CB = -30 V V CB = -30 V V EB = -5 V I C = -10 mA -30 T C = 125 o C Min. Typ. Max. -0.1 -20 -0.1 Unit A A A V
V (BR)CEO Collector-Emitter Breakdown Voltage (I B = 0) V CE(sat) Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Voltage DC Current Gain
I C = -0.5 A I C = -2 A I C = -1.2 A I C = -0.5 A I C = -1.2 A I C = -2 A I C = -0.5 A I C = -0.5 A I C = -2.5 A
I B = -5 mA I B = -20 mA I B = -20 mA I B = -5 mA I B = -20 mA I B = -20 mA V CE = -2 V V CE = -1 V V CE = -3 V 100 100
-0.075 -0.21 -0.74
-0.15 -0.5 -0.25 -1.1 -1.1 -1.2 -1.1
V V V V V V V
V BE(sat)
V BE(ON) h FE
-0.71
* Pulsed: Pulse duration = 300 s, duty cycle 1.5 %.
Safe Operating Area
Derating Curve
2/5
STT818B
DC Current Gain DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Switching Times Resistive Load
Switching Times Resistive Load
3/5
STT818B
SOT23-6L MECHANICAL DATA
mm MIN. A A1 A2 b C D E E1 L e e1 0.90 0.00 0.90 0.25 0.09 2.80 2.60 1.50 0.35 0.95 1.90 TYP. MAX. 1.45 0.15 1.30 0.50 0.20 3.10 3.00 1.75 0.55 MIN. 0.035 0.000 0.035 0.010 0.004 0.110 0.102 0.059 0.014 0.037 0.075 mils TYP. MAX. 0.057 0.006 0.051 0.020 0.008 0.122 0.118 0.069 0.022
DIM.
A A2 A1 b e1 e c L E
D
E1
4/5
STT818B
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics (c) 2002 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com
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