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| UMF9N 2 UMF9N UMT 2SC5585 2SK3019 ! ! (Units : mm) 1.25 2.1 ! ROHM : UMT6 EIAJ : SC-88 (3) (2) (1) Tr2 Tr1 (4) (5) (6) ! Type UMF9N UMT6 F9 TR 3000 0~0.1 ! 0.15 0.65 ! 1) 1 2) (4) 0.65 1.3 0.7 0.9 (3) 0.2 (6) 0.1Min. (1) 2.0 (5) (2) 1/5 UMF9N ! (Ta=25C) Tr1 Parameter Limits Symbol 15 VCBO VCEO 12 VEBO 6 IC 500 ICP 1.0 PC 150(TOTAL) Tj 150 Tstg -55~+150 Unit V V V mA A mW C C 1 2 1 Single pulse PW=1ms 2 1 120mW Tr2 Parameter Symbol Limits VDSS 30 VGSS 20 ID 100 200 IDP IDR 100 IDRP 200 150(TOTAL) PD Tch 150 Tstg -55~+150 Unit V V mA mA mA mA mW C C 1 1 2 1 PW10ms Duty cycle50% 2 1 120mW ! (Ta=25C) Tr1 Parameter Symbol BVCEO BVCBO BVEBO ICBO IEBO VCE(sat) hFE fT Cob Min. 12 15 6 - - - 270 - - Typ. - - - - - 100 - 320 7.5 Max. - - - 100 100 250 680 - - Unit V V V nA nA mV - MHz pF Conditions IC=1mA IC=10A IE=10A VCB=15V VEB=6V IC=200mA, IB=10mA VCE=2V, IC=10mA VCE=2V, IE=-10mA, f=100MHz VCB=10V, IE=0mA, f=1MHz Tr2 Parameter Symbol IGSS V(BR)DSS IDSS VGS(th) RDS(on) |Yfs| Ciss Coss Crss td(on) tr td(off) tf Min. - 30 - 0.8 - - 20 - - - - - - - Typ. - - - - 5 7 - 13 9 4 15 35 80 80 Max. 1 - 1.0 1.5 8 13 - - - - - - - - Unit A V A V ms pF pF pF ns ns ns ns Conditions VGS=20V, VDS=0V ID=10A, VGS=0V VDS=30V, VGS=0V VDS=3V, ID=100A ID=10mA, VGS=4V ID=1mA, VGS=2.5V VDS=3V, ID=10mA VDS=5V, VGS=0V, f=1MHz ID=10mA, VDD 5V, VGS=5V, RL=500, RGS=10 2/5 UMF9N ! Tr1 1000 COLLECTOR CURRENT : IC (mA) VCE=2V Pulsed DC CURRENT GAIN : hFE 1000 Ta=125C Ta=25C Ta=-40C COLLECTOR SATURATION VOLTAGE : VCE(sat) (mV) 1000 Ta=25C Pulsed VCE=2V Pulsed 100 100 100 Ta=12 5C Ta=25 C C 10 Ta= -40 IC/IB=50 10 10 IC/IB=20 IC/IB=10 1 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1 1 10 100 1000 1 1 10 100 1000 BASE TO EMITTER VOLTAGE : VBE (V) COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) Fig.1 Fig.2 Fig.3 () COLLECTOR SATURATION VOLTAGE : VCE (sat) (V) BASER SATURATION VOLTAGE : VBE (sat) (mV) 1000 IC/IB=20 Pulsed 10000 100 Ta=125C 25C -40C 10 1000 Ta=25C Ta=-40C TRANSITION FREQUENCY : fT (MHz) IC/IB=20 Pulsed 1000 VCE=2V Ta=25C Pulsed 100 Ta=125C 100 10 1 1 10 100 1000 10 1 10 100 1000 1 1 10 100 1000 COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) EMITTER CURRENT : IE (mA) Fig.4 ( ) Fig.5 Fig.6 EMITTER INPUT CAPACITANCE : Cib (pF) COLLECTOR OUTPUT CAPACITANCE : Cob (pF) 1000 TRANSITION FREQUENCY : IC (A) IE=0A f=1MHz Ta=25 100 Cib 10 Ta=25C Single Pulsed 1 10ms 100ms DC 1ms 0.1 10 Cob 0.01 1 0.1 1 10 100 0.001 0.01 0.1 1 10 100 EMITTER TO BASE VOLTAGE : VEB(V) EMITTER CURRENT : VCE (V) Fig.7 Fig.8 3/5 UMF9N Tr2 GATE THRESHOLD VOLTAGE : VGS(th) (V) 200m 100m DRAIN CURRENT : ID (A) STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) () VDS=3V Pulsed 2 50m 20m 10m 5m 2m 1m 0.5m VDS=3V ID=0.1mA Pulsed 50 VGS=4V Pulsed 20 10 5 1.5 Ta=125C 75C 25C -25C 1 Ta=125C 75C 25C -25C 2 1 0.5 0.001 0.002 0.5 0.2m 0.1m 0 1 2 3 4 0 -50 -25 0 25 50 75 100 125 150 0.005 0.01 0.02 0.05 0.1 0.2 0.5 GATE-SOURCE VOLTAGE : VGS (V) CHANNEL TEMPERATURE : Tch (C) DRAIN CURRENT : ID (A) Fig.9 Typical transfer characteristics Fig.10 Gate threshold voltage vs. channel temperature Fig.11 Static drain-source on-state resistance vs. drain current ( ) 50 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) () STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) () 20 10 5 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) () Ta=125C 75C 25C -25C VGS=2.5V Pulsed 15 Ta=25C Pulsed 9 8 7 6 5 4 3 2 1 0 -50 -25 0 25 50 75 ID=100mA VGS=4V Pulsed 10 ID=50mA 2 1 0.5 0.001 0.002 5 ID=0.1A ID=0.05A 0.005 0.01 0.02 0.05 0.1 0.2 0.5 0 0 5 10 15 20 100 125 150 DRAIN CURRENT : ID (A) GATE-SOURCE VOLTAGE : VGS (V) CHANNEL TEMPERATURE : Tch (C) Fig.12 Static drain-source on-state resistance vs. drain current ( ) Fig.13 Static drain-source on-state resistance vs. gate-source voltage Fig.14 Static drain-source on-state resistance vs. channel temperature 0.5 REVERSE DRAIN CURRENT : IDR (A) 0.2 FORWARD TRANSFER ADMITTANCE : |Yfs| (S) 100m 50m 20m 10m 5m 2m 1m 0.5m 0.2m 0.1m REVERSE DRAIN CURRENT : IDR (A) VDS=3V Pulsed 200m VGS=0V Pulsed 200m 100m 50m 20m 10m 5m 2m 1m 0.5m 0.2m 0.1m VGS=4V Ta=25C Pulsed 0.1 0.05 0.02 0.01 0.005 0.002 0.001 0.0001 0.0002 Ta=-25C 25C 75C 125C Ta=125C 75C 25C -25C 0V 0.0005 0.001 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 0 0.5 1 1.5 0 0.5 1 1.5 DRAIN CURRENT : ID (A) SOURCE-DRAIN VOLTAGE : VSD (V) SOURCE-DRAIN VOLTAGE : VSD (V) Fig.15 Forward transfer admittance vs. drain current Fig.16 Reverse drain current vs. source-drain voltage ( ) Fig.17 Reverse drain current vs. source-drain voltage ( ) 4/5 UMF9N 50 1000 tf 500 SWITHING TIME : t (ns) 20 CAPACITANCE : C (pF) Ta=25C f=1MHZ VGS=0V td(off) 200 100 50 20 10 5 2 0.1 0.2 tr td(on) Ta=25C VDD=5V VGS=5V RG=10 Pulsed 10 5 Ciss Coss Crss 2 1 0.5 0.1 0.2 0.5 1 2 5 10 20 50 0.5 1 2 5 10 20 50 100 DRAIN-SOURCE VOLTAGE : VDS (V) DRAIN CURRENT : ID (mA) Fig.18 Typical capacitance vs. drain-source voltage Fig.19 Switching characteristics 5/5 |
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