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| 2SK3662 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSII) 2SK3662 Switching Regulator, DC-DC Converter, Motor Drive Applications * * * * Low drain-source ON resistance: RDS (ON) = 9.4 m (typ.) High forward transfer admittance: |Yfs| = 55 S (typ.) Low leakage current: IDSS = 100 A (max) (VDS = 60 V) Enhancement-mode : Vth = 1.3 to 2.5 V (VDS = 10 V, ID = 1 mA) Unit: mm Maximum Ratings (Ta = 25C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kW) Gate-source voltage Drain current DC (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR (Note 3) Channel temperature Storage temperature range EAR Tch Tstg Rating 60 60 20 35 105 35 204 35 3.5 150 -55 to 150 Unit V V V A W mJ A mJ C C Pulse (Note 1) Drain power dissipation (Tc = 25C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy JEDEC JEITA TOSHIBA SC-67 2-10R1B Weight: 1.9 g (typ.) Thermal Characteristics Characteristics Thermal resistance, channel to case Thermal resistance, channel to ambient Symbol Rth (ch-c) Rth (ch-a) Max 3.57 62.5 Unit C/ W C/ W Note 1: Please use devices on condition that the channel temperature is below 150C. Note 2: VDD = 25 V, Tch = 25C (initial), L = 227 mH, IAR = 35 A, RG = 25 W Note 3: Repetitive rating: pulse width limited by maximum channel temperature This transistor is an electrostatic sensitive device. Please handle with caution. 1 2003-01-16 2SK3662 Electrical Characteristics (Ta = 25C) Characteristics Gate leakage current Drain cut-off current Drain-source breakdown voltage Gate threshold voltage Drain-source ON resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Turn-on time Switching time Fall time Turn-off time Total gate charge (gate-source plus gate-drain) Gate-source charge Gate-drain ("miller") charge tf toff Qg Qgs Qgd VDD 48 V, VGS = 10 V, ID = 35 A Symbol IGSS IDSS V (BR) DSS V (BR) DSX Vth RDS (ON) |Yfs| Ciss Crss Coss tr ton 10 V VGS 0V 4.7 ID = 18 A RL = 1.67 W VOUT VDS = 10 V, VGS = 0 V, f = 1 MHz Test Condition VGS = 16 V, VDS = 0 V VDS = 60 V, VGS = 0 V ID = 10 mA, VGS = 0 V ID = 10 mA, VGS = -20 V VDS = 10 V, ID = 1 mA VGS = 4 V, ID = 18 A VGS = 10 V, ID = 18 A VDS = 10 V, ID = 18 A Min 3/4 3/4 60 40 1.3 3/4 3/4 28 3/4 3/4 3/4 3/4 3/4 3/4 3/4 3/4 3/4 3/4 Typ. 3/4 3/4 3/4 3/4 3/4 12.5 9.4 55 5120 300 500 6 19 20 115 91 70 21 Max 10 100 3/4 3/4 2.5 19 12.5 3/4 3/4 3/4 3/4 3/4 3/4 ns 3/4 3/4 3/4 3/4 3/4 nC pF Unit mA mA V V mW S VDD 30 V Duty 1%, tw = 10 ms Source-Drain Diode Ratings and Characteristics (Ta = 25C) Characteristics Continuous drain reverse current (Note 1) Pulse drain reverse current Forward voltage (diode) Reverse recovery time Reverse recovery charge (Note 1) Symbol IDR IDRP VDS2F trr Qrr Test Condition 3/4 3/4 IDR1 = 35 A, VGS = 0 V IDR = 35 A, VGS = 0 V, dIDR/dt = 50 A/ms Min 3/4 3/4 3/4 3/4 3/4 Typ. 3/4 3/4 3/4 60 58 Max 35 105 -1.5 3/4 3/4 Unit A A V ns nC Marking K3662 Type Lot Number Month (starting from alphabet A) Year (last number of the christian era) 2 2003-01-16 2SK3662 ID - VDS 40 6 8 80 30 10 3.3 20 4 3.5 100 10 6 4.2 ID - VDS Common source Tc = 25C Pulse test 4 (A) (A) 3.8 60 3.6 40 3.4 20 VGS = 3 V 0 0 ID Drain current 10 VGS = 3 V Common source Tc = 25C Pulse test 0 0 Drain current ID 0.2 0.4 0.6 0.8 1.0 1 2 3 4 5 Drain-source voltage VDS (V) Drain-source voltage VDS (V) ID - VGS 100 Common source VDS = 10 V Pulse test 1.0 VDS - VGS Common source Tc = 25C Pulse test 80 (V) VDS Drain-source voltage 0.8 ID (A) 60 0.6 Drain current 40 0.4 ID = 35 A 20 Tc = -55C 0 0 1 2 3 100 25 4 5 0.2 17 9 0 0 4 8 12 16 20 Gate-source voltage VGS (V) Gate-source voltage VGS (V) iYfsi - ID 300 RDS (ON) - ID 50 (S) Common source 100 Tc = -55C Drain-source on resistance RDS (ON) (mW) iYfsi VDS = 10 V Pulse test Common source 30 Tc = 25C Pulse test 4 10 VGS = 10 V 5 3 Forward transfer admittance 50 100 30 25 10 5 1 3 5 10 30 50 100 1 1 3 5 10 30 50 100 Drain current ID (A) Drain current ID (A) 3 2003-01-16 2SK3662 RDS (ON) - Tc (mW) 25 Common source 20 Pulse test 17 A, 9 A 100 IDR - VDS RDS (ON) (A) 10 Drain-source on resistance 15 ID = 35 A VGS = 4 V Drain reverse current IDR 5 10 3 10 VGS = 10 V ID = 35 A, 17 A, 9 A 5 Common source VGS = 0 V Tc = 25C Pulse test -0.8 -1.0 -1.2 -1.4 -1.6 0 -80 -40 0 40 80 120 160 1 0 -0.2 -0.4 -0.6 Case temperature Tc (C) Drain-source voltage VDS (V) Capacitance - VDS 10000 5 Common source Ciss VDS = 10 V ID = 1 mA Pulse test Vth - Tc Gate threshold voltage Vth (V) 4 (pF) 1000 3 Capacitance C Coss 2 100 Common source VGS = 0 V f = 1 MHz 10 0.1 Ta = 25C 1 10 Crss 1 0 -80 100 -40 0 40 80 120 160 Case temperature Tc (C) Drain-source voltage VDS (V) PD - Tc 40 Common source VDS = 10 A ID = 1 mA Pulse test 80 Dynamic input/output characteristics Common source ID = 35 A Tc = 25C Pulse test 16 (W) (V) PD VDS Drain power dissipation Drain-source voltage 24 8 VDD = 48 V 20 40 10 20 VGS 4 0 0 40 80 120 160 0 0 40 80 120 0 160 Case temperature Tc (C) Total gate charge Qg (nC) 4 2003-01-16 Gate-source voltage VDS 12 VGS 30 60 12 (V) 2SK3662 rth - tw 3 Normalized transient thermal impedance rth (t)/Rth (ch-c) 1 Duty = 0.5 0.3 0.2 0.1 0.1 0.05 0.02 0.01 0.01 Single pulse T Duty = t/T Rth (ch-c) = 3.57C/W 100 m 1m 10 m 100 m 1 10 PDM t 0.03 0.00 10 m Pulse width tw (S) Safe operating area 300 ID max (pulsed)* t = 1 ms* ID max (continuous) 30 250 EAS - Tch (mJ) Avalanche energy EAS 100 200 (A) 150 ID 10 t = 10 ms* Drain current 100 3 50 1 * Single nonrepetitive pulse 0.3 Tc = 25C Curves must be derated linearly with increase in temperature. 0.1 0.1 1 VDSS max 10 100 0 25 50 75 100 125 150 Channel temperature (initial) Tch (C) Drain-source voltage VDS (V) 15 V -15 V BVDSS IAR VDD VDS Waveform AS = ae o 1 B VDSS / x L x I2 x c cB 2 - VDD / e VDSS o Test circuit RG = 25 W VDD = 25 V, L = 227 mH 5 2003-01-16 2SK3662 RESTRICTIONS ON PRODUCT USE 000707EAA * TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc.. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer's own risk. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. * The information contained herein is subject to change without notice. 6 2003-01-16 |
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