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Ordering number :EN5960 NPN Triple Diffused Planar Silicon Transistor TS7990 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features * High speed. * High breakdown voltage (VCBO=1600V). * High reliability (Adoption of HVP process). * Adoption of MBIT process. Package Dimensions unit:mm 2039D-TO3PML [TS7990] o3.4 16.0 5.6 3.1 5.0 8.0 21.0 22.0 4.0 2.8 2.0 2.0 20.4 1.0 0.6 1 2 3 5.45 5.45 1:Base 2:Collector 3:Emitter SANYO:TO-3PML Specifications Absolute Maximum Ratings at Ta = 25C Parameter Colletctor-to-Base Voltage Colletctor-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tc=25 C Tj Tstg Conditions Ratings 1600 800 6 15 35 3.0 75 150 -55 to +150 Unit V V V A A W W C C Electrical Characteristics at Ta = 25C Parameter Collector Cutoff Current Collector Sustain Voltage Emitter Cutoff Current Collector Cutoff Current DC Current Gain C-E Saturation Voltage B-E Saturation Voltage Storage Time Fall Time Symbol ICES VCE=1600V, RBE=0 VCEO(SUS) IC=100mA, IB=0 IEBO VEB=4V, IC=0 ICBO hFE(1) hFE(2) VCE(sat) VBE(sat) tstg tf VCB=800V, IE=0 VCE=5V, IC=1.0A VCE=5V, IC=11A IC=11A, IB=2.75A IC=11A, IB=2.75A IC=9A, IB1=1.5A, IB2=-3.75A IC=9A, IB1=1.5A, IB2=-3.75A 15 4 Conditions Ratings min 800 1.0 10 30 7 5 1.5 3.0 0.2 V V s s typ max 1.0 Unit mA V mA A SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 42498TS (KOTO) TA-1621 No.5960-1/3 3.5 2.0 TS7990 Switching Time Test Circuit PW=20s DC1% INPUT RB VR 50 + 100F + 470F RL=22.2 IB1 IB2 OUTPUT VBE=-2V VCC=200V 14 12 I C - VCE 16 14 I C - VBE VCE =5V Collerctor Current, IC - A Collerctor Current, IC - A 10 8 6 4 1.4A 1.2A 1.0A 12 10 8 0.8A 0.6A 0.4A 20 4 2 2 IB = 0 0 0 1 2 3 4 5 6 7 8 9 10 0 0 0.2 0.4 0.6 Ta= 1 25C 0.2A 0.8 -40 C 1.0 6 C 1.2 Collector-to-Emitter Voltage, VCE - V 100 7 5 Base-to-Emitter Voltage, VBE - V 10 I / I =5 7CB 5 hFE - I C VCE = 5V VCE(sat) - I C Collector-to-Emitter Saturation Voltage, VCE(sat) - V 5 7 1.0 2 3 5 7 2 Ta=120C DC Current Gain, hFE 3 2 10 7 5 3 2 1.0 0.1 3 2 1.0 7 5 3 2 0.1 Ta=-40C 7 5 120C 25C 3 2 0.01 0.1 2 3 5 7 1.0 2 3 5 7 10 2 25C -40C 2 3 10 Collector Current, IC - A 7 5 Collector Current, IC - A 10 7 SW Time - I C t stg SW Time - I B2 t stg VCC = 200V IC =9A IB1 =1.5A R load Switching Time, SW Time - s Switching Time, SW Time - s 3 2 5 3 2 1.0 7 5 3 2 0.1 7 7 1.0 7 5 3 2 tf tf VCC =200V 0.1 IC / IB1=6 IB2/ IB1=2.5 7 R load 5 7 0.1 2 3 5 7 1.0 2 3 57 10 2 3 0.1 2 3 5 7 1.0 2 3 5 7 10 Collector Current, IC - A Base Current, IB2 - A No.5960-2/3 TS7990 7 5 I CP 3 2 IC Forward Bias A S O 10 s 0 5 3 2 Reverse Bias A S O Collector Current, IC - A 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 Tc = 25C 3 1pulse 2 23 5 7 10 Collector Current, IC - A 30 PC =7 5W 10 7 5 3 2 1.0 7 5 s 0 1m s m 10 s DC op er at io n L =500H IB2 = -3A 2 Tc = 25C 1pulse 0.1 3 10 2 3 5 7 100 2 3 2 3 5 7 100 2 3 5 7 1000 Collector-to-Emitter Voltage, VCE - V 4.0 Collector-to-Emitter Voltage, VCE - V 80 75 P C - Ta Collector Dissipation, PC - W P C - Tc Collector Dissipation, PC - W 3.0 60 No 2.0 he at sin 40 k 1.0 20 0 0 20 40 60 80 100 120 140 160 0 0 20 40 60 80 100 120 140 160 Ambient Temperature, Ta - C Case Temperature, Tc - C No products described or contained herein are intended for use in surgical implants, life-support systems, aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and the like, the failure of which may directly or indirectly cause injury, death or property loss. Anyone purchasing any products described or contained herein for an above-mentioned use shall: Accept full responsibility and indemnify and defend SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors and all their officers and employees, jointly and severally, against any and all claims and litigation and all damages, cost and expenses associated with such use: Not impose any responsibilty for any fault or negligence which may be cited in any such claim or litigation on SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors or any of their officers and employees jointly or severally. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of April, 1998. Specifications and information herein are subject to change without notice. PS No.5960-3/3 |
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