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PRELIMINARY DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SJ601
SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE
DESCRIPTION
The 2SJ601 is P-channel MOS Field Effect Transistor designed for solenoid, motor and lamp driver.
ORDERING INFORMATION
PART NUMBER 2SJ601 2SJ601-Z PACKAGE TO-251 TO-252
FEATURES
* Low on-state resistance: RDS(on)1 = 31 m MAX. (VGS = -10 V, ID = -18 A) RDS(on)2 = 46 m MAX. (VGS = -4.0 V, ID = -18 A) * Low Ciss: Ciss = 3300 pF TYP. * Built-in gate protection diode * TO-251/TO-252 package (TO-251)
ABSOLUTE MAXIMUM RATINGS (TA = 25C)
Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VGS = 0 V) Drain Current (DC) (TC = 25C) Drain Current (pulse)
Note1
VDSS VGSS ID(DC) ID(pulse) PT PT Tch Tstg
-60
V V A A W W C C A mJ (TO-252)
m 20 m 36 m 120
65 1.0 150 -55 to +150 -35 123
Total Power Dissipation (TC = 25C) Total Power Dissipation (TA = 25C) Channel Temperature Storage Temperature Single Avalanche Current Single Avalanche Energy
Note2 Note2
IAS EAS
Notes 1. PW 10 s, Duty cycle 1% 2. Starting Tch = 25C, RG = 25 , VGS = -20 V 0 V
The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for availability and additional information.
Document No. D14646EJ1V0DS00 (1st edition) Date Published November 2000 NS CP(K) Printed in Japan
(c)
2000
2SJ601
ELECTRICAL CHARACTERISTICS (TA = 25C)
Characteristics Zero Gate Voltage Drain Current Gate Leakage Current Gate Cut-off Voltage Forward Transfer Admittance Drain to Source On-state Resistance Symbol IDSS IGSS VGS(off) | yfs | RDS(on)1 RDS(on)2 Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Body Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD VF(S-D) trr Qrr VDD= -48 V VGS = -10 V ID = -36 A IF = -36 A, VGS = 0 V IF = -36 A, VGS = 0 V di/dt = -100 A / s Test Conditions VDS = -60 V, VGS = 0 V VGS = MIN. TYP. MAX. -10 Unit
A A
V S
m 20 V, VDS = 0 V
1.5 15 2.0 30 25 32 3300 580 230 11 12 80 53 63 10 16 1.0 52 108
m 10
2.5
VDS = -10 V, ID = -1 mA VDS = -10 V, ID = -18 A VGS = -10 V, ID = -18 A VGS = -4.0 V, ID = -18 A VDS = -10 V VGS = 0 V f = 1 MHz VDD = -30 V, ID = -18 A VGS(on) = -10 V RG = 0
31 46
m m pF pF pF ns ns ns ns nC nC nC V ns nC
TEST CIRCUIT 1 AVALANCHE CAPABILITY
D.U.T. RG = 25 PG VGS = -20 V 0 V - ID VDD BVDSS VDS 50 L VDD
TEST CIRCUIT 2 SWITCHING TIME
D.U.T. RL PG. RG VDD VDS (-)
90% 90% 10% 10%
VGS (-) VGS
Wave Form
0
10%
VGS(on)
90%
IAS
VGS (-) 0 = 1 s Duty Cycle 1%
VDS VDS
Wave Form
0
td(on) ton
tr
td(off) toff
tf
Starting Tch
TEST CIRCUIT 3 GATE CHARGE
D.U.T. IG = -2 mA 50 RL VDD
PG.
2
Preliminary Data Sheet D14646EJ1V0DS
2SJ601
PACKAGE DRAWINGS (Unit : mm)
1) TO-251 (MP-3) 2) TO-252 (MP-3Z)
1.5-0.1
+0.2
6.50.2 5.00.2 4
2.30.2 0.50.1
0.8 4.3 MAX.
6.50.2 5.00.2 4
1.5-0.1
+0.2
2.30.2 0.50.1
1.60.2
5.50.2
1
2
3
13.7 MIN.
7.0 MAX.
1
2
3
1.10.2
+0.2
0.5-0.1
2.3 2.3
0.5-0.1
1.Gate 2.Drain 3.Source 4.Fin (Drain)
+0.2
0.9 0.8 2.3 2.3 MAX. MAX. 0.8 1. Gate 2. Drain 3. Source 4. Fin (Drain)
EQUIVALENT CIRCUIT
Drain
0.75
Gate
Body Diode
Gate Protection Diode
Source
Remark
The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device.
0.7
1.10.2
2.0 MIN.
5.50.2 10.0 MAX.
1.0 MIN. 1.8 TYP.
Preliminary Data Sheet D14646EJ1V0DS
3

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