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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SJ607
SWITCHING P-CHANNEL POWER MOS FET
DESCRIPTION
The 2SJ607 is P-channel MOS Field Effect Transistor designed for high current switching applications.
ORDERING INFORMATION
PART NUMBER 2SJ607 2SJ607-S 2SJ607-ZJ 2SJ607-Z PACKAGE TO-220AB TO-262 TO-263 TO-220SMD
Note
FEATURES
* Super low on-state resistance: RDS(on)1 = 11 m MAX. (VGS = -10 V, ID = -42 A) RDS(on)2 = 16 m MAX. (VGS = -4.0 V, ID = -42 A) * Low input capacitance: Ciss = 7500 pF TYP. (VDS = -10 V, VGS = 0 V) * Built-in gate protection diode
Note TO-220SMD package is produced only in Japan
(TO-220AB)
ABSOLUTE MAXIMUM RATINGS (TA = 25C)
Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TC = 25C) Drain Current (pulse)
Note1
VDSS VGSS ID(DC) ID(pulse) PT PT Tch Tstg
-60
V V A A W W C C A mJ (TO-262)
m 20 m 83 m 332
160 1.5 150 -55 to +150 -50 250
Total Power Dissipation (TC = 25C) Total Power Dissipation (TA = 25C) Channel Temperature Storage Temperature Single Avalanche Current Single Avalanche Energy
Note2 Note2
IAS EAS
Notes 1. PW 10 s, Duty cycle 1% 2. Starting Tch = 25C, VDD = -30 V, RG = 25 , VGS = -20 0 V (TO-263, TO-220SMD)
The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for availability and additional information.
Document No. D14655EJ3V0DS00 (3rd edition) Date Published July 2002 NS CP(K) Printed in Japan
The mark 5 shows major revised points.
(c)
2000, 2001
2SJ607
ELECTRICAL CHARACTERISTICS (TA = 25C)
CHARACTERISTICS Zero Gate Voltage Drain Current Gate Leakage Current Gate Cut-off Voltage Forward Transfer Admittance Drain to Source On-state Resistance SYMBOL IDSS IGSS VGS(off) | yfs | RDS(on)1 RDS(on)2 Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Body Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD VF(S-D) trr Qrr VDD= -48 V VGS = -10 V ID = -83 A IF = 83 A, VGS = 0 V IF = 83 A, VGS = 0 V di/dt = 100 A/ s TEST CONDITIONS VDS = -60 V, VGS = 0 V VGS = MIN. TYP. MAX. -10 UNIT
A A
V S
m 20 V, VDS = 0 V
-1.5 45 -2.0 90 9.1 11 7500 1800 430 23 16 340 160 188 30 48 1.0 64 150
m 10
-2.5
VDS = -10 V, ID = -1 mA VDS = -10 V, ID = -42 A VGS = -10 V, ID = -42 A VGS = -4.0 V, ID = -42 A VDS = -10 V VGS = 0 V f = 1 MHz VDD = -30 V, ID = -42 A VGS = -10 V RG = 0
11 16
m m pF pF pF ns ns ns ns nC nC nC V ns nC
TEST CIRCUIT 1 AVALANCHE CAPABILITY
D.U.T. RG = 25 PG. VGS = -20 0 V - ID VDD BVDSS VDS 50 L VDD
TEST CIRCUIT 2 SWITCHING TIME
D.U.T. RL PG. RG VDD VDS (-)
90% 90% 10% 10%
VGS (-) VGS
Wave Form
0
10%
VGS
90%
IAS
VGS (-) 0 = 1 s Duty Cycle 1%
VDS VDS
Wave Form
0
td(on) ton
tr
td(off) toff
tf
Starting Tch
TEST CIRCUIT 3 GATE CHARGE
D.U.T. IG = -2 mA 50 RL VDD
PG.
2
Data Sheet D14655EJ3V0DS
2SJ607
TYPICAL CHARACTERISTICS (TA = 25C)
DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 200
TOTAL POWER DISSIPATION vs. CASE TEMPERATURE
dT - Percentage of Rated Power - %
100 80 60 40 20 0
PT - Total Power Dissipation - W
0 20 40 60 80 100 120 140 160
160
120
80
40
0
0
20
40
60
80
100
120 140
160
Tch - Channel Temperature - C
TC - Case Temperature - C
FORWARD BIAS SAFE OPERATING AREA -1000 ID(pulse)
PW = 10
ID - Drain Current - A
10
0
-100
R
( DS on )
Lim
ite
d
ID(DC)
Po m s Lim we DC ite r Di d ss ipa tio n
10
1
s
s
m
s
-10
-1 -0.1
TC = 25C Single Pulse -1 -10 -100
VDS - Drain to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 1000
rth(t) - Transient Thermal Resistance - C/W
100
Rth(ch-A) = 83.3C/W
10
1
Rth(ch-C) = 0.78C/W
0.1 Single Pulse 0.01 10 100 1m 10 m 100 m 1 10 100 1000
PW - Pulse Width - s
Data Sheet D14655EJ3V0DS
3
2SJ607
FORWARD TRANSFER CHARACTERISTICS -1000 -300 -240
DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE
ID - Drain Current - A
ID - Drain Current - A
-100
VGS = -10 V
-180 -120 -60
-10
-4.5 V -4.0 V
-1
TA = -55C 25C 75C 125C VDS = -10 V Pulsed -5 -4
-0.1 -1
-2
-3
0
Pulsed 0 -1 -2 -3 -4 -5
VGS - Gate to Source Voltage - V
VDS - Drain to Source Voltage - V
| yfs | - Forward Transfer Admittance - S
1000
100
RDS(on) - Drain to Source On-state Resistance - m
FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT
DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 30 Pulsed
20 ID = -83 A -42 A -17 A 10
10 TA = 125C 75C 25C -55C VDS = -10 V Pulsed -0.1 -1 -10 -100 ID - Drain Current - A
1
0.1 -0.01
0
0
-2
-4
-6
-8
-10
VGS - Gate to Source Voltage - V
RDS(on) - Drain to Source On-state Resistance - m
DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 20 Pulsed -4.0
GATE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE VDS = -10 V ID = -1 mA
16 VGS = -4.0 V -4.5 V -10 V
VGS(off) - Gate Cut-off Voltage - V
-100 -1000
-3.0
12
-2.0
8
4
-1.0
0 -1
-10
0
-50
0
50
100
150
ID - Drain Current - A
Tch - Channel Temperature - C
4
Data Sheet D14655EJ3V0DS
2SJ607
RDS(on) - Drain to Source On-state Resistance - m
DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 20 Pulsed 16 VGS = -4.0 V -4.5 V -10 V
SOURCE TO DRAIN DIODE FORWARD VOLTAGE -1000 Pulsed
ISD - Diode Forward Current - A
-100
VGS = -10 V -4.0 V 0V
12
-10
8
4 ID = -42 A -50 0 50 100 150 Tch - Channel Temperature - C
-1
0
-0.1
0
-0.5
-1.0
-1.5
-2.0
VSD - Source to Drain Voltage - V
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 100000
SWITCHING CHARACTERISTICS 1000
td(on), tr, td(off), tf - Switching Time - ns
VGS = 0 V f = 1 MHz
td(off)
Ciss, Coss, Crss - Capacitance - pF
10000
Ciss
100 td(on) 10 tr
tf
1000
Coss Crss
100 -0.1
-1
-10
-100
1 -0.1
VDD = -30 V VGS = -10 V RG = 0 -1 -10 -100 ID - Drain Current - A
VDS - Drain to Source Voltage - V
DYNAMIC INPUT/OUTPUT CHARACTERISTICS -12 -60 ID = -83 A -50 -40 -30 -20 -10 0 0 VDD = -48 V -30 V -12 V VGS -10 -8 -6 -4 -2 0 200
-1000
SINGLE AVALANCHE CURRENT vs. INDUCTIVE LOAD
IAS - Single Avalanche Current - A
VDS - Drain to Source Voltage - V
VGS - Gate to Source Voltage - V
-100
IAS = -50 A
EAS
-10 VDD = -30 V RG = 25 VGS = -20 0 V 100
=2
50
mJ
VDS
40 80 120 160
-1 10
1m
10 m
QG - Gate Charge - nC
L - Inductive Load - H
Data Sheet D14655EJ3V0DS
5
2SJ607
SINGLE AVALANCHE ENERGY DERATING FACTOR 160 VDD = -30 V RG = 25 VGS = -20 0 V IAS -50 A
Energy Derating Factor - %
140 120 100 80 60 40 20 0 25 50 75 100
125
150
Starting Tch - Starting Channel Temperature - C
6
Data Sheet D14655EJ3V0DS
2SJ607
5 PACKAGE DRAWINGS (Unit: mm) 1) TO-220AB (MP-25)
3.00.3
10.6 MAX. 10.0 TYP. 4.8 MAX.
2) TO-262 (MP-25 Fin Cut)
1.00.5
3.60.2
5.9 MIN.
4.8 MAX. 1.30.2
1.30.2
10 TYP.
15.5 MAX.
4 1
2 3
4 123
6.0 MAX.
1.30.2
1.30.2
12.7 MIN.
12.7 MIN.
8.50.2
0.750.1 2.54 TYP.
0.50.2 2.54 TYP.
1.Gate 2.Drain 3.Source 4.Fin (Drain)
2.80.2
0.750.3 2.54 TYP.
0.50.2
2.54 TYP.
2.80.2
1.Gate 2.Drain 3.Source 4.Fin (Drain)
3) TO-263 (MP-25ZJ)
10 TYP. 4 4.8 MAX. 1.30.2
4) TO-220SMD (MP-25Z)
10 TYP. 4
Note
4.8 MAX. 1.30.2
1.00.5
8.50.2
1.00.5
1 1.40.2 0.70.2 2.54 TYP.
2
3
1
TY P.
T . YP
2
3
1.10.4
5.70.4
3.00.5
8.50.2
1.40.2 0.50.2 0.750.3 2.54 TYP.
0
.5R
2.54 TYP.
0.8
R
.8 2.54 TYP. 0
0
.5R
TY
R
P. P. TY
0.50.2
2.80.2
Note This package is produced only in Japan.
EQUIVALENT CIRCUIT
Drain
Gate
Body Diode
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device.
Gate Protection Diode
Source
2.80.2
1.Gate 2.Drain 3.Source 4.Fin (Drain)
1.Gate 2.Drain 3.Source 4.Fin (Drain)
Data Sheet D14655EJ3V0DS
7

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