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| DSEC 29-02A DSEC 29-02AS HiPerFREDTM Epitaxial Diode with common cathode and soft recovery IFAV = 2x15 A VRRM = 200 V trr = 25 ns TO-220 AC A C A VRSM V 200 200 VRRM V 200 200 Type DSEC 29-02A DSEC 29-02AS C (TAB) TO-263 A A C (TAB) A = Anode, C = Cathode, TAB = Cathode Symbol IFRMS IFAVM IFSM EAS IAR TVJ TVJM Tstg Ptot Md Weight Conditions TC = 150C; rectangular, d = 0.5 TVJ = 45C; tp = 10 ms (50 Hz), sine TVJ = 25C; non-repetitive IAS = 2.5 A; L = 180 H VA = 1.5*VR typ.; f = 10 kHz; repetitive Maximum Ratings 35 15 140 0.8 0.3 -55...+175 175 -55...+150 A A A mJ A C C C W Nm lb.in. g Features * * * * * * * International standard package Planar passivated chips Very short recovery time Extremely low switching losses Low IRM-values Soft recovery behaviour Epoxy meets UL 94V-0 Applications * Antiparallel diode for high frequency switching devices * Antisaturation diode * Snubber diode * Free wheeling diode in converters and motor control circuits * Rectifiers in switch mode power supplies (SMPS) * Inductive heating * Uninterruptible power supplies (UPS) * Ultrasonic cleaners and welders Advantages * Avalanche voltage rated for reliable operation * Soft reverse recovery for low EMI/RFI * Low IRM reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch TC = 25C mounting torque typical 95 0.45...0.55 4...5 2/4 Symbol IR Conditions TVJ = 25C; VR = VRRM TVJ = 150C; VR = VRRM IF = 15 A; TVJ = 150C TVJ = 25C Characteristic Values typ. max. 100 0.5 0.86 1.06 1.6 0.5 A mA V V K/W K/W ns 4.4 A VF RthJC RthCH trr IRM IF = 1 A; -di/dt = 100 A/s; VR = 30 V; TVJ = 25C VR = 100 V; IF = 25 A; -diF/dt = 100 A/s TVJ = 100C 25 3.5 Dimensions see Outlines.pdf Pulse test: Pulse Width = 5 ms, Duty Cycle < 2.0 % Pulse Width = 300 s, Duty Cycle < 2.0 % Data according to IEC 60747 and per diode unless otherwise specified. IXYS reserves the right to change limits, test conditions and dimensions. (c) 2004 IXYS All rights reserved 1-2 432 DSEC 29-02A DSEC 29-02AS 50 A 40 IF 30 TVJ = 150C TVJ = 100C TVJ = 25C 20 Qr 500 IF = 30 A 400 300 200 10 100 0 0.0 0 100 5 0 A/s 1000 -diF/dt 0 200 400 600 A/s 1000 800 -diF/dt IF = 15 A IF = 7.5 A IRM 20 15 10 700 nC 600 30 TVJ = 100C VR = 100 V A 25 TVJ = 100C VR = 100 V IF = 30 A IF = 15 A IF = 7.5 A 0.4 0.8 1.2 V VF 1.6 Fig. 1 Forward current IF versus VF 1.4 Fig. 2 Typ. reverse recovery charge Qr 80 ns TVJ = 100C VR = 100 V IF = 30 A 60 IF = 15 A IF = 7.5 A 20 50 V 30 VFR 40 Fig. 3 Typ. peak reverse current IRM 0.40 s 0.35 tfr 0.30 0.25 0.20 TVJ = 100C IF = 15 A 10 0.15 0.10 0.05 tfr VFR 1.2 Kf 1.0 IRM 0.8 trr 70 40 Qr 0 40 80 TVJ 120 C 160 0.6 30 0 200 400 600 A/s 800 -diF/dt 1000 0 0 200 400 0.00 600 A/s 1000 800 diF/dt Fig. 4 Typ. dynamic parameters Qr, IRM 10 K/W 1 ZthJC 0.1 Fig. 5 Typ. recovery time trr versus -diF/dt Fig. 6 Typ. peak forward voltage VFR and tfr Constants for ZthJC calculation: 0.01 i 1 2 4 Rthi (K/W) 0.851 0.328 0.421 ti (s) 0.0052 0.0003 0.0409 0.001 0.00001 DSEC 29-02A 0.0001 0.001 0.01 0.1 t s 1 Fig. 7 Transient thermal resistance junction to case 432 IXYS reserves the right to change limits, test conditions and dimensions. (c) 2004 IXYS All rights reserved 2-2 |
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