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PD - 95842
IRF6612/IRF6612TR1
VDSS
l
HEXFET(R) Power MOSFET
RDS(on) max
3.3m@VGS = 10V 4.4m@VGS = 4.5V
Qg(typ.)
30nC
Application Specific MOSFETs l Ideal for CPU Core DC-DC Converters l Low Conduction Losses l Low Switching Losses l Low Profile (<0.7 mm) l Dual Sided Cooling Compatible l Compatible with existing Surface Mount Techniques
30V
MX
Applicable DirectFET Package/Layout Pad (see p.8,9 for details)
SQ SX ST MQ MX MT
DirectFET ISOMETRIC
Description
The IRF6612 combines the latest HEXFET(R) Power MOSFET Silicon technology with the advanced DirectFET TM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, IMPROVING previous best thermal resistance by 80%. The IRF6612 balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors operating at higher frequencies. The IRF6612 has been optimized for parameters that are critical in synchronous buck converters including Rds(on), gate charge and Cdv/dt-induced turn on immunity to minimize losses in the synchronous FET socket.
Absolute Maximum Ratings
Parameter
VDS VGS ID @ TC = 25C ID @ TA = 25C ID @ TA = 70C IDM PD @TA = 25C PD @TA = 70C PD @TC = 25C TJ TSTG Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Power Dissipation Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range
Max.
30 20 136 24 19 190 2.8 1.8 89 0.022 -40 to + 150
Units
V
A
g g
c
W W/C C
Thermal Resistance
Parameter
Junction-to-Ambient Junction-to-Ambient Junction-to-Ambient Junction-to-Case Junction-to-PCB Mounted
RJA RJA RJA RJC RJ-PCB
fj gj hj ij
Typ.
--- 12.5 20 --- 1.0
Max.
45 --- --- 1.4 ---
Units
C/W
Notes through are on page 10
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1
02/02/04
IRF6612/IRF6612TR1
Static @ TJ = 25C (unless otherwise specified)
Parameter
BVDSS VDSS/TJ RDS(on) VGS(th) VGS(th)/TJ IDSS IGSS gfs Qg Qgs1 Qgs2 Qgd Qgodr Qsw Qoss td(on) tr td(off) tf Ciss Coss Crss Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Gate Threshold Voltage Coefficient Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Forward Transconductance Total Gate Charge Pre-Vth Gate-to-Source Charge Post-Vth Gate-to-Source Charge Gate-to-Drain Charge Gate Charge Overdrive Switch Charge (Qgs2 + Qgd) Output Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance
Min. Typ. Max. Units
30 --- --- --- 1.35 --- --- --- --- --- 96 --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- 24 2.5 3.4 --- -5.6 --- --- --- --- --- 30 8.5 2.9 10 8.6 13 18 15 52 21 4.8 3970 780 360 --- --- 3.3 4.4 2.25 --- 1.0 100 100 -100 --- 45 --- --- --- --- --- --- --- --- --- --- --- --- --- pF nC nC V
Conditions
VGS = 0V, ID = 250A
mV/C Reference to 25C, ID = 1mA m VGS = 10V, ID = 24A V VGS = 4.5V, ID = 19A VDS = VGS, ID = 250A
e e
mV/C A VDS = 24V, VGS = 0V VDS = 24V, VGS = 0V, TJ = 125C nA VGS = 20V S VGS = -20V VDS = 15V, ID = 19A VDS = 15V VGS = 4.5V ID = 19A
VDS = 16V, VGS = 0V VDD = 16V, VGS = 4.5VAe ID = 19A Clamped Inductive Load VGS = 0V VDS = 15V = 1.0MHz
ns
Avalanche Characteristics
Parameter EAS IAR Single Pulse Avalanche Energyd Avalanche CurrentA Typ. --- --- Max. 37 19 Units mJ A
Diode Characteristics
Parameter
IS ISM VSD trr Qrr Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode)A Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge
Min. Typ. Max. Units
--- --- --- --- --- --- --- --- 19 8.1 24 A 190 1.0 29 12 V ns nC
Conditions
MOSFET symbol showing the integral reverse p-n junction diode. TJ = 25C, IF = 19A di/dt = 100A/s
G D
TJ = 25C, IS = 19A, VGS = 0V
e
S
e
2
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IRF6612/IRF6612TR1
10000
TOP VGS 10V 7.0V 4.5V 4.0V 3.5V 3.2V 2.9V 2.7V
1000
TOP VGS 10V 7.0V 4.5V 4.0V 3.5V 3.2V 2.9V 2.7V
ID, Drain-to-Source Current (A)
1000
BOTTOM
ID, Drain-to-Source Current (A)
100
BOTTOM
100
2.7V 10
10 2.7V
60s PULSE WIDTH
Tj = 25C 1 0.1 1 V DS, Drain-to-Source Voltage (V) 10 1 0.1
60s PULSE WIDTH
Tj = 150C 1 V DS, Drain-to-Source Voltage (V) 10
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000
1.5
RDS(on) , Drain-to-Source On Resistance (Normalized)
ID, Drain-to-Source Current ()
VDS = 10V 60s PULSE WIDTH 100
ID = 25A VGS = 10V
10 TJ = 150C 1
T J = 25C
1.0
0.1 0 1 2 3 4 5
0.5 -60 -40 -20 0 20 40 60 80 100 120 140 160
VGS, Gate-to-Source Voltage (V)
T J , Junction Temperature (C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance vs. Temperature
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IRF6612/IRF6612TR1
100000 VGS = 0V, f = 1 MHZ C iss = C gs + C gd, C ds SHORTED
6.0 ID= 19A
VGS, Gate-to-Source Voltage (V)
C rss = C gd C oss = C ds + C gd
5.0
VDS= 24V VDS= 15V
C, Capacitance(pF)
10000
4.0
Ciss Coss Crss
3.0
1000
2.0
1.0
100 1 10 100
0.0 0 10 20 30 40
VDS, Drain-to-Source Voltage (V)
QG Total Gate Charge (nC)
Fig 5. Typical Capacitance vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage
1000.00
1000 OPERATION IN THIS AREA LIMITED BY R DS(on)
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
100
100.00
T J = 150C
10
100sec 1msec
10.00
T J = 25C
1 T A = 25C Tj = 150C Single Pulse 0.1 0 1 10
10msec
VGS = 0V 1.00 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 VSD, Source-to-Drain Voltage (V)
100
1000
VDS, Drain-to-Source Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
4
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IRF6612/IRF6612TR1
140 120
ID, Drain Current (A)
VGS(th) Gate threshold Voltage (V)
2.5
2.0
100 80 60 40 20 0 25 50 75 100 125 150 T C , Case Temperature (C)
ID = 250A
1.5
1.0
0.5
0.0 -75 -50 -25 0 25 50 75 100 125 150
T J , Temperature ( C )
Fig 9. Maximum Drain Current vs. Case Temperature
Fig 10. Threshold Voltage vs. Temperature
100
D = 0.50
Thermal Response ( Z thJA )
10
0.20 0.10 0.05 0.02 0.01
J J 1 1 R1 R1 2 R2 R2 R3 R3 3 R4 R4 C 2 3 4 4
1
Ri (C/W)
1.2801 8.7256 21.750 13.251
i (sec)
0.000322 0.164798 2.25760 69
0.1
0.01
SINGLE PULSE ( THERMAL RESPONSE )
Ci= i/Ri Ci i/Ri
Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthja + Tc
0.001 0.01 0.1 1 10 100
0.001 1E-006 1E-005 0.0001
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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IRF6612/IRF6612TR1
RDS(on), Drain-to -Source On Resistance (m )
10
150
EAS , Single Pulse Avalanche Energy (mJ)
9 8 7 6 5 4 3 2 1 0 2 3 4 5 6 7
ID = 24A
125
ID TOP 5.3A 6.2A BOTTOM 19A
100
T J = 125C
75
50
T J = 25C
25
0
8
9
10
25
50
75
100
125
150
VGS, Gate -to -Source Voltage (V)
Starting T J , Junction Temperature (C)
Fig 12. On-Resistance vs. Gate Voltage
Fig 13. Maximum Avalanche Energy vs. Drain Current
Current Regulator Same Type as D.U.T.
V(BR)DSS
15V
tp
12V .2F
DRIVER
50K .3F
VDS
L
D.U.T.
RG
20V VGS
+ V - DS
D.U.T
IAS tp
+ - VDD
A
VGS
0.01
I AS
3mA
Fig 14. Unclamped Inductive Test Circuit and Waveform
LD VDS
IG
ID
Current Sampling Resistors
Fig 15. Gate Charge Test Circuit
VDS
+
V DD D.U.T
90%
10%
VGS Pulse Width < 1s Duty Factor < 0.1%
VGS
td(on) tr td(off) tf
Fig 16. Switching Time Test Circuit
Fig 17. Switching Time Waveforms
6
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IRF6612/IRF6612TR1
D.U.T
Driver Gate Drive
+
P.W.
Period
D=
P.W. Period VGS=10V
+
Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer
*
D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt
-
-
+
RG
* * * * dv/dt controlled by RG Driver same type as D.U.T. I SD controlled by Duty Factor "D" D.U.T. - Device Under Test
V DD
VDD
+ -
Re-Applied Voltage Inductor Curent
Body Diode
Forward Drop
Ripple 5%
ISD
* VGS = 5V for Logic Level Devices Fig 15. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET(R) Power MOSFETs
Id Vds Vgs
Vgs(th)
Qgs1 Qgs2
Qgd
Qgodr
Fig 16. Gate Charge Waveform
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IRF6612/IRF6612TR1
DirectFET Outline Dimension, MX Outline (Medium Size Can, X-Designation).
Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET. This includes all recommendations for stencil and substrate designs.
DIMENSIONS
METRIC MAX CODE MIN 6.35 A 6.25 5.05 B 4.80 3.95 C 3.85 0.45 D 0.35 0.72 E 0.68 0.72 F 0.68 1.42 G 1.38 0.84 H 0.80 0.42 J 0.38 K 0.88 1.01 2.41 L 2.28 0.70 M 0.59 0.08 N 0.03 IMPERIAL MIN 0.246 0.189 0.152 0.014 0.027 0.027 0.054 0.032 0.015 0.035 0.090 0.023 0.001 MAX 0.250 0.201 0.156 0.018 0.028 0.028 0.056 0.033 0.017 0.039 0.095 0.028 0.003
Note: Controlling dimensions are in mm
8
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IRF6612/IRF6612TR1
DirectFET Board Footprint, MX Outline (Medium Size Can, X-Designation).
Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET. This includes all recommendations for stencil and substrate designs.
DirectFET Tape & Reel Dimension (Showing component orientation).
NOTE: Controlling dimensions in mm Std reel quantity is 4800 parts. (ordered as IRF6618). For 1000 parts on 7" reel, order IRF6618TR1 REEL DIMENSIONS TR1 OPTION (QTY 1000) STANDARD OPTION (QTY 4800) METRIC METRIC IMPERIAL IMPERIAL MIN MIN MAX MIN MAX MIN CODE MAX MAX 12.992 A 6.9 N.C 177.77 N.C N.C 330.0 N.C 0.795 B 0.75 19.06 N.C 20.2 N.C N.C N.C 0.504 C 0.53 0.50 13.5 0.520 12.8 12.8 13.2 0.059 D 0.059 1.5 N.C 1.5 N.C N.C N.C 3.937 E 2.31 58.72 N.C 100.0 N.C N.C N.C N.C F N.C N.C 0.724 N.C 0.53 13.50 18.4 G 0.488 0.47 11.9 0.567 12.4 N.C 12.01 14.4 H 0.469 0.47 11.9 0.606 11.9 12.01 15.4 N.C
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IRF6612/IRF6612TR1
DirectFET Part Marking
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. Starting TJ = 25C, L = 0.20mH, RG = 25, IAS = 19A. Pulse width 400s; duty cycle 2%. Surface mounted on 1 in. square Cu board.
Used double sided cooling , mounting pad. Mounted on minimum footprint full size board with metalized
back and with small clip heatsink.
TC measured with thermal couple mounted to top (Drain) of
part.
R is measured at TJ of approximately 90C.
Data and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualification Standards can be found on IRs Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.02/04
10
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