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| Transistors MSG36E41 SiGe HBT type For low-noise RF amplifier Features * Compatible between high breakdown voltage and high cut-off frequency * Low noise, high-gain amplification * Two elements incorporated into one package (Each transistor is separated) * Reduction of the mounting area and assembly cost by one half 0.12+0.03 -0.02 6 5 4 Unit: mm 0.800.05 1.000.04 0 to 0.02 * MSG33004 + MSG33001 (0.35) (0.35) 1.000.05 Absolute Maximum Ratings Ta = 25C Parameter Tr1 Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Tr2 Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Overall Total power dissipation * Junction temperature Storage temperature Note) *: Symbol VCBO VCEO VEBO IC VCBO VCEO VEBO IC PT Tj Tstg Rating 9 6 1 100 9 6 1 30 125 125 -55 to +125 Unit V V V mA V V V Display at No.1 lead 0.10 Basic Part Number 1 2 3 0.10 1: Base (Tr1) 2: Emitter (Tr1) 3: Base (Tr2) 0.37+0.03 -0.02 4: Collector (Tr2) 5: Emitter (Tr2) 6: Collector (Tr1) SSSMini6-F1 Package Marking Symbol: 6D Internal Connection 6 Tr1 5 4 Tr2 mA mW C C 1 2 3 Copper plate at the collector is 5.0 cm2 on substrate at 10 mm x 12 mm x 0.8 mm. Electrical Characteristics Ta = 25C 3C * Tr1 Parameter Collector-base cutoff current (Emitter open) Collector-emitter cutoff current (Base open) Emitter-base cutoff current (Collector open) Forward current transfer ratio Transition frequency * Forward transfer gain * Noise figure * Collector output capacitance (Common base, input open circuited) * Symbol ICBO ICEO IEBO hFE fT S21e2 NF Cob Conditions VCB = 9 V, IE = 0 VCE = 6 V, IB = 0 VEB = 1 V, IC = 0 VCE = 3 V, IC = 15 mA VCE = 3 V, IC = 30 mA, f = 2 GHz VCE = 3 V, IC = 30 mA, f = 2 GHz VCE = 3 V, IC = 15 mA, f = 2 GHz VCB = 3 V, IE = 0, f = 1 MHz 6.0 100 17 9.0 1.4 0.6 2.0 0.9 Min Typ Max 1 1 1 220 Unit A A A GHz dB dB pF Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. Observe precautions for handling. Electrostatic sensitive devices. 3. *: Verified by random sampling Publication date: November 2004 SJC00319BED (0.10) 1 MSG36E41 Electrical Characteristics (continued) Ta = 25C 3C * Tr2 Parameter Collector-base cutoff current (Emitter open) Collector-emitter cutoff current (Base open) Emitter-base cutoff current (Collector open) Forward current transfer ratio Transition frequency * Forward transfer gain * Noise figure * Collector output capacitance (Common base, input open circuited) * Symbol ICBO ICEO IEBO hFE fT S21e2 NF Cob Conditions VCB = 9 V, IE = 0 VCE = 6 V, IB = 0 VEB = 1 V, IC = 0 VCE = 3 V, IC = 3 mA VCE = 3 V, IC = 10 mA, f = 2 GHz VCE = 3 V, IC = 10 mA, f = 2 GHz VCE = 3 V, IC = 3 mA, f = 2 GHz VCB = 3 V, IE = 0, f = 1 MHz 9.0 100 19 11.0 1.4 0.3 2.0 0.6 Min Typ Max 1 1 1 220 Unit A A A GHz dB dB pF Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. Observe precautions for handling. Electrostatic sensitive devices. 3. *: Verified by random sampling Common characteristics chart PC Ta 120 Collector power dissipation PC (mW) 100 80 60 40 20 0 0 40 80 120 Ambient temperature Ta (C) 2 SJC00319BED MSG36E41 Characteristics charts of Tr1 IC VCE 14 IB = 10 A step 80 A 70 A 60 A 8 50 A 6 4 2 0 40 A 30 A 20 A 10 A 0 1 2 3 4 5 6 12 180 VCE = 3 V 160 hFE IC 25 VCE = 3 V f = 2 GHz fT I C Forward current transfer ratio hFE Collector current IC (mA) 140 120 100 80 60 40 20 0 10 Transition frequency fT (GHz) 0 0 1 10 100 20 15 10 5 0 1 10 100 Collector-emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) Cob VCB Collector output capacitance C (pF) (Common base, input open circuited) ob 1 f = 1 MHz Ta = 25C 15 GP IC VCE = 3 V f = 2 GHz 14 12 S21e2 IC VCE = 3 V f = 2 GHz 10 Forward transfer gain S21e (dB) 2 Power gain GP (dB) 10 8 6 5 0 4 2 0 -5 0.1 0 2 4 6 8 10 12 -10 0.1 1 10 100 1 10 100 Collector-base voltage VCB (V) Collector current IC (mA) Collector current IC (mA) NF IC 7 6 VCE = 3 V f = 2 GHz S11 , S22 1.0 0.5 2.0 VCE = 3 V IC = 30 mA Noise figure NF (dB) 5 4 S11 0 0.3 S22 1.0 3.0 3 2 1 - 0.5 0 0.1 1 10 100 -2.0 -1.0 Collector current IC (mA) SJC00319BED 3 MSG36E41 S21e2 , S12e2 f 50 40 Forward transfer gain S21e , 2 Reverse transfer gain S12e (dB) 30 20 10 0 S21e 2 2 -10 -20 -30 -40 -50 0 0.5 1.0 1.5 2.0 2.5 3.0 S12e 2 Frequency f (GHz) 4 SJC00319BED MSG36E41 Characteristics charts of Tr2 IC VCE 14 12 IB = 10 A step 180 VCE = 3 V 80 A 70 A 10 8 60 A 50 A 40 A 30 A 4 2 0 20 A 10 A 160 hFE IC 25 VCE = 3 V f = 2 GHz fT I C Forward current transfer ratio hFE Collector current IC (mA) 140 120 100 80 60 40 20 0 0.01 Transition frequency fT (GHz) 0.1 1 10 100 20 15 6 10 5 0 1 2 3 4 5 6 0 1 10 100 Collector-emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) Cob VCB Collector output capacitance C (pF) (Common base, input open circuited) ob 0.8 0.7 10 0.6 0.5 0.4 0.3 0.2 0.1 -10 0.1 f = 1 MHz 15 GP IC VCE = 3 V f = 2 GHz 14 12 S21e2 IC VCE = 3 V f = 2 GHz Forward transfer gain S21e (dB) 2 Power gain GP (dB) 10 8 6 5 0 4 2 0 -5 0 1 2 3 4 5 6 1 10 100 1 10 100 Collector-base voltage VCB (V) Collector current IC (mA) Collector current IC (mA) NF IC 7 6 VCE = 3 V f = 2 GHz S11 , S22 1.0 0.5 2.0 VCE = 3 V IC = 10 mA Noise figure NF (dB) 5 4 0 3 0.3 S11 1.0 3.0 2 S22 1 - 0.5 0 0.1 1 10 100 -2.0 -1.0 Collector current IC (mA) SJC00319BED 5 MSG36E41 S21e2 , S12e2 f 50 40 Forward transfer gain S21e , 2 Reverse transfer gain S12e (dB) 30 20 10 0 S21e 2 2 -10 -20 -30 -40 -50 0 0.5 1.0 1.5 2.0 2.5 3.0 S12e 2 Frequency f (GHz) 6 SJC00319BED |
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