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RFP22N10, RF1S22N10SM Data Sheet July 1999 File Number 2385.3 22A, 100V, 0.080 Ohm, N-Channel Power MOSFETs These N-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers, and relay drivers. These transistors can be operated directly from integrated circuits. Formerly developmental type TA9845. Features * 22A, 100V * rDS(ON) = 0.080 * UIS SOA Rating Curve (Single Pulse) * SOA is Power Dissipation Limited * Nanosecond Switching Speeds * Linear Transfer Characteristics * High Input Impedance * 175oC Operating Temperature * Related Literature - TB334 "Guidelines for Soldering Surface Mount Components to PC Boards" Ordering Information PART NUMBER RFP22N10 RF1S22N10SM PACKAGE TO-220AB TO-263AB BRAND RFP22N10 F1S22N10 Symbol D NOTE: When ordering use the entire part number. Add the suffix, 9A, to obtain the TO-263AB variant in tape and reel, e.g. RF1S22N10SM9A. G S Packaging JEDEC TO-220AB SOURCE DRAIN GATE GATE SOURCE JEDEC TO-263AB DRAIN (FLANGE) DRAIN (FLANGE) 4-499 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures. http://www.intersil.com or 407-727-9207 | Copyright (c) Intersil Corporation 1999 RFP22N10, RF1S22N10SM Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified RFP22N10, RF1S22N10SMS Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS Drain to Gate Voltage (RGS = 1M) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDGR Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ , TSTG Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .Tpkg 100 100 20 22 50 100 0.67 -55 to 175 300 260 UNITS V V V A A W W/oC oC oC oC CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: 1. TJ = 25oC to 150oC. Electrical Specifications PARAMETER TC = 25oC, Unless Otherwise Specified SYMBOL BVDSS VGS(TH) IDSS TEST CONDITIONS ID = 250A, VGS = 0 (Figure 7) VGS = VDS, ID = 250A (Figure 9) VDS = 80V, VGS = 0V VDS = 80V, VGS = 0V, TC = 150oC MIN 100 2 VGS = 0V to 20V VGS = 0V to 10V VGS = 0V to 2V VDD = 80V, ID 22A, RL = 3.64 Ig(REF) = 1mA (Figure 11) TO-220 and TO-263 TYP 13 24 65 18 MAX 4 1 50 100 0.080 60 120 150 75 3.5 1.5 62 UNITS V V A A nA ns ns ns ns ns ns nC nC nC oC/W oC/W Drain to Source Breakdown Voltage Gate to Source Threshold Voltage Zero-Gate Voltage Drain Current Gate to Source Leakage Current Drain to Source On Resistance (Note 2) Turn-On Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-Off Time Total Gate Charge Gate Charge at 10V Threshold Gate Charge Thermal Resistance Junction to Case Thermal Resistance Junction to Ambient IGSS rDS(ON) t(ON) td(ON) tr td(OFF) tf t(OFF) QG(TOT) QG(10) QG(TH) RJC RJA VGS = 20V, VDS = 0 ID = 22A, VGS = 10V (Figure 8) VDD = 50Vwwwwwwwww, ID = 11A, RL = 4.5, VGS = 10V, RGS = 25 (Figure 11) Source to Drain Diode Specifications PARAMETER Source to Drain Diode Voltage (Note 2) Diode Reverse Recovery Time NOTE: 2. Pulse Test: Pulse Duration = 300s maximum, duty cycle = 2%. SYMBOL VSD trr ISD = 22A ISD = 22A, dISD/dt = 100A/s TEST CONDITIONS MIN TYP MAX 1.5 200 UNITS V ns 4-500 RFP22N10, RF1S22N10SM Typical Performance Curves 1.2 POWER DISSIPATION MULTIPLIER 1.0 0.8 0.6 0.4 0.2 0 0 25 125 50 75 100 TC , CASE TEMPERATURE (oC) 150 175 ID, DRAIN CURRENT (A) Unless otherwise Specified 25 20 15 10 5 0 25 50 75 100 125 150 175 TC, CASE TEMPERATURE (oC) FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE TEMPERATURE FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs CASE TEMPERATURE 100 ID MAX (CONTINUOUS) ID , DRAIN CURRENT (A) 10 OPERATION IN THIS AREA MAY BE LIMITED BY rDS(ON) 1 DC OPERATION IAS, AVALANCHE CURRENT (A) TJ = MAX RATED SINGLE PULSE TC = 25oC 100 VGS = 20V STARTING TJ = 25oC 10 STARTING TJ = 150oC If R = 0 tAV = (L)(IAS)/(1.3 RATED BVDSS - VDD) If R 0 tAV = (L/R)ln[(IAS R)/(1.3 RATED BVDSS - VDD) + 1] 0.1 1 tAV, TIME IN AVALANCHE (ms) 10 VDSS(MAX) = 100V 0.1 1 10 VDS , DRAIN TO SOURCE VOLTAGE (V) 100 1 0.01 FIGURE 3. FORWARD BIAS SAFE OPERATING AREA FIGURE 4. UNCLAMPED INDUCTIVE SWITCHING CAPABILITY 50 VGS = 10V ID , DRAIN CURRENT (A) 40 VGS = 8V 30 VGS = 6V VGS = 7V ID , DRAIN CURRENT (A) 50 PULSE DURATION = 80s VDS = 15V DUTY CYCLE = 0.5% MAX. TC = -55oC 30 TC = 175oC TC = 25oC 40 20 PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX TC = 25oC VGS = 5V 20 10 VGS = 4V 0 10 0 0 2 4 6 8 VDS , DRAIN TO SOURCE VOLTAGE (V) 10 0 2 4 6 8 VGS , GATE TO SOURCE VOLTAGE (V) 10 FIGURE 5. SATURATION CHARACTERISTICS FIGURE 6. TRANSER CHARACTERISTICS 4-501 RFP22N10, RF1S22N10SM Typical Performance Curves 2.0 NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE NORMALIZED DRAIN TO SOURCE ON RESISTANCE ID = 250A Unless otherwise Specified (Continued) 3.0 2.5 ID = 22A, VGS = 10V PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX 1.5 2.0 1.5 1.0 0.5 0 -50 1.0 0.5 0 -50 100 50 150 0 TJ , JUNCTION TEMPERATURE (oC) 200 0 50 100 150 200 TJ , JUNCTION TEMPERATURE (oC) FIGURE 7. NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE vs JUNCTION TEMPERATURE FIGURE 8. NORMALIZED DRAIN TO SOURCE ON RESISTANCE vs JUNCTION TEMPERATURE 1.50 VGS = VDS , ID = 250A NORMALIZED GATE THRESHOLD VOLTAGE 1.25 1.00 0.75 0.50 0.25 0 -50 C, CAPACITANCE (pF) 2500 VGS = 0V, f = 1MHz CISS = CGS + CGD CRSS = CGD COSS CDS + CGS 2000 1500 CISS 1000 500 CRSS 0 50 100 150 200 0 0 5 10 15 20 TJ , JUNCTION TEMPERATURE (oC) COSS 25 VDS , DRAIN TO SOURCE VOLTAGE (V) FIGURE 9. NORMALIZED GATE THRESHOLD VOLTAGE vs JUNCTION TEMPERATURE FIGURE 10. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE VDS, DRAIN TO SOURCE VOLTAGE (V) 100 10 VGS, GATE TO SOURCE VOLTAGE (V) GATE TO SOURCE VOLTAGE RL = 4.55 IG(REF) = 1mA VGS = 10V 75 7.5 VDD = VDSS VDD = VDSS 50 0.75VDSS 0.50VDSS 0.25VDSS 0.75VDSS 0.50VDSS 0.25VDSS 5 25 2.5 DRAIN TO SOURCE VOLTAGE 0 20 IG(REF) IG(ACT) t, TIME (s) 80 IG(REF) IG(ACT) 0 NOTE: Refer to Intersil Application Notes AN7254 and AN7260. FIGURE 11. NORMALIZED SWITCHING WAVEFORMS FOR CONSTANT GATE CURRENT 4-502 RFP22N10, RF1S22N10SM S Test Circuits and Waveforms VDS BVDSS L VARY tP TO OBTAIN REQUIRED PEAK IAS VGS DUT tP RG IAS + tP VDS VDD - VDD 0V IAS 0.01 0 tAV FIGURE 12. UNCLAMPED ENERGY TEST CIRCUIT FIGURE 13. UNCLAMPED ENERGY WAVEFORMS tON td(ON) VDS VDS VGS RL + tOFF td(OFF) tr tf 90% 90% DUT RGS VGS - VDD 0 10% 90% 10% VGS 0 10% 50% PULSE WIDTH 50% FIGURE 14. SWITCHING TIME TEST CIRCUIT FIGURE 15. RESISTIVE SWITCHING WAVEFORMS VDS RL VDD Qg(TOT) Qgd Qgs VGS VGS + VDD DUT IG(REF) IG(REF) 0 0 VDS FIGURE 16. GATE CHARGE TEST CIRCUIT FIGURE 17. GATE CHARGE WAVEFORMS 4-503 RFP22N10, RF1S22N10SM All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification. Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. For information regarding Intersil Corporation and its products, see web site http://www.intersil.com Sales Office Headquarters NORTH AMERICA Intersil Corporation P. O. Box 883, Mail Stop 53-204 Melbourne, FL 32902 TEL: (407) 724-7000 FAX: (407) 724-7240 EUROPE Intersil SA Mercure Center 100, Rue de la Fusee 1130 Brussels, Belgium TEL: (32) 2.724.2111 FAX: (32) 2.724.22.05 ASIA Intersil (Taiwan) Ltd. 7F-6, No. 101 Fu Hsing North Road Taipei, Taiwan Republic of China TEL: (886) 2 2716 9310 FAX: (886) 2 2715 3029 4-504 |
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