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| SUP/SUB85N10-10 New Product Vishay Siliconix N-Channel 100-V (D-S) 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) 100 rDS(on) (W) 0.0105 @ VGS = 10 V 0.012 @ VGS = 4.5 V ID (A) 85 a TO-220AB D TO-263 G DRAIN connected to TAB G GDS Top View SUP85N10-10 DS S N-Channel MOSFET Top View SUB85N10-10 ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 175_C) 175 C) Pulsed Drain Current Avalanche Current Repetitive Avalanche Energyb Maximum Power Dissipationb L = 0.1 mH TC = 25_C (TO-220AB and TO-263) TA = 25_C (TO-263)d TC = 25_C TC = 125_C Symbol VDS VGS ID IDM IAR EAR PD TJ, Tstg Limit 100 "20 85a 60a 240 75 280 250c 3.75 -55 to 175 Unit V A mJ W _C Operating Junction and Storage Temperature Range THERMAL RESISTANCE RATINGS Parameter PCB Mount (TO-263)d Junction-to-Ambient Free Air (TO-220AB) Junction-to-Case Notes a. Package limited. b. Duty cycle v 1%. c. See SOA curve for voltage derating. d. When mounted on 1" square PCB (FR-4 material). Document Number: 71141 S-00172--Rev. A, 14-Feb-00 www.vishay.com S FaxBack 408-970-5600 RthJA RthJC Symbol Limit 40 62.5 0.6 Unit _C/W 2-1 SUP/SUB85N10-10 Vishay Siliconix New Product SPECIFICATIONS (TJ =25_C UNLESS OTHERWISE NOTED) Parameter Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage V(BR)DSS VGS(th) IGSS VDS = 0 V, ID = 250 mA VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "20 V VDS = 80 V, VGS = 0 V Zero Gate Voltage Drain Current Z G Vl DiC IDSS VDS = 80 V, VGS = 0 V, TJ = 125_C VDS = 80 V, VGS = 0 V, TJ = 175_C On-State Drain Currenta ID(on) VDS w 5 V, VGS = 10 V VGS = 10 V, ID = 30 A DiS OS Ri Drain-Source On-State Resistancea rDS(on) VGS = 4.5 V, ID = 20 A VGS = 10 V, ID = 30 A, TJ = 125_C VGS = 10 V, ID = 30 A, TJ = 175_C Forward Transconductancea gfs VDS = 15 V, ID = 30 A 25 120 0.0085 0.0010 0.0105 0.012 0.017 0.022 S W 100 V 1 3 "100 1 50 250 A mA A nA Symbol Test Condition Min Typ Max Unit Dynamicb Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Chargec Gate-Source Chargec Gate-Drain Chargec Turn-On Delay Timec Rise Timec Turn-Off Delay Timec Fall Timec Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf VDD = 50 V, RL = 0 6 W V, 0.6 ID ^ 85 A, VGEN = 10 V RG = 2 5 W A V, 2.5 VDS = 50 V, VGS = 10 V ID = 85 A V V, VGS = 0 V, VDS = 25 V, f = 1 MHz 6550 665 265 105 17 23 12 90 55 130 25 135 ns 85 195 160 nC C pF F Source-Drain Diode Ratings and Characteristics (TC = 25_C)b Continuous Current Pulsed Current Forward Voltagea Reverse Recovery Time Peak Reverse Recovery Current Reverse Recovery Charge IS ISM VSD trr IRM(REC) Qrr A, di/dt A/ms IF = 50 A di/d = 100 A/ IF = 85 A, VGS = 0 V 1.0 85 4.5 0.17 85 A 240 1.5 140 7 0.35 V ns A mC Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. www.vishay.com S FaxBack 408-970-5600 2-2 Document Number: 71141 S-00172--Rev. A, 14-Feb-00 SUP/SUB85N10-10 New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 250 VGS = 10 thru 6 V 200 I D - Drain Current (A) 5V I D - Drain Current (A) 150 200 Vishay Siliconix Transfer Characteristics 150 100 100 50 4V 50 TC = 125_C 25_C 3V 0 0 2 4 6 8 10 0 0 1 2 3 4 -55_C 5 6 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Transconductance 250 TC = -55_C r DS(on) - On-Resistance ( W ) 200 g fs - Transconductance (S) 25_C 150 125_C 100 0.015 0.020 On-Resistance vs. Drain Current VGS = 4.5 V 0.010 VGS = 10 V 0.005 50 0 0 20 40 60 80 100 0 0 20 40 60 80 100 120 ID - Drain Current (A) ID - Drain Current (A) Capacitance 10000 20 Gate Charge 8000 C - Capacitance (pF) Ciss 6000 V GS - Gate-to-Source Voltage (V) 16 VDS = 50 V ID = 85 A 12 4000 8 2000 Crss 4 Coss 0 0 15 30 45 60 75 0 0 50 100 150 200 VDS - Drain-to-Source Voltage (V) Document Number: 71141 S-00172--Rev. A, 14-Feb-00 Qg - Total Gate Charge (nC) www.vishay.com S FaxBack 408-970-5600 2-3 SUP/SUB85N10-10 Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Junction Temperature 2.5 VGS = 10 V ID = 30 A r DS(on) - On-Resistance (W) (Normalized) 2.0 I S - Source Current (A) 100 Source-Drain Diode Forward Voltage 1.5 TJ = 150_C 10 TJ = 25_C 1.0 0.5 0 -50 1 -25 0 25 50 75 100 125 150 175 0 0.3 0.6 0.9 1.2 TJ - Junction Temperature (_C) VSD - Source-to-Drain Voltage (V) Avalanche Current vs. Time 1000 140 Drain Source Breakdown vs. Junction Temperature 130 100 IAV (A) @ TA = 25_C I Dav (a) 10 IAV (A) @ TA = 150_C 1 V (BR)DSS (V) 120 ID = 250 mA 110 100 0.1 0.00001 0.0001 0.001 0.01 0.1 1 90 -50 -25 0 25 50 75 100 125 150 175 tin (Sec) TJ - Junction Temperature (_C) www.vishay.com S FaxBack 408-970-5600 2-4 Document Number: 71141 S-00172--Rev. A, 14-Feb-00 SUP/SUB85N10-10 New Product THERMAL RATINGS Maximum Avalanche and Drain Current vs. Case Temperature 100 1000 Vishay Siliconix Safe Operating Area 80 100 I D - Drain Current (A) I D - Drain Current (A) 10 ms 100 ms 10 Limited by rDS(on) 60 1 ms 10 ms 100 ms dc 40 20 1 TC = 25_C Single Pulse 0 0 25 50 75 100 125 150 175 0.1 0.1 1 10 100 1000 TC - Ambient Temperature (_C) VDS - Drain-to-Source Voltage (V) Normalized Thermal Transient Impedance, Junction-to-Case 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 1 10 Square Wave Pulse Duration (sec) Document Number: 71141 S-00172--Rev. A, 14-Feb-00 www.vishay.com S FaxBack 408-970-5600 2-5 |
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