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| LAB MECHANICAL DATA Dimensions in mm (inches) SEME 2N2222ACSM HIGH SPEED, MEDIUM POWER, NPN SWITCHING TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS FEATURES 0.51 0.10 (0.02 0.004) 0.31 rad. (0.012) * SILICON PLANAR EPITAXIAL NPN TRANSISTOR * HERMETIC CERAMIC SURFACE MOUNT PACKAGE (SOT23 COMPATIBLE) * CECC SCREENING OPTIONS A 1.40 (0.055) max. 2.54 0.13 (0.10 0.005) 3 2 1 0.76 0.15 (0.03 0.006) 1.91 0.10 (0.075 0.004) 3.05 0.13 (0.12 0.005) A= * SPACE QUALITY LEVELS OPTIONS * HIGH SPEED SATURATED SWITCHING 0.31 rad. (0.012) 1.02 0.10 (0.04 0.004) APPLICATIONS: SOT23 CERAMIC (LCC1 PACKAGE) Underside View PAD 2 - Emitter PAD 3 - Collector Hermetically sealed surface mount version of the popular 2N2222A for high reliability / space applications requiring small size and low weight devices. PAD 1 - Base ABSOLUTE MAXIMUM RATINGS (Tcase = 25C unless otherwise stated) VCBO VCEO VEBO IC PD PD Rja Tstg,Tj Semelab plc. Collector - Base Voltage Collector - Emitter Voltage (IB = 0) Emitter - Base Voltage (IB = 0) Collector Current Total Device Dissipation Derate above 50C Thermal Resistance Junction to Ambient Storage Temperature,Operating Temp Range Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk 75V 40V 6V 600mA 350mW 2.0mW / C 350C/W -55 to 200C Prelim. 3/00 LAB ELECTRICAL CHARACTERISTICS (Tcase = 25C unless otherwise stated) Parameter VCEO(sus)* V(BR)CBO* V(BR)EBO* ICEX* ICBO* IEBO* IBL* VCE(sat)* VBE(sat)* Collector - Emitter Sustaining Voltage Collector - Base Breakdown Voltage Emitter - Base Breakdown Voltage Collector Cut-off Current (IC = 0) Collector - Base Cut-off Current Emitter Cut-off Current (IC = 0) Base Current Collector - Emitter Saturation Voltage Base - Emitter Saturation Voltage SEME 2N2222ACSM Test Conditions IC = 10mA IC = 10mA IE = 10mA IB = 0 IE = 0 TC = 125C IC = 0 VCE = 60V IC = 150mA IC = 500mA IC = 150mA IC = 500mA IC = 0.1mA IC = 1mA VEB = 3V (off) VEB = 3V (off) IB = 15mA IB = 50mA IB = 15mA IC = 50mA VCE = 10V VCE = 10V VCE = 10V VCE = 10V VCE = 10V VCE = 1V VCE = 10V IC = 0 VCE = 60V VCB = 60V Min. 40 75 6 Typ. Max. Unit V V V 10 10 10 10 20 0.3 1 nA nA mA nA nA V V 0.6 35 50 75 35 100 50 40 1.2 2 hFE* DC Current Gain IC = 10mA TA = -55C IC = 10mA IC = 150mA IC = 150mA IC = 500mA -- 300 * Pulse test tp = 300ms , d 2% DYNAMIC CHARACTERISTICS (Tcase = 25C unless otherwise stated) Parameter fT Cob Cib hfe Transition Frequency Output Capacitance Input Capacitance Small Signal Current Gain Test Conditions IC = 20mA VCB = 10V VBE = 0.5V IC = 1mA IC = 10mA VCE = 20V IE = 0 IC = 0 VCE = 10V VCE = 10V f = 100MHz f = 1.0MHz f = 1.0MHz f = 1kHz f = 1kHz Min. 300 Typ. Max. Unit MHz 8 30 pF pF 50 75 300 375 SWITCHING CHARACTERISTICS (RESISTIVE LOAD) (Tcase = 25C unless otherwise stated) Parameter td tr ts tf Delay Time Rise Time Storage Time Fall Time Test Conditions VCC = 30V IC1 = 150mA VCC = 30V VBE = 0.5V (off) IB1 = 15mA IC = 150mA IB1 = IB2 = 15mA Min. Typ. Max. Unit 10 25 225 60 ns ns ns ns fT is defined as the frequency at which hFE extrapolates to unity. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk Prelim. 3/00 |
Price & Availability of 2N2222ACSM
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