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| DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK1958 N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING The 2SK1958 is an N-channel vertical MOS FET. Because it can be driven by a voltage as low as 1.5 V and it is not necessary to consider a drive current, this FET is ideal as an actuator for low-current portable systems such as headphone stereos and video cameras. PACKAGE DIMENSIONS (in mm) 2.1 0.1 1.25 0.1 2.0 0.2 +0.1 0.3 -0 0.65 0.65 FEATURES * Gate can be driven by 1.5 V * Because of its high input impedance, there's no need to consider drive current components required can be reduced * Since bias resistance can be omitted, the number of G S +0.1 +0.1 0.3 Marking 0.15 -0.05 0.9 0.1 0 to 0.1 Marking: G21 EQUIVALENT CURCUIT Drain (D) Gate (G) Gate protection diode Source (S) Internal diode PIN CONNECTIONS S: Source D: Drain G: Gate ABSOLUTE MAXIMUM RATINGS (TA = 25 C) PARAMETER Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (Pulse) Total Power Dissipation Channel Temperature Storage Temperature SYMBOL VDSS VGSS ID(DC) ID(pulse) PT Tch Tstg PW 10 ms, duty cycle 50 % VGS = 0 VDS = 0 TEST CONDITIONS RATING 16 7.0 0.1 0.2 150 150 -55 to +150 UNIT V V A A mW C C Document No. D11221EJ1V0DS00 (1st edition) Date Published June 1996 P Printed in Japan 0.3 -0 D (c) 1996 2SK1958 ELECTRICAL CHARACTERISTICS (TA = 25 C) PARAMETER Drain Cut-Off Current Gate Leakage Current Gate Cut-Off Voltage Forward Transfer Admittance Drain to Source On-State Resistance Drain to Source On-State Resistance Drain to Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time SYMBOL IDSS IGSS VGS(off) |yfs| RDS(on)1 RDS(on)2 RDS(on)3 Ciss Coss Crss td(on) tr td(off) tf VDD = 3 V, ID = 10 mA, VGS(on) = 3 V, RG = 10 , RL = 300 TEST CONDITIONS VDS = 16 V, VGS = 0 VGS = 7.0 V, VDS = 0 VDS = 3 V, ID = 10 A VDS = 3 V, ID = 10 mA VGS = 1.5 V, ID = 1 mA VGS = 2.5 V, ID = 10 mA VGS = 4.0 V, ID = 10 mA VDS = 3 V, VGS = 0, f = 1.0 MHz 0.5 20 20 7 5 10 13 3 15 70 100 110 50 15 12 0.8 MIN. TYP. MAX. 1.0 3.0 1.1 UNIT A A V mS pF pF pF ns ns ns ns 2 2SK1958 TYPICAL CHARACTERISTICS (TA = 25 C) DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 100 50 2.0 V 80 ID - Drain Current - mA DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE dT- Derating Factor - % 40 1.8 V 60 30 40 20 1.6 V 20 10 1.4 V VGS = 1.2 V 0 60 90 120 30 TA - Ambient Temperature - C 150 0 1 2 3 4 VDS - Drain to Source Voltage - V 5 RDS(on) - Drain to Source On-State Resistance - FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT 500 |yfs| - Forward Transfer Admittance - mS DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 200 TA = -25 C 100 50 VGS = 1.5 V 20 10 2.5 V 5 0.5 1 2 5 4.0 V 10 20 50 100 200 500 VDS = 3 V 200 100 TA = -25 C 25 C 75 C 50 20 10 5 10 20 50 100 ID - Drain Current - mA 200 ID - Drain Current - mA RDS(on) - Drain to Source On-State Resistance - RDS(on) - Drain to Source On-State Resistance - DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 200 TA = 25 C 100 50 DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 200 TA = 75 C 100 50 VGS = 1.5 V 20 10 VGS = 1.5 V 20 10 5 2.5 V 4.0 V 2.5 V 5 0.5 1 2 5 4V 10 20 50 100 200 500 0.5 1 2 5 10 20 50 100 200 500 ID - Drain Current - mA ID - Drain Current - mA 3 2SK1958 DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE DRAIN TOSOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE RDS(on) - Drain to Source On-State Resistance - 30 TA = - 25C RDS(on) - Drain to Source On-State Resistance - 30 TA = 25 C 20 ID = 10 mA 1 mA 20 ID = 10 mA 1 mA 10 10 0 1 5 6 2 3 4 VGS - Gate to Source Voltage - V 7 0 5 6 2 3 4 1 VGS - Gate to Source Voltage - V 7 RDS(on) - Drain to Source On-State Resistance - DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE SOURCE TO DRAIN DIODE FORWARD VOLTAGE 200 30 TA = 75 C ISD - Diode Forward Current - mA 100 50 20 10 5 2 1 0 0.2 0.4 0.6 0.8 VSD - Source to Drain Voltage - V 1.0 20 ID = 10 mA 1 mA 10 0 5 6 2 3 4 1 VGS - Gate to Source Voltage - V 7 CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 50 td(on), tr, td(off), tf - Switching Time - ns Ciss, Crss, Coss, - Capacitance - pF SWITCHING CHARACTERISTICS 500 VDD = 3 V VGS(on) = 3 V tr 200 VGS = 0 f = 1 MHz 20 10 5 Ciss Coss 100 50 tf td(on) 20 td(off) 2 1 Crss 0.5 20 1 2 5 10 VDS - Drain to Source Voltage - V 50 10 20 50 100 200 ID - Drain Current - mA 500 4 2SK1958 REFERENCE Document Name NEC semiconductor device reliability/quality control system Quality grade on NEC semiconductor devices Semiconductor device mounting technology manual Guide to quality assurance for semiconductor devices Semiconductor selection guide Document No. TEI-1202 IEI-1209 C10535E MEI-1202 X10679E 5 |
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