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| FFB2222A / FMB2222A / MMPQ2222A Discrete POWER & Signal Technologies FFB2222A E2 B2 C1 FMB2222A C2 E1 C1 MMPQ2222A E2 B2 E3 B3 E4 B4 E1 C2 B1 pin #1 B1 B2 E2 pin #1 B1 E1 SC70-6 Mark: .1P SuperSOTTM-6 Mark: .1P SOIC-16 C1 C2 C1 C3 C2 C4 C4 C3 NPN Multi-Chip General Purpose Amplifier This device is for use as a medium power amplifier and switch requiring collector currents up to 500 mA. Sourced from Process 19. Absolute Maximum Ratings* Symbol VCEO VCBO VEBO IC TJ, Tstg Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous Collector-Emitter Voltage TA = 25C unless otherwise noted Parameter Value 40 75 6.0 500 -55 to +150 Units V V V mA C Operating and Storage Junction Temperature Range *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol PD RJA TA = 25C unless otherwise noted Characteristic Total Device Dissipation Derate above 25C Thermal Resistance, Junction to Ambient Effective 4 Die Each Die FFB2222A 300 2.4 415 Max FMB2222A 700 5.6 180 MMPQ2222A 1,000 8.0 125 240 Units mW mW/C C/W C/W C/W (c) 1998 Fairchild Semiconductor Corporation FFB2222A / FMB2222A / MMPQ2222A NPN Multi-Chip General Purpose Amplifier (continued) Electrical Characteristics Symbol Parameter TA = 25C unless otherwise noted Test Conditions Min Typ Max Units OFF CHARACTERISTICS V(BR)CEO V(BR)CBO V(BR)EBO ICEX ICBO IEBO IBL Collector-Emitter Breakdown Voltage* Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current Base Cutoff Current IC = 10 mA, IB = 0 IC = 10 A, IE = 0 IE = 10 A, IC = 0 VCE = 60 V, VEB(OFF) = 3.0 V VCB = 60 V, IE = 0 VCB = 60 V, IE = 0, TA = 125C VEB = 3.0 V, IC = 0 VCE = 60 V, VEB(OFF) = 3.0 V 40 75 6.0 10 0.01 10 10 20 V V V nA A A nA nA ON CHARACTERISTICS hFE DC Current Gain IC = 0.1 mA, VCE = 10 V IC = 1.0 mA, VCE = 10 V IC = 10 mA, VCE = 10 V IC= 10 mA,VCE= 10 V,TA= -55C IC = 150 mA, VCE = 10 V* IC = 150 mA, VCE = 1.0 V* IC = 500 mA, VCE = 10 V* IC = 150 mA, IB = 15 mA IC = 500 mA, IB = 50 mA IC = 150 mA, IB = 1.0 mA IC = 500 mA, IB = 50 mA 35 50 75 35 100 50 40 300 VCE(sat) VBE(sat) Collector-Emitter Saturation Voltage* Base-Emitter Saturation Voltage* 0.6 0.3 1.0 1.2 2.0 V V V V SMALL SIGNAL CHARACTERISTICS fT Cobo Cibo NF Current Gain - Bandwidth Product Output Capacitance Input Capacitance Noise Figure IC = 20 mA, VCE = 20 V, f = 100 MHz VCB = 10 V, IE = 0, f = 100 kHz VEB = 0.5 V, IC = 0, f = 100 kHz IC = 100 A, VCE = 10 V, RS = 1.0 k, f = 1.0 kHz 300 4.0 20 2.0 MHz pF pF dB SWITCHING CHARACTERISTICS td tr ts tf Delay Time Rise Time Storage Time Fall Time VCC = 30 V, VBE(OFF) = 0.5 V, IC = 150 mA, IB1 = 15 mA VCC = 30 V, IC = 150 mA, IB1 = IB2 = 15 mA 8 20 180 40 ns ns ns ns *Pulse Test: Pulse Width 300 s, Duty Cycle 2.0% FFB2222A / FMB2222A / MMPQ2222A NPN Multi-Chip General Purpose Amplifier (continued) Typical Characteristics 500 VCE = 5V VCESAT- COLLECTOR-EMITTER VOLTAGE (V) h FE - TYPICAL PULSED CURRENT GAIN Typical Pulsed Current Gain vs Collector Current 400 300 200 25 C 125 C Collector-Emitter Saturation Voltage vs Collector Current 0.4 = 10 0.3 125 C 25 C 0.2 100 - 40 C 0.1 - 40 C 0 0.1 0.3 1 3 10 30 100 I C - COLLECTOR CURRENT (mA) 300 1 10 100 I C - COLLECTOR CURRENT (mA) 500 V BE(ON) BASE-EMITTER ON VOLTAGE (V) VBESAT- BASE-EMITTER VOLTAGE (V) Base-Emitter Saturation Voltage vs Collector Current 1 = 10 Base-Emitter ON Voltage vs Collector Current 1 VCE = 5V 0.8 - 40 C 25 C 0.8 - 40 C 25 C 0.6 0.6 125 C 125 C 0.4 0.4 1 IC 10 100 - COLLECTOR CURRENT (mA) 500 0.2 0.1 1 10 I C - COLLECTOR CURRENT (mA) 25 Collector-Cutoff Current vs Ambient Temperature I CBO- COLLECTOR CURRENT (nA) 500 Emitter Transition and Output Capacitance vs Reverse Bias Voltage 20 CAPACITANCE (pF) 16 12 C te 100 10 1 0.1 V CB = 40V f = 1 MHz 8 4 C ob 25 50 75 100 125 T A - AMBIENT TEMPERATURE ( C) 150 0.1 1 10 REVERSE BIAS VOLTAGE (V) 100 FFB2222A / FMB2222A / MMPQ2222A NPN Multi-Chip General Purpose Amplifier (continued) Typical Characteristics (continued) Turn On and Turn Off Times vs Collector Current 400 I B1 = I B2 = 320 V cc = 25 V Switching Times vs Collector Current 400 I B1 = I B2 = 320 V cc = 25 V Ic 10 Ic 10 TIME (nS) TIME (nS) 240 160 80 t on t off 240 160 80 0 10 tf td ts tr 0 10 100 I C - COLLECTOR CURRENT (mA) 1000 100 I C - COLLECTOR CURRENT (mA) 1000 Power Dissipation vs Ambient Temperature 1 PD - POWER DISSIPATION (W) 0.75 SOT-6 0.5 0.25 0 0 25 50 75 100 o TEMPERATURE ( C) 125 150 FFB2222A / FMB2222A / MMPQ2222A NPN Multi-Chip General Purpose Amplifier (continued) Test Circuits 30 V 200 16 V 1.0 K 0 200ns 500 FIGURE 1: Saturated Turn-On Switching Time - 15 V 6.0 V 1k 37 30 V 1.0 K 0 200ns 50 FIGURE 2: Saturated Turn-Off Switching Time |
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