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| RECTRON SEMICONDUCTOR TECHNICAL SPECIFICATION RS801 THRU RS807 SINGLE-PHASE SILICON BRIDGE RECTIFIER VOLTAGE RANGE 50 to 1000 Volts CURRENT 8.0 Amperes FEATURES * * * * * * Low leakage Low forward voltage Mounting position: Any Surge overload rating: 250 amperes peak Ideal for printed circuit boards High forward surge current capability .935 (23.7) .895 (22.7) .15 x .23L (3.8 x 5.7L) HOLE THRU RS-8 MECHANICAL DATA * UL listed the recognized component directory, file #E94233 * Epoxy: Device has UL flammability classification 94V-O .700 (17.8) .600 (16.8) .300 (7.5) .780 (19.8) .740 (18.8) AC 1.00 (25.4) MIN. .052 (1.3) DIA. .048 (1.2) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 o C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. .140 (3.5) .220 (5.6) .180 (4.6) .280 (7.1) .268 (6.8) Dimensions in inches and (millimeters) MAXIMUM RATINGS (At TA = 25 oC unless otherwise noted) RATINGS Maximum Recurrent Peak Reverse Voltage Maximum RMS Bridge Input Voltage Maximum DC Blocking Voltage Maximum Average Forward Rectified Output Current at Tc = 75 oC with heat sink Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load Operating and Storage Temperature Range IFSM TJ,TSTG 250 -55 to + 150 Amps 0 SYMBOL VRRM VRMS VDC IO RS801 50 35 50 RS802 100 70 100 RS803 200 140 200 RS804 400 280 400 8.0 RS805 600 420 600 RS806 800 560 800 RS807 1000 700 1000 UNITS Volts Volts Volts Amps C ELECTRICAL CHARACTERISTICS (At TA = 25oC unless otherwise noted) CHARACTERISTICS Maximum Forward Voltage Drop per element at 8.0A DC Maximum Reverse Current at Rated DC Blocking Voltage per element @TA = 25 oC @TC = 100 oC SYMBOL VF IR 0.2 mAmps 2001-5 RS801 RS802 RS803 RS804 1.1 10 RS805 RS806 RS807 UNITS Volts uAmps RATING AND CHARACTERISTIC CURVES (RS801 THRU RS807) TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS POWER DISSIPATION 28 24 20 16 12 8 4 0 0.6 0.8 1 1.2 sine wave Tj=150 INSTANTANEOUS FORWARD CURRENT, (A) 30 20 10 5 2 1 0.5 0.2 0.1 0.4 TC = 150 (TYP) TC = 25 (TYP) pulse test per one diode POWER DISSIPATION PF(W) 0 2 4 6 8 10 12 14 INSTANTANEOUS FORWARD VOLTAGE, (V) AVERAGE RECTIFIED FORWARD CURRENT, Io (A) SURGE FORWARD CURRENT CAPABILITY PEAK FORWARD SURGE CURRENT, (A) 260 IFSM TYPICAL FORWARD CURRENT DERATING CURVE 9 AVERAGE FORWARD CURRENT, (A) heatsink Tc Tc sine wave 0 8 7 6 5 4 3 2 1 0 0 200 8.3ms 8.3ms 1 cycle non-repetitive Tj=25 sine wave R-load on heatsink 100 0 1 2 5 10 20 50 100 NUMBER OF CYCLE 25 50 75 100 125 ) 150 175 CASE TEMPERATURE, ( RECTRON |
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