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| MOS FET Array STA509A Absolute Maximum Ratings (Ta=25C) Symbol VDSS VGSS ID ID (pulse) *1 PT Ratings 525 20 3 6 Unit V V A A W W Electrical Characteristics Symbol V(BR) DSS IGSS IDSS VTH Re (yfs) RDS (ON) Ciss Coss Crss td (on) tr td (off) tf VSD Test Conditions ID = 1mA, VGS = 0V VGS = 20V VDS = 40V, VGS = 0V VDS = 10V, ID = 250A VDS = 10V, ID = 1.0A VGS = 10V, ID = 1.0A VGS = 4V, ID = 1.0A VDS = 10V f = 1.0MHz VGS = 0V ID = 1A VDD 12V RL = 12 VGS = 5V RG1 = 50, RG2 = 10 ISD = 6A, VGS = 0V min 47 Ratings typ 52 max 57 1.0 100 2.5 0.25 0.3 (Ta=25C) Unit External Dimensions STA 25.25 0.2 4 (Ta = 25C) 20 (Tc = 25C) EAS *2 40 mJ Tch C 150 Tstg C -55 to +150 *1 PW 100s, duty 1% *2 VDD = 12V, L = 10mH, unclamped, RG = 10 1.0 1.0 0.2 0.25 200 120 20 2.0 7.4 3.3 4.2 1.0 1.5 V A A V S pF pF pF s s s s V 0.2 0.2 9.0 0.2 b a 11.3 3.5 0.5 2.3 1.0 0.25 0.5 0.15 (2.54) 0 0.3 0 0.3 9*2.54=22.86 0.05 0.15 1 2 3 4 5 6 7 8 9 10 SGDGDGDGDS a) Type No. b) Lot No. (Unit: mm) s ID -- VDS Characteristics 6 5 VGS = 5V VGS = 10V VGS = 4V s ID -- VGS Characteristics 20 10 VDS = 10V s RDS (on) -- ID Characteristics 0.8 VGS = 4V Ta = 150C 0.6 RDS (on) () 4 1 0.5 75C ID (A) ID (A) 1.2 3 2 VGS = 3V 0.4 25C 0.1 1 0 0.01 Ta = -55C 25C 75C 150C -55C 0.2 0 2 4 6 8 10 12 14 0 0 1 2 3 4 5 6 0 1 2 3 4 5 4.0 C1.5 0.5 0.2 0.2 6 VDS (V) VGS (V) ID (A) s RDS (on) -- TC Characteristics 0.5 ID = 1A s Re (yfs) -- ID Characteristics 10 VDS = 10V s IDR -- VSD Characteristics 10 0.4 VGS = 4V typ. 5 8 RDS (on) () Re (yfs) (S) 0.2 VGS = 10V typ. 1 IDR (A) 0.3 6 0.1 0.5 Ta = -55C 25C 150C 4 Ta = 150C 75C 25C -55C 2 0 -50 0 50 100 150 0.2 0.05 0.1 0.5 1 6 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 Tc (C) ID (A) VSD (V) s Safe Operating Area (single pulse) 10 ID (pulse) max (Tc = 25C) 10 0 s 1m s Equivalent Circuit Diagram 5 (o L n) IM IT ED RD S 10 m s 3 5 7 9 ID (A) 1 2 4 6 8 0.5 1 10 0.1 0.5 1 5 10 50 VDS (V) 80 |
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