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| DATA SHEET MOS FIELD EFFECT TRANSISTOR PA1970 N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION The PA1970 is a switching device which can be driven directly by a 2.5 V power source. The device features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. PACKAGE DRAWING (Unit: mm) 0.32 +0.1 -0.05 0.65-0.15 +0.1 0.16+0.1 -0.06 2.8 0.2 6 5 4 1.5 FEATURES * 2.5 V drive available * Low on-state resistance RDS(on)1 = 69 m MAX. (VGS = 4.5 V, ID = 1.0 A) RDS(on)2 = 72 m MAX. (VGS = 4.0 V, ID = 1.0 A) RDS(on)3 = 107 m MAX. (VGS = 2.5 V, ID = 1.0 A) 0 to 0.1 1 2 3 0.95 0.95 0.65 0.9 to 1.1 1.9 2.9 0.2 ORDERING INFORMATION PART NUMBER PACKAGE SC-95 (Mini Mold Thin Type) PA1970TE Note 6: 1: 5: Drain 1 Gate 1 Source 1 4: 3: 2: Drain 2 Gate 2 Source 2 Note Marking: TT ABSOLUTE MAXIMUM RATINGS (TA = 25C) Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TA = 25C) Drain Current (pulse) Note1 Note2 VDSS VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg Note2 20 12 2.2 8.8 V V A A W W C C EQUIVALENT CIRCUITS Drain 1 Drain 2 Gate 1 Gate Protection Diode Body Diode Gate 2 Gate Protection Diode Body Diode Total Power Dissipation (2 units) (TA = 25C) Total Power Dissipation (1 unit) (TA = 25C) Channel Temperature Storage Temperature 1.15 0.57 150 -55 to +150 Source 1 Source 2 Notes 1. PW 10 s, Duty Cycle 1% 2 2. Mounted on FR-4 board of 5000 mm x 1.1 mm, t 5 sec. Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. G15934EJ1V0DS00 (1st edition) Date Published September 2002 NS CP(K) Printed in Japan (c) 2001 PA1970 ELECTRICAL CHARACTERISTICS (TA = 25C) CHARACTERISTICS Zero Gate Voltage Drain Current Gate Leakage Current Gate Cut-off Voltage Forward Transfer Admittance Drain to Source On-state Resistance SYMBOL IDSS IGSS VGS(off) | yfs | RDS(on)1 RDS(on)2 RDS(on)3 Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Body Diode Forward Voltage Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD VF(S-D) VDD = 16 V VGS = 4.0 V ID = 2.2 A IF = 2.2 A, VGS = 0 V TEST CONDITIONS VDS = 20 V, VGS = 0 V VGS = 12 V, VDS = 0 V VDS = 10 V, ID = 1.0 mA VDS = 10 V, ID = 1.0 A VGS = 4.5 V, ID = 1.0 A VGS = 4.0 V, ID = 1.0 A VGS = 2.5 V, ID = 1.0 A VDS = 10 V VGS = 0 V f = 1.0 MHz VDD = 10 V, ID = 1.0 A VGS = 4.0 V RG = 10 0.5 1.0 0.97 3.3 55 57 80 160 60 40 17 90 100 120 2.3 0.5 1.1 0.85 69 72 107 MIN. TYP. MAX. 10 10 1.5 UNIT A A V S m m m pF pF pF ns ns ns ns nC nC nC V TEST CIRCUIT 1 SWITCHING TIME TEST CIRCUIT 2 GATE CHARGE D.U.T. D.U.T. RL VGS PG. RG Wave Form VGS 0 10% VGS 90% IG = -2 mA 50 RL VDD VDD PG. 90% VDS 90% 10% 10% VGS(-) 0 = 1 s Duty Cycle 1% VDS VDS Wave Form 0 td(on) ton tr td(off) toff tf 2 Data Sheet G15934EJ1V0DS PA1970 TYPICAL CHARACTERISTICS (TA = 25C) DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 120 TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE 1.2 Mounted on FR-4 board of 2 5000 mm x 1.1 m m, t 5 sec. dT - Percentage of Rated Power - % 80 PT - Total Power Dissipation - W 100 1 0.8 2 units 0.6 0.4 0.2 0 1 unit 60 40 20 0 0 25 50 75 100 125 150 175 0 25 50 75 100 125 150 175 TA - Ambient Temperature - C FORWARD BIAS SAFE OPERATING AREA 100 RDS(on) limited (VGS = 4.5 V) PW = 1 ms 10 ms ID(pulse) 100 ms ID(DC) 5 s(2 units) 5 s(1 unit) TA - Ambient Temperature - C 10 ID - Drain Current - A 1 0.1 Single pulse Mounted on FR-4 board of 2 5000 mm x 1.1 mm 0.01 0.1 1 10 100 VDS - Drain to Source Voltage - V TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH rth(ch-A) - Transient Thermal Resistance - C/W 1000 PD(FET1) : PD(FET2) = 1:0 100 PD(FET1) : PD(FET2) = 1:1 10 Single pulse Mounted on FR-4 board of 2 5000 mm x 1.1 mm 1 1m 10 m 100 m 1 10 100 1000 PW - Pulse Width - s Data Sheet G15934EJ1V0DS 3 PA1970 DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 10 Pulsed 8 VGS = 4.5 V 4.0 V 6 FORWARD TRANSFER CHARACTERISTICS 10 1 0.1 0.01 0.001 0.0001 0.00001 V D S = 10 V P uls ed ID - Drain Current - A ID - Drain Current - A 4 2.5 V 2 T A = 1 25C 75C 25C - 25C 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0 0.5 1 1.5 2 2.5 VDS - Drain to Source Voltage - V VGS - Gate to Source Voltage - V GATE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE 1.2 10 FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT | yfs | - Forward Transfer Admittance - S VDS = 10 V Pulsed VGS(off) - Gate Cut-off Voltage - V 1.1 1 0.9 0.8 0.7 0.6 -50 0 50 VDS = 10 V ID = 1.0 mA 1 TA = 125C 75C 25C -25C 0.1 100 150 0.01 0.01 0.1 1 10 Tch - Channel Temperature - C DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE RDS(on) - Drain to Source On-state Resistance - m 160 ID = 1.0 A Pulsed 120 VGS = 2.5 V 4.0 V 80 ID - Drain Current - A DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE RDS(on) - Drain to Source On-state Resistance - m 160 ID = 1.0 A Pulsed 120 80 4.5 V 40 40 0 -50 0 50 100 150 0 0 2 4 6 8 10 12 Tch - Channel Temperature - C VGS - Gate to Source Voltage - V 4 Data Sheet G15934EJ1V0DS PA1970 DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT RDS(on) - Drain to Source On-state Resistance - m 160 VGS = 4.5 V Pulsed 120 TA = 125C 75C DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT RDS(on) - Drain to Source On-state Resistance - m 160 VGS = 4.0 V Pulsed 120 TA = 125C 75C 80 80 40 25C -25C 40 25C -25C 0 0.01 0 0.01 0.1 1 10 0.1 1 10 ID - Drain Current - A DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 160 ID - Drain Current - A SWITCHING CHARACTERISTICS 1000 RDS(on) - Drain to Source On-state Resistance - m 120 TA = 125C 75C td(on), tr, td(off), tf - Switching Time - ns VGS = 2.5 V Pulsed VDD = 10 V VGS = 4.0 V RG = 10 td(off) 100 tf tr td(on) 80 40 25C -25C 0 0.01 0.1 1 10 10 0.1 1 10 ID - Drain Current - A ID - Drain Current - A CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 1000 10 VGS = 0 V f = 1.0 MH z SOURCE TO DRAIN DIODE FORWARD VOLTAGE VGS = 0 V Pulsed Ciss, Coss, Crss - Capacitance - pF IF - Diode Forward Current - A 1 Ciss 100 Coss Crss 0.1 10 0.1 1 10 100 0.01 0.4 0.6 0.8 1 1.2 VDS - Drain to Source Voltage - V VF(S-D) - Source to Drain Voltage - V Data Sheet G15934EJ1V0DS 5 PA1970 DYNAMIC INPUT/OUTPUT CHARACTERISTICS 5 ID = 2.2 A VGS - Gate to Source Voltage - V 4 VDD = 10 V 16 V 3 2 1 0 0 0.5 1 1.5 2 2.5 3 QG - Gate Charge - nC 6 Data Sheet G15934EJ1V0DS PA1970 [MEMO] Data Sheet G15934EJ1V0DS 7 |
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