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| MITSUBISHI IGBT MODULES CM200HA-24H HIGH POWER SWITCHING USE INSULATED TYPE A Q S M H N V-DIA.(4 TYP.) E E C D F CM GC G X-M4 THD. (2 TYP.) P B K R U K W-M6 THD. (2 TYP.) E J L Description: Mitsubishi IGBT Modules are designed for use in switching applications. Each module consists of one IGBT in a single configuration with a reverseconnected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. Features: Low Drive Power Low VCE(sat) Discrete Super-Fast Recovery Free-Wheel Diode High Frequency Operation Isolated Baseplate for Easy Heat Sinking Applications: AC Motor Control Motion/Servo Control UPS Welding Power Supplies Ordering Information: Example: Select the complete part module number you desire from the table below -i.e. CM200HA-24H is a 1200V (VCES), 200 Ampere Single IGBT Module. Type CM Current Rating Amperes 200 VCES Volts (x 50) 24 T E E G C Outline Drawing and Circuit Diagram Dimensions A B C D E F G H J K L Inches 4.21 3.6610.01 2.44 1.890.01 1.42 Max. 1.34 1.18 1.14 0.98 Max. 0.94 0.93 Millimeters 107.0 93.00.25 62.0 48.00.25 36.0 Max. 34.0 30.0 29.0 25.0 Max. 24.0 23.5 Dimensions M N P Q R S T U V W X Inches 0.83 0.69 0.63 0.51 0.43 0.35 0.28 0.12 0.26 Dia. M6 Metric M4 Metric Millimeters 21.0 17.5 16.0 13.0 11.0 9.0 7.0 3.0 Dia. 6.5 M6 M4 Sep.1998 MITSUBISHI IGBT MODULES CM200HA-24H HIGH POWER SWITCHING USE INSULATED TYPE Absolute Maximum Ratings, Tj = 25 C unless otherwise specified Ratings Junction Temperature Storage Temperature Collector-Emitter Voltage (G-E SHORT) Gate-Emitter Voltage (C-E SHORT) Collector Current (Tc = 25C) Peak Collector Current (Tj 150C) Emitter Current** (Tc = 25C) Peak Emitter Current** Maximum Collector Dissipation (Tc = 25C) Mounting Torque, M6 Main Terminal Mounting Torque, M6 Mounting Mounting Torque, M4 Terminal Weight Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) Symbol Tj Tstg VCES VGES IC ICM IE IEM Pc - - - - Viso CM600HU-12H -40 to 150 -40 to 125 1200 20 200 400* 200 400* 1500 1.96~2.94 1.96~2.94 0.98~1.47 400 2500 Units C C Volts Volts Amperes Amperes Amperes Amperes Watts N*m N*m N*m Grams Vrms * Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating. **Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). Static Electrical Characteristics, Tj = 25 C unless otherwise specified Characteristics Collector-Cutoff Current Gate Leakage Current Gate-Emitter Threshold Voltage Collector-Emitter Saturation Voltage Symbol ICES IGES VGE(th) VCE(sat) QG VEC Test Conditions VCE = VCES, VGE = 0V VGE = VGES, VCE = 0V IC = 20mA, VCE = 10V IC = 200A, VGE = 15V IC = 200A, VGE = 15V, Tj = 150C Total Gate Charge Emitter-Collector Voltage VCC = 600V, IC = 200A, VGE = 15V IE = 200A, VGE = 0V Min. - - 4.5 - - - - Typ. - - 6.0 2.5 2.25 1000 - Max. 1.0 0.5 7.5 3.4** - - 3.4 Units mA A Volts Volts Volts nC Volts ** Pulse width and repetition rate should be such that device junction temperature rise is negligible. Dynamic Electrical Characteristics, Tj = 25 C unless otherwise specified Characteristics Input Capacitance Output Capacitance Reverse Transfer Capacitance Resistive Load Switching Times Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Symbol Cies Coes Cres td(on) tr td(off) tf trr Qrr IE = 200A, diE/dt = -400A/s IE = 200A, diE/dt = -400A/s VCC = 600V, IC = 200A, VGE1 = VGE2 = 15V, RG = 1.6 VGE = 0V, VCE = 10V Test Conditions Min. - - - - - - - - - Typ. - - - - - - - - 1.49 Max. 40 14 8 250 400 300 350 250 - Units nF nF nF ns ns ns ns ns C Diode Reverse Recovery Time Diode Reverse Recovery Charge Thermal and Mechanical Characteristics, Tj = 25 C unless otherwise specified Characteristics Thermal Resistance, Junction to Case Thermal Resistance, Junction to Case Contact Thermal Resistance Symbol Rth(j-c) Rth(j-c) Rth(c-f) Test Conditions Per IGBT Per FWDi Per Module, Thermal Grease Applied Min. - - - Typ. - - - Max. 0.085 0.18 0.040 Units C/W C/W C/W Sep.1998 MITSUBISHI IGBT MODULES CM200HA-24H HIGH POWER SWITCHING USE INSULATED TYPE OUTPUT CHARACTERISTICS (TYPICAL) TRANSFER CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 400 COLLECTOR CURRENT, IC, (AMPERES) COLLECTOR CURRENT, IC, (AMPERES) 400 COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) Tj = 25oC 15 5 VCE = 10V Tj = 25C Tj = 125C VGE = 15V Tj = 25C Tj = 125C 12 320 VGE = 20V 11 320 4 240 10 240 3 160 160 2 80 7 9 8 80 1 0 0 2 4 6 8 10 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) 0 0 4 8 12 16 20 GATE-EMITTER VOLTAGE, VGE, (VOLTS) 0 0 80 160 240 320 400 COLLECTOR-CURRENT, IC, (AMPERES) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) CAPACITANCE VS. VCE (TYPICAL) 10 COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) 103 Tj = 25C EMITTER CURRENT, IE, (AMPERES) CAPACITANCE, Cies, Coes, Cres, (nF) 102 Tj = 25C 7 5 3 2 8 IC = 400A Cies 101 Coes 6 IC = 200A 102 7 5 3 2 4 100 Cres 2 IC = 80A VGE = 0V 0 0 4 8 12 16 20 GATE-EMITTER VOLTAGE, VGE, (VOLTS) 101 1.0 1.5 2.0 2.5 3.0 3.5 10-1 10-1 100 101 102 EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS) COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) REVERSE RECOVERY CHARACTERISTICS (TYPICAL) REVERSE RECOVERY CURRENT, Irr, (AMPERES) GATE CHARGE, VGE 103 REVERSE RECOVERY TIME, t rr, (ns) 103 tf td(off) td(on) 102 20 GATE-EMITTER VOLTAGE, VGE, (VOLTS) IC = 200A 16 SWITCHING TIME, (ns) VCC = 400V VCC = 600V Irr 102 tr 102 t rr 12 101 8 VCC = 600V VGE = 15V RG = 1.6 Tj = 125C di/dt = -400A/sec Tj = 25C 4 101 101 102 COLLECTOR CURRENT, IC, (AMPERES) 103 101 101 102 EMITTER CURRENT, IE, (AMPERES) 100 103 0 0 400 800 1200 1600 GATE CHARGE, QG, (nC) Sep.1998 MITSUBISHI IGBT MODULES CM200HA-24H HIGH POWER SWITCHING USE INSULATED TYPE NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z th(j-c) Zth = Rth * (NORMALIZED VALUE) NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z th(j-c) Zth = Rth * (NORMALIZED VALUE) 10-3 101 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT) 10-2 10-1 100 101 10-3 101 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (FWDi) 10-2 10-1 100 101 100 Single Pulse TC = 25C Per Unit Base = R th(j-c) = 0.085C/W 100 Single Pulse TC = 25C Per Unit Base = R th(j-c) = 0.18C/W 10-1 10-1 10-1 10-1 10-2 10-2 10-2 10-2 10-3 10-5 TIME, (s) 10-4 10-3 10-3 10-3 10-5 TIME, (s) 10-4 10-3 10-3 Sep.1998 |
Price & Availability of CM200HA-24H
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