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v01.0604
MICROWAVE CORPORATION
HMC375LP3
GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 1.7 - 2.2 GHz
Features
Noise Figure: 0.9 dB +34 dBm Output IP3 Gain: 17 dB Very Stable Gain vs. Supply & Temperature Single Supply: +5.0 V @ 136 mA 50 Ohm Matched Output
8
AMPLIFIERS - SMT
Typical Applications
The HMC375LP3 is ideal for basestation receivers: * GSM, GPRS & EDGE * CDMA & W-CDMA * DECT
Functional Diagram
General Description
The HMC375LP3 high dynamic range GaAs PHEMT MMIC Low Noise Amplifier is ideal for GSM & CDMA cellular basestation front-end receivers operating between 1.7 and 2.2 GHz. This LNA has been optimized to provide 0.9 dB noise figure, 17 dB gain and +33 dBm output IP3 from a single supply of +5.0V @ 136mA. Input and output return losses are 14 dB typical with the LNA requiring minimal external components to optimize the RF input match, RF ground and DC bias. The HMC375LP3 shares the same package with the HMC356LP3 and HMC372LP3 high IP3 LNAs. A low cost, leadless 3x3 mm (LP3) SMT QFN package houses the low noise amplifier.
Electrical Specifications, TA = +25 C, Vs = +5V
Parameter Frequency Range Gain Gain Variation Over Temperature Noise Figure Input Return Loss Output Return Loss Reverse Isolation Output Power for 1dB Compression (P1dB) Saturated Output Power (Psat) Output Third Order Intercept (IP3) (-20 dBm Input Power per tone, 1 MHz tone spacing) Supply Current (Idd) 16 16.5 Min. Typ. 1.8 - 1.9 18.5 0.014 1.0 12 13 35 18.5 19.5 34 136 16 0.021 1.35 15.5 Max. Min. Typ. 1.9 - 2.0 17.5 0.014 0.95 13 16 34 18.5 19.5 33.5 136 15 0.021 1.2 15 Max. Min. Typ. 2.0 - 2.1 17 0.014 0.9 14 11 34 18 19.5 33 136 14.5 0.021 1.2 13 Max. Min. Typ. 2.1 - 2.2 15 0.014 0.9 15 8 34 17.5 19.5 32.5 136 0.021 1.3 Max. Units GHz dB dB/C dB dB dB dB dBm dBm dBm mA
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For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com
v01.0604
MICROWAVE CORPORATION
HMC375LP3
GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 1.7 - 2.2 GHz
Broadband Gain & Return Loss
25 20
Noise Figure vs. Temperature
1.5 1.4 1.3 NOISE FIGURE (dB)
+25 C +85 C -40 C
8
AMPLIFIERS - SMT
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15 RESPONSE (dB) 10 5 0 -5 -10 -15 -20 0.5 0.75 1 1.25 1.5 1.75 2 2.25 FREQUENCY (GHz) 2.5 2.75 3
S21 S11 S22
1.2 1.1 1 0.9 0.8 0.7 0.6 0.5 1.7 1.8 1.9 2 FREQUENCY (GHz) 2.1 2.2
Gain vs. Temperature
24 22
Noise Figure vs. Vdd
1.5 1.4 1.3 NOISE FIGURE (dB) 1.2 1.1 1 0.9 0.8 0.7 0.6 0.5
+4.5 V +5.0 V +5.5 V
20 GAIN (dB) 18 16 14 12 10 1.7 1.8 1.9 2 FREQUENCY (GHz) 2.1 2.2
+25 C +85 C -40 C
1.7
1.8
1.9 2 FREQUENCY (GHz)
2.1
2.2
Gain vs. Vdd
22 21 20
Reverse Isolation vs. Temperature
-15 -20 ISOLATION (dB) -25 -30 -35 -40 -45 -50
19 GAIN (dB) 18 17 16 15 14 13 12 1.7 1.8 1.9 2 FREQUENCY (GHz) 2.1 2.2
+4.5 V +5.0 V +5.5 V
+25 C +85 C -40 C
1.7
1.8
1.9 2 FREQUENCY (GHz)
2.1
2.2
For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com
v01.0604
MICROWAVE CORPORATION
HMC375LP3
GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 1.7 - 2.2 GHz
8
AMPLIFIERS - SMT
Input Return Loss vs. Temperature
0
+25 C -40 C +85 C
Output Return Loss vs. Temperature
0
+25 C +85 C -40 C
-5 RETURN LOSS (dB)
-5 RETURN LOSS (dB) 2.2
-10
-10
-15
-15
-20
-20
-25 1.7 1.8 1.9 2 FREQUENCY (GHz) 2.1
-25 1.7 1.8 1.9 2 FREQUENCY (GHz) 2.1 2.2
Output IP3 vs. Temperature
40 39
P1dB & PSAT vs. Temperature
24 23 COMPRESSION (dBm)
PSAT +25 C +85 C -40 C
38 OUTPUT IP3 (dBm) 37 36 35 34 33 32 31 30 1.7 1.8
+25 C +85 C -40 C
22 21 20 19 18 17 16 15
P1dB
1.9 2 FREQUENCY (GHz)
2.1
2.2
14 1.7
1.8
1.9
2
2.1
2.2
FREQUENCY (GHz)
Output IP3 vs. Vdd
40 39
P1dB vs. Vdd
24 23 22 OUTPUT P1dB (dBm)
+4.5 V +5.0 V +5.5 V +4.5 V +5.0 V +5.5 V
38 OUTPUT IP3 (dBm) 37 36 35 34 33 32 31 30 1.7 1.8
21 20 19 18 17 16 15 14 13 12
1.9 2 FREQUENCY (GHz)
2.1
2.2
1.7
1.8
1.9 2 FREQUENCY (GHz)
2.1
2.2
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For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com
v01.0604
MICROWAVE CORPORATION
HMC375LP3
GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 1.7 - 2.2 MHz
Absolute Maximum Ratings
Drain Bias Voltage (Vdd1, Vdd2) RF Input Power (RFin)(Vs = +5.0 Vdc) Channel Temperature Continuous Pdiss (T = 85 C) (derate 15.6 mW/C above 85 C) Thermal Resistance (channel to ground paddle) Storage Temperature Operating Temperature +8.0 Vdc +15 dBm 150 C 1.015 W
Typical Supply Current vs. Vdd
Vdd (Vdc) +4.5 +5.0 +5.5 Idd (mA) 135 136 137
8
AMPLIFIERS - SMT
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64.1 C/W -65 to +150 C -40 to +85 C
Outline Drawing
NOTES: 1. PACKAGE BODY MATERIAL: LOW STRESS INJECTION MOLDED PLASTIC SILICA AND SILICON IMPREGNATED. 2. LEAD AND GROUND PADDLE MATERIAL: COPPER ALLOY 3. LEAD AND GROUND PADDLE PLATING: Sn/Pb SOLDER 4. DIMENSIONS ARE IN INCHES [MILLIMETERS]. 5. LEAD SPACING TOLERANCE IS NON-CUMULATIVE 6. CHARACTERS TO BE HELVETICA MEDIUM, 0.35 HIGH, WHITE INK, OR LASER MARK LOCATED APPROX. AS SHOWN. 7. PAD BURR LENGTH SHALL BE 0.15mm MAXIMUM. PAD BURR HEIGHT SHALL BE 0.05mm MAXIMUM. 8. PACKAGE WARP SHALL NOT EXCEED 0.05mm. 9. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO PCB RF GROUND. 9. REFER TO HITTITE APPLICATION NOTE FOR SUGGESTED PCB LAND PATTERN.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com
v01.0604
MICROWAVE CORPORATION
HMC375LP3
GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 1.7 - 2.2 GHz
8
AMPLIFIERS - SMT
Pin Descriptions
Pin Number 1, 3, 4, 6-10,12,14,16 2 Function N/C RF IN Description No connection necessary. These pins may be connected to RF/DC ground. This pin is matched to 50 Ohms with a 13 nH inductor to ground. See Application Circuit. Interface Schematic
5
ACG
AC Ground - An external capacitor of 0.01F to ground is required for low frequency bypassing. See Application Circuit for further details.
11
RF OUT
This pin is AC coupled and matched to 50 Ohms.
13,15
Vdd2, Vdd1
Power supply voltage. Choke inductor and bypass capacitor are required. See application circuit.
GND
Package bottom must be connected to RF/DC ground.
Application Circuit
Note: L1, L2, L3 and C1 should be located as close to pins as possible.
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For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com
v01.0604
MICROWAVE CORPORATION
HMC375LP3
GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 1.7 - 2.2 GHz
Evaluation PCB
8
AMPLIFIERS - SMT
List of Material
Item J1 - J2 J3 - J4 C1 C2, C3 L1 L2 L3 U1 PCB* Description PC Mount SMA RF Connector DC Pin 1000 pF Capacitor, 0402 Pkg. 10000 pF Capacitor, 0603 Pkg. 13nH Inductor, 0402 Pkg. 33nH Inductor, 0603 Pkg. 24nH Inductor, 0402 Pkg. HMC375LP3 Amplifier 107514 Eval Board
The circuit board used in the final application should use RF circuit design techniques. Signal lines should have 50 ohm impedance while the package ground leads and exposed paddle should be connected directly to the ground plane similar to that shown. A sufficient number of VIA holes should be used to connect the top and bottom ground planes. The evaluation circuit board shown is available from Hittite upon request.
* Circuit Board Material: Rogers 4350
For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com
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