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SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION.
B
KTC945B
EPITAXIAL PLANAR NPN TRANSISTOR
C
FEATURES
: hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.) Low Noise : NF=1dB(Typ.). at f=1kHz Complementary to KTA733B(O, Y, GR class).
K D E G N
A
Excellent hFE Linearity.
MAXIMUM RATING (Ta=25
CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Range
)
SYMBOL VCBO VCEO VEBO IC PC Tj Tstg RATING 60 50 5 150 625 150 -55 150 UNIT V
L
F
H
F
1
2
3
V V mA mW
M
C
DIM A B C D E F G H J K L M N
MILLIMETERS 4.70 MAX 4.80 MAX 3.70 MAX 0.45 1.00 1.27 0.85 0.45 _ 14.00 + 0.50 0.55 MAX 2.30 0.45 MAX 1.00
J
1. EMITTER 2. BASE 3. COLLECTOR
TO-92
ELECTRICAL CHARACTERISTICS (Ta=25
CHARACTERISTIC Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Transition Frequency Collector Output Capacitance Noise Figure Note : hFE Classification O:70~140,
)
TEST CONDITION IC=100 A, IE=0 IC=1mA, IB=0 IE=100 A, IC=0 VCB=60V, IE=0 VEB=5V, IC=0 VCE=6V, IC=2mA IC=100mA, IB=10mA IC=100mA, IB=10mA VCE=10V, IC=10mA VCB=10V, IE=0, f=1MHz VCE=6V, IC=0.1mA Rg=10k , f=1kHz GR:200~400, BL:350~700 MIN. 60 50 5 70 TYP. 0.1 300 2.0 1.0 MAX. 0.1 0.1 700 0.25 1.0 3.5 10 V V MHz pF dB UNIT V V V A A
SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE (Note) VCE(sat) VBE(sat) fT Cob NF Y:120~240,
2001. 9. 14
Revision No : 2
1/2
KTC945B
I C - VCE
240
h FE - I C
COMMON EMITTER Ta=25 C
1k
COMMON
COLLECTOR CURRENT IC (mA)
2.0
DC CURRENT GAIN h FE
200 160
6.0
5.0 3.0
500 300
Ta=100 C Ta=25 C Ta=-25 C
EMITTER VCE =6V
1.0 120 80 40 0 0 1 2 3 4 0.5 I B=0.2mA 0 5 6 7
100 50 30
VCE =1V
10 0.1
0.3
1
3
10
30
100
300
COLLECTOR-EMITTER VOLTAGE VCE (V)
COLLECTOR CURRENT I C (mA)
V CE(sat) - I C
COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V)
COMMON EMITTER I C /I B =10
f T - IE
TRANSITION FREQUENCY f T (MHz) 3k 1k 500 300 100 50 30 10 -0.1
COMMON EMITTER VCE =10V Ta=25 C
3 1 0.5 0.3 0.1 0.05 0.03 0.01 0.1
Ta=100 C 25 C -25 C
0.3
1
3
10
30
100
300
-0.3
-1
-3
-10
-30
-100
-300
COLLECTOR CURRENT I C (mA)
EMITTER CURRENT I E (mA)
I B - V BE
1k 300 100 30 10 3 1 0.3 0 0.2 0.4 0.6 0.8 1.0 1.2 BASE-EMITTER VOLTAGE V BE (V)
Ta=2 5C Ta=25 C Ta=1 00 C
Pc - Ta
COLLECTOR POWER DISSIPATION PC (mW) 700 600 500 400 300 200 100 0 0 25 50 75 100 125 150 175
3k BASE CURRENT I B (A)
COMMON EMITTER VCE =6V
AMBIENT TEMPERATURE Ta ( C)
2001. 9. 14
Revision No : 2
2/2

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