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| SMT850N Specifications 1) Product Name 2) Type No. 3) Chip (1) Chip Material (2) Chip Dimension (3) Peak Wavelength 4) Package (1) Lead Frame Die (2) Package Resin (3) Lens High Performance Infrared TOP IR LED SMT850N consists of an AlGaAs LED mounted on the lead frame as TOP LED package and is 20mW typical of output power. It emits a spectral band of radiation at 850nm. Outer dimension (Unit: mm) TOP IR LED SMT850N AlGaAs 0.4mm*0.4mm 850nm typ. Silver Plated PPA Resin Epoxy Resin Electro-Optical Characteristics [Ta=25C] Item Symbol Maximum Rated Value Unit Ambient Temperature Power Dissipation PD 160 mW Ta=25C Forward Current IF 100 mA Ta=25C Pulse Forward Current IFP 1,000 mA Ta=25C Reverse Voltage VR 5 V Ta=25C Operating Temperature TOPR -20 ~ +80 C -30 ~ +80 C Storage Temperature TSTG Soldering Temperature TSOL 240 C Pulse Forward Current condition: Duty=1% and Pulse Width=10us. Soldering condition: Soldering condition must be completed within 3 seconds at 230C Electro-Optical Characteristics [Ta=25C] Item Symbol Condition Minimum IF=50mA DC Forward Voltage VF IF=100mA, tp=20ms Reverse Current IR VR=5V IF=50mA DC 15.0 Total Radiated Power PO IF=100mA, tp=20ms IF=50mA DC Radiant Intensity IE IF=100mA, tp=20ms Peak Wavelength 840 IF=50mA DC P Half Width IF=50mA DC Viewing Half Angle IF=50mA DC 1/2 Rise Time tr IF=50mA DC Fall Time tf IF=50mA DC Total Radiated Power is measured by Photodyne #500 Radiant Intensity is measured by Tektronix J-6512. Marubeni America Corporation 3945 Freedom Circle, Suite 1000, Santa Clara, CA 95054 408-330-0650 (Ext. 323), 408-330-0655 (Fax), sales@tech-led.com Typical 1.45 1.50 20.0 40.0 10 20 850 40 55 15 10 Maximum 1.60 1.8 10 Unit V uA mW mW/sr 860 nm nm deg. ns ns |
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