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STTA3006P/PI STTA6006TV1/2
TURBOSWITCH TM ULTRA-FAST HIGH VOLTAGE DIODE
MAIN PRODUCT CHARACTERISTICS IF(AV) VRRM trr (typ) VF (max) FEATURES AND BENEFITS SPECIFICTO"FREEWHEELMODE"OPERATIONS: FREEWHEEL OR BOOSTER DIODE ULTRA-FAST AND SOFT RECOVERY VERY LOW OVERALL POWER LOSSES IN BOTH THE DIODE AND THE COMPANION TRANSISTOR HIGH FREQUENCY OPERATIONS INSULATED PACKAGE : ISOTOP & DOP3I Electrical insulation : 2500VRMS Capacitance < 12 pF (DOP3I) Capacitance < 45 pF (ISOTOP) DESCRIPTION The TURBOSWITCH is a very high performance series of ultra-fast high voltage power diodes from 600V to 1200V. TURBOSWITCH family, drastically cuts losses in both the diode and the associated switching IGBT or MOSFET in all "freewheel mode" operations and is particularly suitable and efficient in motor control freewheel applications and in boosterdiode applications in power factor control circuitries. Packaged either in ISOTOP, DOP3I or SOD93 these 600V devices are particularly intended for use on 240V domestic mains. ABSOLUTE RATINGS (limiting values, per diode) Symbol VRRM VRSM IF(RMS) IFRM IFSM Tj T stg Parameter Repetitive peak reverse voltage Non repetitive peak reverse voltage RMS forward current Repetitive peak forward current Surge non repetitive forward current Storage temperature range tp=5s F=5kHz square tp=10 ms sinusoidal Value 600 600 50 300 230 150 -65 to 150 Unit V V A A A C C
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K
30A / 2 x 30A 600V 35ns 1.5V
K2
A2
A2
K1
K1
A1
K2
A1
STTA6006TV1
STTA6006TV2
ISOTOPTM
A K
K
A
SOD93 STTA3006P
DOP3I STTA3006PI
Maximum operating junction temperature
TM : TURBOSWITCH is a trademark of STMicroelectronics
November 1999 - Ed: 4C
STTA6006TV1/2/ STTA3006P/PI
THERMAL AND POWER DATA (Per diode) Symbol Rth(j-c) Parameter Junction to case thermal resistance Test conditions ISOTOP DOP3I SOD93 Rth(c) P1 Conduction power dissipation IF(AV) = 30A =0.5 Total power dissipation Pmax = P1 + P3 (P3 = 10% P1) ISOTOP ISOTOP DOP3I SOD93 Pmax ISOTOP DOP3I SOD93 Coupling Tc= 74C Tc= 52C Tc= 85C Tc= 66C Tc= 42C Tc= 78C 60 W Per diode Total Value 1.4 0.75 1.8 1.2 0.1 54 C/W W Unit C/W
STATIC ELECTRICAL CHARACTERISTICS Symbol VF * IR
**
Parameter Forward voltage drop Reverse leakage current Threshold voltage Dynamic resistance
* tp = 380 s, < 2% ** tp = 5 ms, < 2%
Test conditions IF =30A VR =0.8 x VRRM Ip < 3.IAV Tj = 25C Tj = 125C Tj = 25C Tj = 125C Tj = 125C
Min
Typ 1.25 3
Max 1.75 1.5 150 8 1.15 11
Unit V V A mA V m
Vto rd
Test pulses :
To evaluate the maximum conduction losses use the following equation : P = Vto x IF(AV) + rd x IF2(RMS)
DYNAMIC ELECTRICAL CHARACTERISTICS TURN-OFF SWITCHING Symbol trr Parameter Reverse recovery time Maximum reverse recovery current Softness factor Test conditions Tj = 25C Irr = 0.25A IF = 0.5 A IR = 1A IF = 1 A dIF/dt =-50A/s VR =30V Tj = 125C VR = 400V dIF/dt = -240 A/s dIF/dt = -500 A/s Tj = 125C VR = 400V dIF/dt = -500 A/s IF =30A 19 20 IF =30A 0.40 Min Typ 35 65 A Max Unit ns
IRM
S factor
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STTA6006TV1/2 / STTA3006P/PI
TURN-ON SWITCHING Symbol t fr Parameter Forward recovery time Test conditions Tj = 25C IF =30A, dIF/dt = 240 A/s measured at, 1.1 x VFmax Min Typ Max 600 V 12 Unit ns
VFp
Peak forward voltage Tj = 25C IF =30A, dIF/dt = 240 A/s
Fig. 1: Conduction losses versus average current.
P1(W) 60
Fig. 2: Forward voltage drop versus forward current.
VFM(V) 3.50
T
50 40 30
=0.1
MAXIMUM VALUES
3.00 2.50 2.00
=1
=tp/T
tp
Tj=125 oC
1.50 1.00
20 10 0 0 2 4 6
= 0. 2
=0.5
0.50
IF(av)(A) 8 10 12 14 16 18 20 22 24 26 28 30
IFM(A)
0.00 0.1
1
10
100
Fig. 3: Relative variation of thermal transient impedance junction to case versus pulse duration.
Fig. 4: Peak reverse recovery current versus dIF/dt.
IRM(A) 45 40 35 30 25 20 15 10 5 0 0
dIF/dt(A/ s)
I F=15A I F= 30A 90% CONFIDENCE Tj=125oC
VR=400V
IF=60A
100 200 300 400 500 600 700 800 900 1000
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STTA6006TV1/2/ STTA3006P/PI
Fig. 5: Reverse recovery time versus dIF/dt.
trr(ns) 250 90% CONFIDENCE Tj=125 oC 225 VR= 400V 200 175 I F=60A 150 IF=30A 125 100 75 IF=15A 50 25 dIF/dt( A/ s) 0 0 100 200 300 400 500 600 700 800 900 1000
Fig. 6: Softness factor (tb/ta) versus dIF/dt.
S factor 0.90 Typical values Tj=125 oC 0.85 0.80 IF<2xI F( av) 0.75 VR=400V 0.70 0.65 0.60 0.55 0.50 0.45 0.40 0.35 0.30 0.25 dIF/dt(A/ s) 0.20 0 100 200 300 400 500 600 700 800 900 1000
Fig. 7: Relative variation of dynamic parameters versus junction temperature (reference Tj=125C).
3.25 3.00 2.75 2.50 2.25 2.00 1.75 1.50 1.25 1.00 0.75 0.50 0
Fig. 8: Transient peak forward voltage versus dIF/dt.
VFP(V) 16 15 90% CONFIDENCE Tj=125 oC 14 IF=IF(av) 13 12 11 10 9 8 7 6 5 4 3 2 1 dIF/dt(A/ s) 0 0 100 200 300 400
S factor
IRM
Tj(oC) 25 50 75 100 125 150
500
600
Fig. 9: Forward recovery time versus dIF/dt.
tfr(ns) 600 550 500 450 400 350 300 250 200 150 100 50 0 0 100
90% CONFIDENCE Tj=125oC
VFr=1.1*VF max. IF =IF (av)
dIF/dt(A/ s)
200
300
400
500
600
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STTA6006TV1/2 / STTA3006P/PI
APPLICATION DATA The TURBOSWITCH is especially designed to provide the lowest overall power losses in any "FREEWHEEL Mode" application (Fig.A) considering both the diode and the companion transistor, thus optimizing the overall performance in the end application. The way of calculating the power losses is given below:
TOTAL LOSSES due to the diode P = P1+ P2+ P3+ P4+ P5 Watts
CONDUCTION LOSSES in the diode
REVERSE LOSSES in the diode
SWITCHING LOSSES in the diode
SWITCHING LOSSES in the tansistor due to the diode
Fig. A : "FREEWHEEL" MODE.
SWITCHING TRANSISTOR
DIODE: TURBOSWITCH
IL
VR
t T F = 1/T = t/T
LOAD
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STTA6006TV1/2/ STTA3006P/PI
APPLICATION DATA (Cont'd) Fig. B: STATIC CHARACTERISTICS
I IF Rd VR V IR V tO VF
Conduction losses : P1 = Vt0 . IF(AV) + Rd . IF2(RMS)
Reverse losses : P2 = VR . IR . (1 - )
Fig. C: TURN-OFF CHARACTERISTICS
V IL TRANSISTOR I t
Turn-on losses : (in the transistor, due to the diode) P5 =
VR x IRM 2 x ( 3 + 2 x S ) x F 6 x dIF dt VR x IRM x IL x ( S + 2 ) x F + 2 x dIF dt
I dI F /dt V I RM ta tb t dIR /dt VR trr = ta + tb S = tb / ta DIODE
Turn-off losses (in the diode) : P3 =
VR x IRM 2 x S x F 6 x dIF dt
P3 and P5 are suitable for power MOSFET and IGBT
Fig. D: TURN-ON CHARACTERISTICS
IF dI F /dt I Fmax
0 VF V Fp
t
Turn-on losses : P4 = 0.4 (VFP - VF) . IFmax . tfr . F
1.1V F 0 tfr
VF t
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STTA6006TV1/2 / STTA3006P/PI
PACKAGE MECHANICAL DATA ISOTOP DIMENSIONS REF. A A1 B C C2 D Millimeters Inches Min. Typ. Max. Min. Typ. Max. 11.80 8.90 7.8 0.75 1.95 37.80 12.20 0.465 9.10 0.350 8.20 0.307 0.85 0.030 2.05 0.077 38.20 1.488 31.70 1.240 25.50 0.990 24.15 0.939 24.80 15.10 0.587 12.80 0.496 4.30 0.138 4.30 0.161 5.00 0.181 4.30 0.157 4.40 0.157 30.30 1.185 0.976 0.594 0.504 0.169 0.169 0.197 0.69 0.173 1.193 0.480 0.358 0.323 0.033 0.081 1.504 1.248 1.004 0.951
D1 31.50 E 25.15 E1 23.85 E2 G 14.90 G1 12.60 G2 F F1 P P1 S Cooling method : by conduction (C) 3.50 4.10 4.60 4.00 4.00 30.10
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STTA6006TV1/2/ STTA3006P/PI
PACKAGE MECHANICAL DATA SOD93 DIMENSIONS REF. A C D D1 E F F3 G H L L2 L3 L5 L6 O 3.95 31.00 4.00 4.10 0.157 18.0 4.15 0.156 1.220 0.161 10.80 14.70 0.50 1.10 1.75 11.10 0.425 15.20 0.578 12.20 16.20 0.709 0.163 Millimeters Inches Min. Typ. Max. Min. Typ. Max. 4.70 1.17 2.50 1.27 0.78 0.020 1.30 0.043 0.069 0.437 0.598 0.480 0.638 4.90 0.185 1.37 0.046 0.098 0.050 0.031 0.051 0.193 0.054
Cooling method : by conduction (C) Recommended torque value : 0.8 m.N Maximum torque value : 1m.N
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STTA6006TV1/2 / STTA3006P/PI
PACKAGE MECHANICAL DATA DOP3I REF. A B C D E F G H K L N P R DIMENSIONS Millimeters Inches Min. 4.4 1.45 14.35 0.5 2.7 15.8 20.4 15.1 3.4 4.08 10.8 Max. 4.6 1.55 15.60 0.7 2.9 16.5 21.1 15.5 3.65 4.17 11.3 Min. 0.173 0.057 0.565 0.020 0.106 0.622 0.815 0.594 0.134 0.161 0.425 Max. 0.181 0.061 0.614 0.028 0.114 0.650 0.831 0.610 0.144 0.164 0.444
1.20 1.40 4.60 typ.
0.047 0.055 0.181 typ.
Cooling method : by conduction (C) Recommended torque value : 0.8 m.N Maximum torque value : 1m.N Ordering type STTA6006P STTA6006PI STTA6006TV2 Marking STTA6006P STTA6006PI STTA006TV2 Package SOD93 DOP3I ISOTOP ISOTOP Weight 3.79g 4.52g 27g without screws Base qty 30 30 10 10 Delivery mode Tube Tube Tube Tube
STTA6006TV1 STTA6006TV1 Epoxy meets UL94,V0
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringementof patents or other rights of thirdparties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics (c) 1999 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com
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