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| BC327/328 BC327/328 Switching and Amplifier Applications * Suitable for AF-Driver stages and low power output stages * Complement to BC337/BC338 TO-92 1 1. Collector 2. Base 3. Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25C unless otherwise noted Symbol VCES Parameter Collector-Emitter Voltage : BC327 : BC328 Collector-Emitter Voltage : BC327 : BC328 Emitter-Base Voltage Collector Current (DC) Collector Power Dissipation Junction Temperature Storage Temperature Value -50 -30 -45 -25 -5 -800 625 150 -55 ~ 150 Units V V V V V mA mW C C VCEO VEBO IC PC TJ TSTG Electrical Characteristics Ta=25C unless otherwise noted Symbol BVCEO Parameter Collector-Emitter Breakdown Voltage : BC327 : BC328 Collector-Emitter Breakdown Voltage : BC327 : BC328 Emitter-Base Breakdown Voltage Collector Cut-off Current : BC327 : BC328 DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter On Voltage Current Gain Bandwidth Product Output Capacitance Test Condition IC= -10mA, IB=0 Min. -45 -25 IC= -0.1mA, VBE=0 -50 -30 IE= -10A, IC=0 VCE= -45V, VBE=0 VCE= -25V, VBE=0 VCE= -1V, IC= -100mA VCE= -1V, IC= -300mA IC= -500mA, IB= -50mA VCE= -1V, IC= -300mA VCE= -5V, IC= -10mA, f=20MHz VCB= -10V, IE=0, f=1MHz 100 12 100 40 -5 -2 -2 -100 -100 630 -0.7 -1.2 V V MHz pF V V V nA nA Typ. Max. Units V V BVCES BVEBO ICES hFE1 hFE2 VCE (sat) VBE (on) fT Cob hFE Classification Classification hFE1 hFE2 16 100 ~ 250 6025 160 ~ 400 10040 250 ~ 630 170- (c)2002 Fairchild Semiconductor Corporation Rev. B1, August 2002 BC327/328 Typical Characteristics -500 -20 IC[mA], COLLECTOR CURRENT IC[mA], COLLECTOR CURRENT -400 -300 mA - 5.0 A IB = - 4.5m IB = 4.0mA A IB = - 3.5m A IB = - 3.0m A IB = - 2.5m mA IB = - 2.0 IB = IB= -16 A - 80 A - 70 I= B IB= A - 60 IB= P T A - 50 IB= - 40 =6 00 mW -12 A 30A 1.5 IB = -200 mA IB = - 1.0mA IB = - 0.5mA PT = 60 0mW -8 IB = - 0A IB = - 2 -4 -100 IB = - 10A IB = 0 -0 -1 -2 -3 -4 -5 IB = 0 -10 -20 -30 -40 -50 VCE[V], COLLECTOR-EMITTER VOLTAGE VCE[V], COLLECTOR-EMITTER VOLTAGE Figure 1. Static Characteristic Figure 2. Static Characteristic 1000 VBE(sat), VCE(sat)[V], SATURATION VOLTAGE -10 PULSE VCE = - 2.0V IC = 10 IB PULSE V CE(sat) hFE, DC CURRENT GAIN 100 -1 - 1.0V 10 -0.1 V BE(sat) 1 -0.1 -1 -10 -100 -1000 -0.01 -0.1 -1 -10 -100 -1000 IC[mA], COLLECTOR CURRENT IC[mA], COLLECTOR CURRENT Figure 3. DC current Gain Figure 4. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage -1000 1000 IC[mA], COLLECTOR CURRENT VCE = -1V PULSE -100 -10 fT[MHz], GAIN-BANDWIDTH PRODUCT VCE = -5.0V 100 -1 -0.1 -0.4 10 -0.5 -0.6 -0.7 -0.8 -0.9 -1 -10 -100 VBE[V], BASE-EMITTER VOLTAGE IC[mA], COLLECTOR CURRENT Figure 5. Base-Emitter On Voltage Figure 6. Gain Bandwidth Product (c)2002 Fairchild Semiconductor Corporation Rev. B1, August 2002 BC327/328 Package Dimensions TO-92 4.58 -0.15 +0.25 0.46 14.47 0.40 0.10 4.58 0.20 1.27TYP [1.27 0.20] 3.60 0.20 1.27TYP [1.27 0.20] 0.38 -0.05 +0.10 3.86MAX 1.02 0.10 0.38 -0.05 +0.10 (R2.29) (0.25) Dimensions in Millimeters (c)2002 Fairchild Semiconductor Corporation Rev. B1, August 2002 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM FACTTM ActiveArrayTM FACT Quiet seriesTM BottomlessTM FAST(R) FASTrTM CoolFETTM CROSSVOLTTM FRFETTM GlobalOptoisolatorTM DOMETM EcoSPARKTM GTOTM E2CMOSTM HiSeCTM EnSignaTM I2CTM Across the board. Around the world.TM The Power FranchiseTM Programmable Active DroopTM DISCLAIMER ImpliedDisconnectTM ISOPLANARTM LittleFETTM MicroFETTM MicroPakTM MICROWIRETM MSXTM MSXProTM OCXTM OCXProTM OPTOLOGIC(R) OPTOPLANARTM PACMANTM POPTM Power247TM PowerTrench(R) QFETTM QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM RapidConnectTM SILENT SWITCHER(R) SMART STARTTM SPMTM StealthTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogicTM TruTranslationTM UHCTM UltraFET(R) VCXTM FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Preliminary No Identification Needed Full Production Obsolete Not In Production (c)2002 Fairchild Semiconductor Corporation Rev. I1 |
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