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| BSS 124 SIPMOS (R) Small-Signal Transistor * N channel * Enhancement mode * VGS(th) = 1.5 ...2.5 V Pin 1 G Type BSS 124 Type BSS 124 Pin 2 D Marking SS 124 Pin 3 S VDS 400 V ID 0.12 A RDS(on) 28 Package TO-92 Ordering Code Q67000-S172 Tape and Reel Information E6288 Maximum Ratings Parameter Drain source voltage Drain-gate voltage Symbol Values 400 400 Unit V VDS V DGR RGS = 20 k Gate source voltage Gate-source peak voltage,aperiodic Continuous drain current VGS Vgs ID 14 20 A 0.12 TA = 37 C DC drain current, pulsed IDpuls 0.48 TA = 25 C Power dissipation Ptot 1 W TA = 25 C Semiconductor Group 1 12/05/1997 BSS 124 Maximum Ratings Parameter Chip or operating temperature Storage temperature Thermal resistance, chip to ambient air 1) DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Symbol Values -55 ... + 150 -55 ... + 150 125 E 55 / 150 / 56 K/W Unit C Tj Tstg RthJA Electrical Characteristics, at Tj = 25C, unless otherwise specified Parameter Symbol min. Static Characteristics Drain- source breakdown voltage Values typ. max. Unit V(BR)DSS 400 2 0.1 8 10 16 2.5 V VGS = 0 V, ID = 0.25 mA, Tj = 25 C Gate threshold voltage VGS(th) 1.5 VGS=VDS, ID = 1 mA Zero gate voltage drain current IDSS 1 50 A VDS = 400 V, VGS = 0 V, Tj = 25 C VDS = 400 V, VGS = 0 V, Tj = 125 C Gate-source leakage current IGSS 100 nA 28 VGS = 20 V, VDS = 0 V Drain-Source on-state resistance RDS(on) VGS = 10 V, ID = 0.12 A Semiconductor Group 2 12/05/1997 BSS 124 Electrical Characteristics, at Tj = 25C, unless otherwise specified Parameter Symbol min. Dynamic Characteristics Transconductance Values typ. max. Unit gfs 0.1 0.19 90 10 4 - S pF 120 15 6 ns 5 8 VDS 2 * ID * RDS(on)max, ID = 0.12 A Input capacitance Ciss Coss - VGS = 0 V, VDS = 25 V, f = 1 MHz Output capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz Reverse transfer capacitance Crss - VGS = 0 V, VDS = 25 V, f = 1 MHz Turn-on delay time td(on) VDD = 30 V, VGS = 10 V, ID = 0.21 A RG = 50 Rise time tr 10 15 VDD = 30 V, VGS = 10 V, ID = 0.21 A RG = 50 Turn-off delay time td(off) 18 25 VDD = 30 V, VGS = 10 V, ID = 0.21 A RG = 50 Fall time tf 15 20 VDD = 30 V, VGS = 10 V, ID = 0.21 A RG = 50 Semiconductor Group 3 12/05/1997 BSS 124 Electrical Characteristics, at Tj = 25C, unless otherwise specified Symbol Values Parameter min. Reverse Diode Inverse diode continuous forward current IS typ. max. Unit A 0.85 0.12 0.48 V 1.3 TA = 25 C Inverse diode direct current,pulsed ISM - TA = 25 C Inverse diode forward voltage VSD VGS = 0 V, IF = 0.24 A Semiconductor Group 4 12/05/1997 BSS 124 Power dissipation Ptot = (TA) Drain current ID = (TA) parameter: VGS 10 V 0.13 A 0.11 1.2 W 1.0 Ptot 0.9 0.8 0.7 ID 0.10 0.09 0.08 0.07 0.6 0.06 0.5 0.4 0.3 0.2 0.1 0.0 0 20 40 60 80 100 120 C 160 0.05 0.04 0.03 0.02 0.01 0.00 0 20 40 60 80 100 120 C 160 TA TA Safe operating area ID=f(VDS) parameter : D = 0.01, TC=25C Drain-source breakdown voltage V(BR)DSS = (Tj) 480 V 460 V(BR)DSS 450 440 430 420 410 400 390 380 370 360 -60 -20 20 60 100 C 160 Tj Semiconductor Group 5 12/05/1997 BSS 124 Typ. output characteristics ID = (VDS) parameter: tp = 80 s , Tj = 25 C 0.28 A 0.24 Typ. drain-source on-resistance RDS (on) = (ID) parameter: tp = 80 s, Tj = 25 C 90 Ptot = 1W lh ji k gf e d VGS [V] a 2.5 b 3.0 3.5 4.0 4.5 5.0 5.5 6.0 7.0 8.0 9.0 10.0 c a b ID 0.22 0.20 0.18 0.16 0.14 0.12 0.10 RDS (on) 70 60 50 40 30 20 10 VGS [V] = a 2.5 3.0 b 3.5 c 4.0 d 4.5 e f 5.0 5.5 g 6.0 h i 7.0 8.0 j 9.0 k 10.0 c d e f g h i b j k l 0.08 0.06 0.04 0.02 0.00 0 a c d ef g ih kj 2 4 6 8 10 V 14 0 0.00 0.04 0.08 0.12 0.16 0.20 A 0.26 VDS ID Typ. transfer characteristics ID = f(VGS) parameter: tp = 80 s VDS 2 x ID x RDS(on)max 0.32 Typ. forward transconductance gfs = f (ID) parameter: tp = 80 s, VDS2 x ID x RDS(on)max 0.30 A S ID 0.24 gfs 0.20 0.20 0.16 0.15 0.12 0.10 0.08 0.05 0.04 0.00 0 0.00 0.00 1 2 3 4 5 6 7 8 V 10 0.05 0.10 0.15 A 0.25 VGS ID Semiconductor Group 6 12/05/1997 BSS 124 Drain-source on-resistance RDS (on) = (Tj) parameter: ID = 0.12 A, VGS = 10 V 70 Gate threshold voltage VGS (th) = (Tj) parameter: VGS = VDS, ID = 1 mA 4.6 V 4.0 60 RDS (on) 55 50 45 40 35 30 25 20 15 10 5 0 -60 VGS(th) 3.6 3.2 2.8 98% typ 98% 2.4 2.0 1.6 2% typ 1.2 0.8 0.4 -20 20 60 100 C 160 0.0 -60 -20 20 60 100 C 160 Tj Tj Typ. capacitances C = f (VDS) parameter:VGS=0V, f = 1 MHz 10 3 Forward characteristics of reverse diode IF = (VSD) parameter: Tj, tp = 80 s 10 0 pF C 10 2 A IF 10 -1 Ciss 10 1 Coss 10 -2 Tj = 25 C typ Tj = 150 C typ Tj = 25 C (98%) Tj = 150 C (98%) Crss 10 0 0 5 10 15 20 25 30 V VDS 40 10 -3 0.0 0.4 0.8 1.2 1.6 2.0 2.4 V 3.0 VSD Semiconductor Group 7 12/05/1997 |
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