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| H5N2008P Silicon N Channel MOS FET High Speed Power Switching REJ03G0390-0300 Rev.3.00 Nov.24.2004 Features * Low on-resistance * Low leakage current * High speed switching Outline TO-3P D G 1. Gate 2. Drain (Flange) 3. Source S 1 2 3 Absolute Maximum Ratings (Ta = 25C) Item Drain to Source voltage Gate to Source voltage Drain current Drain peak current Body-Drain diode reverse Drain current Body-Drain diode reverse Drain peak current Avalanche current Avalanche energy Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Notes: 1. PW 10 s, duty cycle 1% 2. Value at Tc = 25C 3. STch = 25C, Tch 150C Symbol VDSS VGSS ID ID (pulse)Note1 IDR IDR (pulse)Note1 IAPNote3 EARNote3 Pch Note2 ch-c Tch Tstg Ratings 200 30 96 192 96 192 48 153 150 0.833 150 -55 to +150 Unit V V A A A A A mJ W C/W C C Rev.3.00 Nov.24.2004 page 1 of 6 H5N2008P Electrical Characteristics (Ta = 25C) Item Drain to Source breakdown voltage Zero Gate voltage Drain current Gate to Source leak current Gate to Source cutoff voltage Forward transfer admittance Static Drain to Source on state resistance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total Gate charge Gate to Source charge Gate to Drain charge Body-Drain diode forward voltage Body-Drain diode reverse recovery time Body-Drain diode reverse recovery charge Notes: 4. Pulse test Symbol V(BR)DSS IDSS IGSS VGS(off) |yfs| RDS(on) Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VDF trr Qrr Min 200 -- -- 3.0 35 -- -- -- -- -- -- -- -- -- -- -- -- -- -- Typ -- -- -- -- 58 0.020 4900 850 95 60 370 220 270 98 25 44 1.1 180 1.5 Max -- 1 0.1 4.5 -- 0.023 -- -- -- -- -- -- -- -- -- -- 1.7 -- -- Unit V A A V S pF pF pF ns ns ns ns nC nC nC V ns C Test conditions ID = 10 mA, VGS = 0 VDS = 200 V, VGS = 0 VGS = 30 V, VDS = 0 VDS = 10 V, ID = 1 mA ID = 48 A, VDS = 10 V Note4 ID = 48 A, VGS = 10 VNote4 VDS = 25 V VGS = 0 f = 1 MHz ID = 48 A VGS = 10 V RL = 2.1 Rg = 10 VDD = 160 V VGS = 10 V ID = 96 A IF = 96 A, VGS = 0 Note4 IF = 96 A, VGS = 0 diF/dt = 100 A/s Rev.3.00 Nov.24.2004 page 2 of 6 H5N2008P Main Characteristics Power vs. Temperature Derating 200 Pch (W) 1000 300 ID (A) Maximum Safe Operation Area 10 s 1 m 100 s s 1s ho t) 100 30 PW 150 =1 0m s( Channel Dissipation Drain Current 10 Operation in this area is 3 limited by RDS(on) 100 1 0.3 0.1 0.03 0.01 Ta = 25C 1 100 300 1000 30 3 10 Drain to Source Voltage VDS (V) Typical Transfer Characteristics 100 VDS = 10 V Pulse Test 80 ID (A) 50 DC Operation (Tc = 25C) 0 50 100 150 Tc (C) 200 Case Temperature Typical Output Characteristics 100 10 V 7V 6.5 V ID (A) 80 6V 60 60 Drain Current 40 Drain Current 5.5 V 40 20 VGS = 5 V Pulse Test 20 Tc = 75C 25C -25C 8 10 VGS (V) 0 4 8 12 Drain to Source Voltage 16 20 VDS (V) 0 2 4 6 Gate to Source Voltage Drain to Source Saturation Voltage vs. Gate to Source Voltage 8 Drain to Source Saturation Voltage VDS(on) (V) Drain to Source on State Resistance RDS(on) () Pulse Test Static Drain to Source on State Resistance vs. Drain Current 0.1 VGS = 10 V, 15 V 0.05 6 0.02 0.01 4 0.005 2 ID = 96 A 48 A 20 A 0.002 0.001 1 3 Pulse Test 10 30 100 300 Drain Current ID (A) 1000 0 12 4 8 Gate to Source Voltage 16 20 VGS (V) Rev.3.00 Nov.24.2004 page 3 of 6 H5N2008P Static Drain to Source on State Resistance vs. Temperature 0.1 VGS = 10 V Pulse Test 0.08 Forward Transfer Admittance vs. Drain Current Static Drain to Source on State Resistance RDS(on) () Forward Transfer Admittance |yfs| (S) 1000 300 100 30 10 3 1 1 75C 25C Tc = -25C 0.06 ID = 96 A 48 A 0.04 20 A 0.02 0 -25 VDS = 10 V Pulse Test 3 10 30 100 ID (A) 300 1000 0 25 50 75 100 125 150 Tc (C) Case Temperature Drain Current 1000 Body-Drain Diode Reverse Recovery Time 100000 30000 Typical Capacitance vs. Drain to Source Voltage VGS = 0 f = 1 MHz Ciss Reverse Recovery Time trr (ns) 500 Capacitance C (pF) 200 100 50 20 10 5 2 1 0.1 di / dt = 100 A / s VGS = 0, Ta = 25C 0.3 1 3 10 30 100 Reverse Drain Current IDR (A) Dynamic Input Characteristics 400 16 VDD = 50 V 100 V 160 V 10000 3000 1000 300 100 30 10 Coss Crss 0 50 100 150 Drain to Source Voltage VDS (V) Switching Characteristics VGS = 10 V, VDD = 100 V PW = 5 s, duty < 1 % Rg = 10 10000 VDS (V) VGS (V) ID = 96 A 300 VGS 12 Switching Time t (ns) Drain to Source Voltage Gate to Source Voltage 1000 tf td(off) tr 200 VDS 8 100 tr 10 0.1 0.3 tf td(on) 100 VDD = 160 V 100 V 50 V 40 80 120 160 4 0 0 200 Gate Charge Qg (nC) 1 3 Drain Current 10 30 ID (A) 100 Rev.3.00 Nov.24.2004 page 4 of 6 H5N2008P Reverse Drain Current vs. Source to Drain Voltage 100 IDR (A) Gate to Source Cutoff Voltage VGS(off) (V) Gate to Source Cutoff Voltage vs. Case Temperature 5 VDS = 10 V ID = 10 mA 4 1 mA 80 60 Reverse Drain Current 3 0.1 mA 2 40 10 V 5V VGS = 0 V 20 Pulse Test 0 0.4 0.8 1.2 1.6 VSD (V) 2.0 Source to Drain Voltage 1 0 -25 0 25 50 75 100 125 150 Tc (C) Case Temperature Normalized Transient Thermal Impedance vs. Pulse Width Normalized Transient Thermal Impedance s (t) 3 Tc = 25C 1 D=1 0.5 0.3 0.2 0.1 0.1 0.05 ch - c(t) = s (t) * ch - c ch - c = 0.833C/W, Tc = 25C PDM D= PW T 0.03 0.02 1 0.0 1s PW T h p ot uls e 0.01 10 100 1m 10 m 100 m Pulse Width PW (s) 1 10 Switching Time Test Circuit Vin Monitor D.U.T. RL 10 Vin 10 V V DD = 100 V Vin Vout 10% 10% Vout Monitor Waveform 90% 10% 90% td(off) tf 90% td(on) tr Rev.3.00 Nov.24.2004 page 5 of 6 H5N2008P Package Dimensions As of January, 2003 5.0 0.3 15.6 0.3 1.0 3.2 0.2 4.8 0.2 1.5 Unit: mm 0.5 14.9 0.2 19.9 0.2 1.6 1.4 Max 2.0 2.8 18.0 0.5 1.0 0.2 2.0 0.6 0.2 3.6 0.9 1.0 5.45 0.5 5.45 0.5 Package Code JEDEC JEITA Mass (reference value) TO-3P -- Conforms 5.0 g Ordering Information Part Name H5N2008P-E Quantity 30 pcs Plastic magazine Shipping Container Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.3.00 Nov.24.2004 page 6 of 6 0.3 |
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