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| PD - 91265H PRELIMINARY l l l l l l l IRF7501 HEXFET(R) Power MOSFET 8 7 Generation V Technology Ulrtra Low On-Resistance Dual N-Channel MOSFET Very Small SOIC Package Low Profile (<1.1mm) Available in Tape & Reel Fast Switching S1 G1 S2 G2 1 D1 D1 D2 D2 2 VDSS =20V 3 6 4 5 RDS(on) = 0.135 T o p V ie w Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The new Micro8 package, with half the footprint area of the standard SO-8, provides the smallest footprint available in an SOIC outline. This makes the Micro8 an ideal device for applications where printed circuit board space is at a premium. The low profile (<1.1mm) of the Micro8 will allow it to fit easily into extremely thin application environments such as portable electronics and PCMCIA cards. M icro 8 Absolute Maximum Ratings Parameter VDS ID @ TA = 25C ID @ TA = 70C IDM PD @TA = 25C PD @TA = 70C VGSM VGS dv/dt TJ , TSTG Drain-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Maximum Power Dissipation Maximum Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse tp<10s Gate-to-Source Voltage Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Max. 20 2.4 1.9 19 1.25 0.8 0.01 16 12 5.0 -55 to + 150 240 (1.6mm from case) Units V A W W W/C V V V/ns C Thermal Resistance Parameter RJA Maximum Junction-to-Ambient Max. 100 Units C/W All Micro8 Data Sheets reflect improved Thermal Resistance, Power and Current -Handling Ratings- effective only for product marked with Date Code 505 or later . www.irf.com 1 4/30/98 IRF7501 Electrical Characteristics @ TJ = 25C (unless otherwise specified) Parameter Drain-to-Source Breakdown Voltage V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient V(BR)DSS RDS(on) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. 20 --- --- --- 0.70 2.6 --- --- --- --- --- --- --- --- --- --- --- --- --- --- Typ. Max. Units Conditions --- --- V VGS = 0V, ID = 250A 0.041 --- V/C Reference to 25C, ID = 1mA 0.085 0.135 VGS = 4.5V, ID = 1.7A 0.120 0.20 VGS = 2.7V, ID = 0.85A --- --- V VDS = VGS, ID = 250A --- --- S VDS = 10V, ID = 0.85A --- 1.0 VDS = 16V, VGS = 0V A --- 25 VDS = 16V, VGS = 0V, TJ = 125C --- 100 VGS = 12V nA --- -100 VGS = -12V 5.3 8.0 ID = 1.7A 0.84 1.3 nC VDS = 16V 2.2 3.3 VGS = 4.5V, See Fig. 9 5.7 --- VDD = 10V 24 --- ID = 1.7A ns 15 --- RG = 6.0 16 --- RD = 5.7 260 --- VGS = 0V 130 --- pF VDS = 15V 61 --- = 1.0MHz, See Fig. 8 Source-Drain Ratings and Characteristics IS I SM VSD t rr Q rr Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Min. Typ. Max. Units --- --- --- --- --- --- --- --- 39 37 1.25 A 19 1.2 59 56 V ns nC Conditions MOSFET symbol showing the G integral reverse p-n junction diode. TJ = 25C, IS = 1.7A, VGS = 0V TJ = 25C, IF = 1.7A di/dt = 100A/s D S Notes: Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 10 ) Pulse width 300s; duty cycle 2% Surface mounted on FR-4 board, t 10sec ISD 1.7A, di/dt 66A/s, VDD V(BR)DSS, TJ 150C 2 www.irf.com IRF7501 100 I , D rain-to-S ource C urrent (A ) D I , D rain-to-S ource C urrent (A ) D 10 VGS 7.5V 5.0V 4.0V 3.5V 3.0V 2.5V 2.0V BOTTOM 1.5V TOP 100 10 VGS 7.5V 5.0V 4.0V 3.5V 3.0V 2.5V 2.0V BOTTOM 1.5V TOP 1 1 1.5V 0.1 0.1 0.01 0.1 1 1.5V 20 s P U LS E W ID TH TJ = 25C A 10 0.01 0.1 1 20 s P U LS E W ID TH TJ = 150C A 10 V D S , D rain-to-Source V oltage (V) V D S , D rain-to-S ource V oltage (V ) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 100 100 I D , D ra in -to-S o urc e C urren t (A ) 10 I S D , R everse D rain C urrent (A ) 10 T J = 1 5 0 C T J = 2 5 C T J = 150C 1 1 T J = 25C 0.1 1.5 2.0 2.5 VDS = 10V 2 0 s P U L S E W ID T H 3.0 3.5 4.0 A 0.1 0.4 V G S = 0V 0.6 0.8 1.0 1.2 1.4 1.6 A 1.8 V G S , G a te -to -S o u rc e V o lta g e (V ) V S D , S ource-to-D rain V oltage (V ) Fig 3. Typical Transfer Characteristics Fig 7. Typical Source-Drain Diode Forward Voltage www.irf.com 3 IRF7501 2.0 R D S (on ) , D rain-to -S ource O n R esistance (N orm alized) 1.5 RDS(on), Drain-to-Source On Resistance ( ) I D = 1.7A 0.8 0.6 1.0 0.4 V 0.2 GS = 2.5 V 0.5 0.0 -60 -40 -20 0 20 40 60 80 V G S = 4.5 V 100 120 140 160 0.0 V G S = 5 .0 V 0 2 4 6 A A T J , Junction T em perature (C ) I D , D rain C urrent (A ) Fig 5. Normalized On-Resistance Vs. Temperature Fig 6. Typical On-Resistance Vs. Drain Current R D S (o n ) , D ra in-to -S o urc e O n R esistan ce ( ) ( 0.13 0.11 0.09 I D = 2.4 A 0.07 0.05 2 3 4 5 6 7 8 A V G S , G ate -to-S o urc e V olta ge (V ) Fig 7. Typical On-Resistance Vs. Gate Voltage 4 www.irf.com IRF7501 500 -V G S , G ate-to -S ource V oltage (V ) 400 V GS C is s C rs s C oss = = = = 0V , f = 1M H z C gs + C gd , Cds S H O R TE D C gd C ds + C gd 10 I D = 1.7A V D S = 16V 8 C , C apacitanc e (pF ) C iss 300 6 C oss 200 4 C rs s 100 2 0 1 10 100 A 0 0 2 4 FO R TE S T C IR C U IT S E E FIG U R E 9 6 8 10 A V D S , D rain-to -S ource V oltage (V ) Q G , Total G ate C harge (nC ) Fig 8. Typical Capacitance Vs. Drain-to-Source Voltage Fig 9. Typical Gate Charge Vs. Gate-to-Source Voltage 1000 Thermal Response (Z thJA ) 100 D = 0.50 0.20 10 0.10 0.05 0.02 0.01 1 SINGLE PULSE (THERMAL RESPONSE) Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = P DM x Z thJA + TA 0.01 0.1 1 10 100 P DM t1 t2 0.1 0.00001 0.0001 0.001 t1 , Rectangular Pulse Duration (sec) Fig 10. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com 5 IRF7501 Micro8 Package Outline L E A D A S S IG N M E N T S D -B3 DDDD 8765 3 E -A1234 SSSG S1 G 1 S2 G 2 8765 H 0.2 5 (.0 1 0) M A M S IN G LE 1234 D U AL 1234 D1 D1 D2 D2 8765 D IM IN C H E S M IN MAX M IL L IM E T E R S M IN M AX A A1 B C D e e1 E H L .0 3 6 .0 0 4 .0 1 0 .0 0 5 .1 1 6 .0 4 4 .0 0 8 .0 1 4 .0 0 7 .1 2 0 0 .9 1 0 .1 0 0 .2 5 0 .1 3 2 .9 5 1 .1 1 0 .2 0 0 .3 6 0 .1 8 3 .0 5 .0 2 5 6 B A SIC .0 1 2 8 B A SIC .1 1 6 .1 8 8 .0 1 6 0 .1 2 0 .1 9 8 .0 2 6 6 0 .6 5 BA S IC 0 .3 3 BA S IC 2 .9 5 4 .7 8 0 .4 1 0 3 .0 5 5 .0 3 0 .6 6 6 e 6X e1 A -CB 8X 0.0 8 (.0 0 3) M A1 C AS BS 0 .10 ( .00 4) L 8X C 8X R E C O M M E N D E D F O O T P R IN T 1 .04 ( .0 4 1 ) 8X 0 .3 8 8X ( .0 1 5 ) 3 .2 0 ( .1 2 6 ) 4.24 5 .2 8 ( .1 6 7 ) ( .2 08 ) NOTES: 1 D IM E N S IO N IN G A N D T O L E R A N C IN G P E R A N S I Y 1 4 .5 M -1 9 8 2 . 2 C O N T R O L L IN G D IM E N S IO N : IN C H . 3 D IM E N S IO N S D O N O T IN C L U D E M O L D F L A S H . 0 .65 6X ( .02 56 ) Part Marking Information IRF7501 example 6 www.irf.com IRF7501 Tape & Reel Dimensions are shown in millimeters (inches) T E R M IN A L N U M B E R 1 1 2 .3 ( .48 4 ) 1 1 .7 ( .46 1 ) 8 .1 ( .3 1 8 ) 7 .9 ( .3 1 2 ) F E E D D IR E C T IO N NOTES: 1 . O U T L IN E C O N F O R M S T O E IA -4 8 1 & E IA -5 4 1 . 2 . C O N T R O L L IN G D IM E N S IO N : M IL L IM E T E R . 3 3 0 .0 0 (12 .9 9 2 ) MAX. 1 4 .4 0 ( .5 66 ) 1 2 .4 0 ( .4 88 ) NO TES : 1. C O N T R O LL IN G D IM E N S IO N : M IL L IM E T E R . 2. O U T L IN E C O N F O R M S T O E IA -4 8 1 & E IA -5 4 1 . WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020 IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111 IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086 IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371 http://www.irf.com/ Data and specifications subject to change without notice. 4/98 www.irf.com 7 |
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