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HiPerFETTM Power MOSFETs
VDSS IXFH/IXFM21N50 IXFH/IXFM/IXFT24N50 IXFH/IXFT26N50
ID25
RDS(on)
N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family
500 V 21 A 0.25 500 V 24 A 0.23 500 V 26 A 0.20 trr 250 ns
Symbol VDSS VDGR VGS VGSM ID25 IDM IAR
Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGS = 1 M Continuous Transient TC = 25C TC = 25C, pulse width limited by TJM TC = 25C 21N50 24N50 26N50 21N50 24N50 26N50 21N50 24N50 26N50
Maximum Ratings 500 500 20 30 21 24 26 84 96 104 21 24 26 30 5 300 -55 ... +150 150 -55 ... +150 V V V V A A A A A A A A A mJ V/ns W C C C C Nm/lb.in.
TO-247 AD (IXFH)
(TAB)
TO-268 (D3) Case Style
G S TO-204 AE (IXFM) (TAB)
EAR dv/dt PD TJ TJM Tstg TL Md Weight
TC = 25C IS IDM, di/dt 100 A/s, VDD VDSS, TJ 150C, RG = 2 TC = 25C
D G = Gate, S = Source, D = Drain, TAB = Drain
G
1.6 mm (0.062 in.) from case for 10 s Mounting torque
300 1.13/10
TO-204 = 18 g, TO-247 = 6 g
Features * International standard packages * Low RDS (on) HDMOSTM process * Rugged polysilicon gate cell structure * Unclamped Inductive Switching (UIS) rated * Low package inductance - easy to drive and to protect * Fast intrinsic Rectifier Applications * DC-DC converters * Synchronous rectification * Battery chargers * Switched-mode and resonant-mode power supplies * DC choppers * AC motor control * Temperature and lighting controls * Low voltage relays Advantages * Easy to mount with 1 screw (TO-247) (isolated mounting screw hole) * High power surface mountable package * High power density
91525H (9/99)
Symbol
Test Conditions
Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 500 2 4 100 TJ = 25C TJ = 125C 200 1 V V nA A mA
VDSS VGS(th) IGSS IDSS
VGS = 0 V, ID = 250 A VDS = VGS, ID = 4 mA VGS = 20 VDC, VDS = 0 VDS = 0.8 * VDSS VGS = 0 V
(c) 1999 IXYS All rights reserved
IXFH21N50 IXFM21N50
Symbol Test Conditions (TJ = 25C, unless otherwise specified) RDS(on) VGS = 10 V, ID = 0.5 ID25 21N50 24N50 26N50 Pulse test, t 300 s, duty cycle d 2 % 11 21 4200 450 135 16 33 65 30 135 28 62 0.25 25 45 80 40 160 40 85 Characteristic Values Min. Typ. Max. 0.25 0.23 0.20 S pF pF pF ns ns ns ns nC nC nC
IXFH24N50 IXFM24N50 IXFT24N50
IXFH26N50 IXFM26N50 IXFT26N50
TO-247 AD (IXFH) Outline
1
2
3
gfs Ciss Coss Crss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCK
VDS = 10 V; ID = 0.5 ID25, pulse test VGS = 0 V, VDS = 25 V, f = 1 MHz
Terminals: 1 - Gate 2 - Drain 3 - Source Tab - Drain
Dim. A A1 A2 b b1 b2 C D E e L L1 P Q R S
Millimeter Min. Max. 4.7 2.2 2.2 1.0 1.65 2.87 .4 20.80 15.75 5.20 19.81 3.55 5.89 4.32 6.15 5.3 2.54 2.6 1.4 2.13 3.12 .8 21.46 16.26 5.72 20.32 4.50 3.65 6.40 5.49 BSC
Inches Min. Max. .185 .087 .059 .040 .065 .113 .016 .819 .610 0.205 .780 .140 0.232 .170 242 .209 .102 .098 .055 .084 .123 .031 .845 .640 0.225 .800 .177 .144 0.252 .216 BSC
VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 RG = 2 (External)
VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25
(TO-247 Case Style)
0.42 K/W K/W
Source-Drain Diode Symbol IS Test Conditions VGS = 0 V
Characteristic Values (TJ = 25C, unless otherwise specified) Min. Typ. Max. 21N50 24N50 26N50 21N50 24N50 26N50 21 24 26 84 96 104 1.5 250 400 1 2 10 15 A A A A A A V ns ns C C A A
TO-204 AE (IXFM) Outline
ISM
Repetitive; pulse width limited by TJM
VSD t rr QRM IRM
IF = IS, VGS = 0 V, Pulse test, t 300 s, duty cycle d 2 % IF = IS -di/dt = 100 A/s, VR = 100 V TJ = TJ = TJ = TJ = TJ = TJ = 25C 125C 25C 125C 25C 125C
Pins: 1 - Gate, 2 - Source, Case - Drain
Dim. A A1 b D e e1 L p p1 q R R1 s 10.67 5.21 11.18 3.84 3.84 12.58 3.33 16.64 Millimeter Min. Max. 6.4 1.53 1.45 11.4 3.42 1.60 22.22 11.17 5.71 12.19 4.19 4.19 13.33 4.77 17.14 .420 .205 .440 .151 .151 .495 .131 .655 Inches Min. Max. .250 .060 .057 .450 .135 .063 .875 .440 .225 .480 .165 .165 .525 .188 .675
Note 1: Add "S" suffix for TO-247 SMD package option (ex: IXFH24N50S)
TO-268 Outline
30.15 BSC
1.187 BSC
Min. Recommended Footprint
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025
IXFH21N50 IXFM21N50
IXFH24N50 IXFM24N50 IXFT24N50
Fig. 2 Input Admittance
IXFH26N50 IXFM26N50 IXFT26N50
Fig. 1 Output Characteristics
50 45 40 35 30 25 20 15 10 5 0
5V VGS = 10V 7V TJ = 25C 6V
50 45 40 35 30 25 20 15 10 5 0
TJ = 25C VDS = 10V
ID - Amperes
0
5
10
15
20
25
30
35
ID - Amperes
0
1
2
3
4
5
6
7
8
9
10
VDS - Volts
VGS - Volts
Fig. 3 RDS(on) vs. Drain Current
1.6
TJ = 25C
Fig. 4 Temperature Dependence of Drain to Source Resistance
2.50 2.25
1.5
RDS(on) - Normalized
RDS(on) - Normalized
1.4 1.3
VGS = 10V
2.00 1.75 1.50 1.25 1.00 0.75
ID = 12A
1.2
VGS = 15V
1.1 1.0 0.9 0 5 10 15 20 25 30 35 40 45 50
0.50 -50
-25
0
25
50
75
100 125 150
ID - Amperes
TJ - Degrees C
Fig. 5 Drain Current vs. Case Temperature
30
26N50 24N50
Fig. 6 Temperature Dependence of Breakdown and Threshold Voltage
1.2
VGS(th)
BV/VG(th) - Normalized
25
1.1 1.0 0.9 0.8 0.7 0.6 -25 0 25 50 75 100 125 150 0.5 -50 -25 0 25 50 75
21N50
BVDSS
ID - Amperes
20 15 10 5 0 -50
100 125 150
TC - Degrees C
TJ - Degrees C
(c) 1999 IXYS All rights reserved
IXFH21N50 IXFM21N50
IXFH24N50 IXFM24N50 IXFT24N50
IXFH26N50 IXFM26N50 IXFT26N50
Fig.7
Gate Charge Characteristic Curve
Fig.8 Forward Bias Safe Operating Area
10 9 8 7
VDS = 250V ID = 12.5A IG = 10mA
100
Limited by RDS(on)
10s 100s
ID - Amperes
VGE - Volts
6 5 4 3 2 1 0 0 25 50 75 100 125 150 175 200
10
1ms
10ms
1
100ms
0.1 1 10 100
500
Gate Charge - nCoulombs
VDS - Volts
Fig.9
Capacitance Curves
Fig.10 Source Current vs. Source to Drain Voltage
4500 4000 3500 3000 2500 2000 1500 1000 500 0 0 5 10 15 20
f = 1 Mhz VDS = 25V
50
Ciss
45 40 35 30 25 20 15 10 5 0 0.00
TJ = 125C TJ = 25C
Capacitance - pF
Coss Crss
25
ID - Amperes
0.25
0.50
0.75
1.00
1.25
1.50
VDS - Volts
VSD - Volt
Fig.11 Transient Thermal Impedance
1
Thermal Response - K/W
D=0.5
0.1
D=0.2 D=0.1 D=0.05
0.01 D=0.02
D=0.01 Single pulse
0.001 0.00001
0.0001
0.001
0.01
0.1
1
10
Time - Seconds
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025

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