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HiPerFETTM Power MOSFETs
Q-Class
N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt
VDSS IXFH/IXFT 24N50Q IXFH/IXFT 26N50Q
ID25
RDS(on) 0.23 0.20
500 V 24 A 500 V 26 A trr 250 ns
Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight
Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGS = 1 M Continuous Transient TC = 25C TC = 25C, Note 1 TC = 25C TC = 25C TC = 25C IS IDM, di/dt 100 A/s, VDD VDSS, TJ 150C, RG = 2 TC = 25C 24N50 26N50 24N50 26N50 24N50 26N50
Maximum Ratings 500 500 20 30 24 26 96 104 24 26 30 1.5 5 300 -55 ... +150 150 -55 ... +150 V V V V A A A A A A mJ J V/ns W C C C C Nm/lb.in. g g
TO-247 AD (IXFH)
(TAB)
TO-268 (D3) (IXFT) Case Style
G S
(TAB)
G = Gate, S = Source,
D = Drain, TAB = Drain
Features
l l l l
1.6 mm (0.063 in) from case for 10 s Mounting torque TO-247 TO-268 Test Conditions
300 1.13/10 6 4
IXYS advanced low Qg process International standard packages Low RDS (on)
Symbol
Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 500 2.5 4.5 100 TJ = 25C TJ = 125C 24N50Q 26N50Q 25 1 0.23 0.20 V V nA A mA
Unclamped Inductive Switching (UIS) rated l Fast switching
l
VDSS VGS(th) IGSS IDSS RDS(on)
VGS = 0 V, ID = 250 A V DS = VGS, ID = 4 mA VGS = 20 VDC, VDS = 0 VDS = VDSS VGS = 0 V V GS = 10 V, ID = 0.5 ID25 Note 2
Molding epoxies meet UL 94 V-0 flammability classification
Advantages
l l l
Easy to mount Space savings High power density
(c) 2001 IXYS All rights reserved
98512G (5/01)
IXFH 24N50Q IXFH 26N50Q
Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 14 24 3900 VGS = 0 V, VDS = 25 V, f = 1 MHz 500 130 28 VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 RG = 2 (External), 30 55 16 95 VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 27 40 0.42 (TO-247) 0.25 S pF pF pF ns ns ns ns nC nC nC K/W K/W
Dim.
1 2 3
IXFT 24N50Q IXFT 26N50Q
TO-247 AD Outline
gfs Ciss Coss Crss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCK
V DS = 10 V; ID = 0.5 ID25, Note 2
Terminals: 1 - Gate 2 - Drain 3 - Source Tab - Drain
Source-Drain Diode Symbol IS ISM VSD t rr QRM IRM Test Conditions V GS = 0 V Repetitive; Note1
Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 24N50Q 26N50Q 24N50Q 26N50Q 24 26 96 104 1.3 A A A A V
Millimeter Min. Max. A 4.7 5.3 A1 2.2 2.54 2.2 2.6 A2 b 1.0 1.4 1.65 2.13 b1 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC
Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC
TO-268 Outline
IF = IS, VGS = 0 V, Pulse test, t 300 s, duty cycle d 2 % IF = IS, -di/dt = 100 A/s, VR = 100 V 0.85 8
250
ns C A
Note 1. Pulse width limited by TJM 2. Pulse test, t 300 s, duty cycle d 2 %
Dim. A A1 A2 b b2 C D E E1 e H L L1 L2 L3 L4
Min Recommended Footprint
Millimeter Min. Max. 4.9 5.1 2.7 2.9 .02 .25 1.15 1.45 1.9 2.1 .4 .65 13.80 14.00 15.85 16.05 13.3 13.6 5.45 BSC 18.70 19.10 2.40 2.70 1.20 1.40 1.00 1.15 0.25 BSC 3.80 4.10
Inches Min. Max. .193 .201 .106 .114 .001 .010 .045 .057 .75 .83 .016 .026 .543 .551 .624 .632 .524 .535 .215 BSC .736 .752 .094 .106 .047 .055 .039 .045 .010 BSC .150 .161
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025
IXFH 24N50Q IXFH 26N50Q
60
TJ = 25OC
IXFT 24N50Q IXFT 26N50Q
50
VGS=10V 9V 8V 7V
50
TJ = 125OC
40
VGS=10V 9V 8V 7V 6V
ID - Amperes
ID - Amperes
40
6V
30 20 10 0 0 4 8 12 16 20
30 20 10 0
5V
5V
0
4
8
12
16
20
VDS - Volts
VDS - Volts
Fig.1 Output Characteristics @ Tj = 25C
2.8
VGS = 10V
Fig.2 Output Characteristics @ Tj = 125C
2.4
VGS = 10V
RDS(ON) - Normalized
RDS(ON) - Normalized
2.4 2.0 1.6
TJ = 25oC TJ = 125oC
2.0
ID = 26A
1.6
ID = 13A
1.2
1.2 0.8 0 10 20 30 40 50 60
0.8 25
50
75
100
125
150
ID - Amperes
TJ - Degrees C
Fig.3 RDS(on) vs. Drain Current
Fig.4 Temperature Dependence of Drain to Source Resistance
50 40
30
IXF_26N50Q
25
IXF_24N50Q
ID - Amperes
ID - Amperes
20 15 10 5 0
30
TJ = 125oC TJ = 25oC
20 10 0 0 2 4 6 8
-50
-25
0
25
50
75
100 125 150
TC - Degrees C
VGS - Volts
Fig.5 Drain Current vs. Case Temperature
Fig.6 Drain Current vs Gate Source Voltage
(c) 2001 IXYS All rights reserved
IXFH 24N50Q IXFH 26N50Q
12 10
VDS = 250 V ID = 13 A IG = 10 mA
IXFT 24N50Q IXFT 26N50Q
10000
f = 1MHz
Capacitance - pF
Ciss Coss
VGS - Volts
8 6 4 2 0 0
1000
Crss
100 20 40 60 80 100 120 0 5 10 15 20 25 30 35 40
Gate Charge - nC
VDS - Volts
Fig.7 Gate Charge Characteristic Curve
50 45 40 35
Fig.8 Capacitance Curves
ID - Amperes
30 25 20 15 10 5 0
TJ = 125OC
TJ = 25OC
0.2
0.4
0.6
0.8
1.0
1.2
1.4
VSD - Volts
Fig.9 Drain Current vs Drain to Source Voltage
1.00
D=0.5
R(th)JC - K/W
0.10
D=0.2 D=0.1 D=0.05 D=0.02
0.01
D=0.01 Single Pulse
0.00 10-5
10-4
10-3
10-2
10-1
100
101
Pulse Width - Seconds
Fig.10 Transient Thermal Impedance
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025

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