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PC3Q66Q PC3Q66Q s Features 1. High collector-emitter voltage ( VCEO : 80V) 2. Half pitch type ( lead pitch : 1.27mm ) 3. Isolation voltage between input and output ( Viso : 2 500V rms ) 4. Applicable to infrared ray reflow ( 230C for MAX. 30seconds ) 5. High reliability Mini-flat Package, High Collector-Emitter Voltage Type Half Pitch Photocoupler s Outline Dimensions 10.3 0.3 16 ( Unit : mm ) 1.27 0.25 9 Model No. Primary side mark 0.4 0.1 1 0.1 0.1 2.6 0.2 8 C0.4 Epoxy resin 0.2 0.05 4.4 0.2 5.3 0.3 s Applications 1. Programmable controllers 0.5 + 0.4 - 0.2 7.0 + 0.2 - 0.7 s Package Specifications Model No. PC3Q66Q Package specifications Taping reel diameter 330mm ( 1 000pcs. ) 6 Internal connection diagram 16 15 14 13 12 11 10 9 1 357 Anode 2468 Cathode 9 11 13 15 Emitter 10 12 14 16 1 2 3 4 5 6 7 8 Collector s Absolute Maximum Ratings Parameter Forward current *1 Peak forward current Reverse voltage Power dissipation Collector-emitter voltage Emitter-collector voltage Collector current Collector power dissipation Total power dissipation *2 Isolation voltage Operating temperature Storage temperature *3 Soldering temperature Symbol IF I FM VR P V CEO V ECO IC PC P tot V iso T opr T stg T sol ( Ta = 25C ) Rating 50 1 6 70 80 6 50 150 170 2.5 - 30 to + 100 - 40 to + 125 260 Unit mA A V mW V V mA mW mW kV rms C C C Input Output Soldering area *1 Pulse width <=100 s, Duty ratio : 0.001 *2 AC for 1 min., 40 to 60% RH, f = 60Hz *3 For 10seconds " In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that occur in equipment using any of SHARP's devices, shown in catalogs, data books, etc. Contact SHARP in order to obtain the latest version of the device specification sheets before using any SHARP's device." 0.2mm or more PC3Q66Q s Electro-optical Characteristics Parameter Forward current Reverse current Terminal capacitance Collector dark current Collector-emitter breakdown voltage Emitter-collector breakdown voltage Collector current Collector-emitter saturation voltage Isolation resistance Floating capacitance Rise time Response time Fall time Symbol VF IR Ct ICEO BV CEO BV ECO IC V CE(sat) R ISO Cf tr tf Conditions IF = 20mA VR = 4V V = 0, f = 1kH Z VCE = 20V, I F = 0 IC = 0.1mA, I F = 0 IE = 10 A, I F = 0 IF = 1mA, V CE = 5V IF = 20mA, I C = 1mA DC500V 40 to 60% RH V = 0, f = 1 MH Z VCE = 2V, I C = 2mA RL = 100 MIN. 80 6 1 5 x 1010 TYP. 1.2 30 0.1 1011 0.6 6 8 ( Ta = 25C ) MAX. 1.4 10 250 100 4 0.2 1.0 Unit V A pF nA V V mA V pF s s Input Output Transfer characteristics Fig. 1 Forward Current vs. Ambient Temperature 60 Fig. 2 Diode Power Dissipation vs. Ambient Temperature Diode power dissipation P ( mW ) 50 Forward current I F ( mA ) 100 40 80 70 60 40 30 20 10 0 - 30 20 0 - 30 0 25 5055 75 a 100 125 0 50 55 100 Ambient temperature T ( C ) Ambient temperature T a ( C ) Fig. 3 Collector Power Dissipation vs. Ambient Temperature 200 Collector power dissipation P C ( mW ) Fig. 4 Power Dissipation vs. Ambient Temperature 300 150 Power dissipation P tot ( mW ) 250 200 170 150 100 100 50 50 0 - 30 0 - 30 0 25 50 75 a 100 ( C ) 125 0 25 50 75 100 Ambient temperature T Ambient temperature T a ( C ) PC3Q66Q Fig. 5 Peak Forward Current vs. Duty Ratio 10000 5000 Peak forward current I FM ( mA ) 2000 1000 500 200 100 50 20 10 5 5 Fig. 6 Forward Current vs. Forward Voltage 100 50 Forward current I F ( mA ) 25C 50C 20 75C 10 5 - 25C Pulse width <=100 s T a = 25C 0C 2 1 0.0 10 -3 2 5 5 10 - 2 2 Duty ratio 10 -1 2 5 1 0.5 1.0 1.5 2.0 Forward voltage V F ( V ) 2.5 3.0 Fig. 7 Current Tranfer Ratio vs. Forward Current 500 VCE = 5V T a = 25C Current tranfer ratio CTR ( % ) 400 Fig. 8 Collector Current vs. Collector -emitter Voltage 50 Collector current I C ( mA ) Pc (max) I F = 30mA 20mA T a = 25C 40 10mA 30 300 200 20 5mA 100 10 1mA 0 1 10 Forward current I F 0 100 ( mA ) 0 2 4 6 8 10 Collector-emitter voltage V CE ( V ) Fig. 9 Relative Current Transfer Ratio vs. Ambient Temperature 150 I F = 1mA Relative current transfer ratio ( % ) VCE = 5V Fig.10 Collector-emitter Saturation Voltage vs. Ambient Temperature 0.16 0.14 Collector-emitter saturation voltage V CE(sat) ( V ) 0.12 0.10 0.08 0.06 0.04 0.02 I F = 20mA I C = 1mA 100 50 0 - 30 0 20 40 60 80 100 Ambient temperature T a ( C ) 0.00 - 30 0 20 40 60 a 80 100 Ambient temperature T ( C ) PC3Q66Q Fig.11 Collector Dark Current vs. Ambient Temperature -5 10 5 Fig.12 Response Time vs. Load Resistance 1000 500 200 100 Response time ( s ) 50 20 10 5 2 1 0.5 0.2 0.1 0.01 td ts tr tf VCE = 2V I C = 2mA T a = 25C VCE = 20V 10 Collector dark current I CEO ( A) -6 5 10 -7 5 10 10 -8 5 -9 5 10 - 10 5 10 - 11 - 30 0 20 40 a 60 ( C ) 80 100 0.1 1 10 Ambient temperature T Load resistance RL ( k ) Fig.13 Collector-emitter Saturation Voltage vs. Forward Current Collector-emitter saturation voltage V CE ( sat ) ( V) 10 T a = 25C 8 I C = 0.5mA 1mA 3mA 6 5mA 7mA 4 2 0 0 2 4 6 F 8 ( mA ) 10 Forward current I q Please refer to the chapter " Precautions for Use " |
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