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| TV SAT IF-FM-Demodulator TDA 6149-5X Preliminary Data Bipolar IC Features q q q q Input sensitivity approx. - 40 dBm Symmetrical, low impedance IF input One AFC output providing DC voltage S-curve Reduced external components. P-DSO-16-1 Type TDA 6149-5X Ordering Code Q67000-A5174 Package P-DSO-16-1 (SMD) Amplifier and IF demodulator for satellite applications, consisting of: two-stage limiter amplifier; divider by 4; video amplifier; automatic gain control; AFC stage; reverse polarity switch for video signals. Application Used in satellite indoor units. Semiconductor Group 1 04.95 TDA 6149-5X Pin Configuration (top view) P-DSO-16 Pin Definitions and Functions Pin No. 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 Symbol AGC AS SK SK GND VP N.C. N.C. OPA - OP TF VA Function AGC-control voltage output AGC-threshold adjust Demodulator tank circuit Demodulator tank circuit Ground Video polarity switch input for positive or negative modulation N.C. N.C. VAFC output voltage Inverting input of the operating amplifier Video output for OP Video output Supply voltage IF-reference input IF-input AGC-low pass filter VS IFREF IFIN ATF Semiconductor Group 2 TDA 6149-5X Block Diagram Semiconductor Group 3 TDA 6149-5X Circuit Description By capacitive coupling, the FM modulated satellite IF signal is fed into the input of a symmetrical limiter amplifier. Asymmetrical operation of this limiter amplifier is also possible, if one of the two inputs is blocked against high frequency signals. The output signal of the amplifier is divided by four and sent directly as well as phase shifted to the quadrature demodulator and a following video amplifier. The phase shifting is done using an external LC tank circuit. The AFC signal is derived from the video output by means of a low pass filter. The response of the AFC can be adjusted my means of external components connected to an internal operational amplifier. The information for the field strength of the FM modulated IF satellite signal is available as a DC voltage at the AGC output. The AGC threshold can be adjusted by a potentiometer. The polarity of the demodulated video signal can be inverted by an external switching voltage fed into the polarity switch input (pin 6). Semiconductor Group 4 TDA 6149-5X Absolute Maximum Ratings TA = 0 to 70 C Parameter Supply voltage AGC-control voltage output AGC-threshold input Demodulator LC-circuit input Video P/N-switching AFC-output - OP low pass output Capacity value Video output IF-inputs AGC-low pass filter Junction temperature Storage temperature Thermal resistance Symbol min. Limit Values max. 6 13 2 3 6 5 3 5 1 5 3 5 150 - 40 125 125 V V V V F V V V C C K/W V V V Open collector 0 1 0.3 - 0.3 - 0.3 0 2 1 0 1 - 0.3 - 0.3 Unit Remarks VS V1 V2 V3, 4 V6 V9 V10 V11 C9, 10 V12 V14, 15 V16 Tj Tstg Rth SA ESD-integrity (according MIL-Std 883 D, methode 3015.7): 1000-1999 V exception: The pins #9 and #11 are not protected against voltage stress >500 V. Operating Range Supply voltage Input frequency range Ambient temperature during operation VS f15 TA 4.5 300 0 5.5 900 70 V MHz C Semiconductor Group 5 TDA 6149-5X Characteristics TA = 25 C; VS = 5 V (test circuit 1) Parameter Power consumption Input Sensitivity IF-input Video Output Video voltage (f = 13.5 MHz) Distortion factor Signal/noise ratio Video P/N-Switching Positive polarity Input current Negative polarity Input current Symbol min. Limit Values typ. 40 max. 50 mA 30 Unit Test Condition IS a15 - 40 3 dBm f15 = 480 MHz V12 THD S/N 300 <1 70 700 mV % dB V6 I6 H V6 I6 L 3.5 50 1 - 50 V A V A AGC-Current (Open-collector current limited) a15 = - 22 dBm a15 = - 8 dBm I1 I1 10 500 A A V1 = 8 V Pin 2 on ground V1 = 8 V Pin 2 on ground AFC-S-Curve f15 = 480 MHz f15 = 480 MHz +15 MHz V9 V9 V9 V9/T 2.2 0 4 - 4.2 V V V mV/ C Rext.1 = 62 k Rext.1 = 330 k RL9 = , V6 = 0 V RL9 = , V6 = 0 V RL9 = , TC of the LCcircuit at Pin 3, 4 = 0 f15 = 480 MHz - 15 MHz Temperature coeff. Semiconductor Group 6 TDA 6149-5X Test Circuit 1 Semiconductor Group 7 TDA 6149-5X Application Circuit Semiconductor Group 8 TDA 6149-5X Diagram 1 Diagram 2 Semiconductor Group 9 |
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