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| To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.) Accordingly, although Hitachi, Hitachi, Ltd., Hitachi Semiconductors, and other Hitachi brand names are mentioned in the document, these names have in fact all been changed to Renesas Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and corporate statement, no changes whatsoever have been made to the contents of the document, and these changes do not constitute any alteration to the contents of the document itself. Renesas Technology Home Page: http://www.renesas.com Renesas Technology Corp. Customer Support Dept. April 1, 2003 Cautions Keep safety first in your circuit designs! 1. Renesas Technology Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corporation product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corporation or a third party. 2. Renesas Technology Corporation assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. 3. All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these materials, and are subject to change by Renesas Technology Corporation without notice due to product improvements or other reasons. It is therefore recommended that customers contact Renesas Technology Corporation or an authorized Renesas Technology Corporation product distributor for the latest product information before purchasing a product listed herein. The information described here may contain technical inaccuracies or typographical errors. Renesas Technology Corporation assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors. Please also pay attention to information published by Renesas Technology Corporation by various means, including the Renesas Technology Corporation Semiconductor home page (http://www.renesas.com). 4. When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to evaluate all information as a total system before making a final decision on the applicability of the information and products. Renesas Technology Corporation assumes no responsibility for any damage, liability or other loss resulting from the information contained herein. 5. Renesas Technology Corporation semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. Please contact Renesas Technology Corporation or an authorized Renesas Technology Corporation product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. 6. The prior written approval of Renesas Technology Corporation is necessary to reprint or reproduce in whole or in part these materials. 7. If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved destination. Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited. 8. Please contact Renesas Technology Corporation for further details on these materials or the products contained therein. HAT2141H Silicon N Channel Power MOS FET Power Switching ADE-208-1582E(Z) Preliminary 6th. Edition Sep. 2002 Features * Capable of 7 V gate drive * Low drive current * High density mounting * Low on-resistance RDS(on) = 22 m typ. (at VGS = 10 V) Outline LFPAK 5 5 D 3 12 4 4 G 1, 2, 3 Source 4 Gate 5 Drain SSS 123 HAT2141H Absolute Maximum Ratings (Ta = 25C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Symbol VDSS VGSS ID ID(pulse) IDR IAP Note 3 Note 3 Note2 Note1 Ratings 100 20 15 60 15 15 22.5 20 150 -55 to + 150 Unit V V A A A A mJ W C C EAR Pch Tch Tstg Notes: 1. PW 10 s, duty cycle 1% 2. Tc = 25C 3. Value at Tch = 25C, Rg 50 Rev.5, Sep. 2002, page 2 of 10 HAT2141H Electrical Characteristics (Ta = 25C) Item Symbol Min 100 20 -- -- 2.0 -- -- 15 -- -- -- -- -- -- -- -- -- -- -- -- Typ -- -- -- -- -- 22 23.5 25 3200 255 125 46 11 10 22 13 70 10 0.82 50 Max -- -- 10 1 3.5 27.5 32 -- -- -- -- -- -- -- -- -- -- -- 1.07 -- Unit V V A A V m m S pF pF pF nc nc nc ns ns ns ns V ns Test Conditions ID = 10 mA, VGS = 0 IG = 100 A, VDS = 0 VGS = 16 V, VDS = 0 VDS = 100 V, VGS = 0 VDS = 10 V, I D = 1 mA ID = 7.5 A, VGS = 10 V ID = 7.5 A, VGS = 7 V VDS = 10 V VGS = 0 f = 1 MHz VDD = 50 V VGS = 10 V ID = 15 A VGS = 10 V, ID = 7.5 A VDD 30 V RL = 4 Rg = 4.7 IF = 15 A, VGS = 0 Note4 Note4 Note4 Note4 Drain to source breakdown voltage V(BR)DSS Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate to source charge Gate to drain charge Turn-on delay time Rise time Turn-off delay time Fall time Body-drain diode forward voltage V(BR)GSS IGSS IDSS VGS(off) RDS(on) RDS(on) |yfs| Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf VDF ID = 7.5 A, VDS = 10 V Body-drain diode reverse recovery trr time Notes: 4. Pulse test IF = 15 A, VGS = 0 diF/ dt = 100 A/ s Rev.5, Sep. 2002, page 3 of 10 HAT2141H Main Characteristics Power vs. Temperature Derating 40 Pch (W) I D (A) 500 100 PW =1 Maximum Safe Operation Area 30 10 Operation in 1 this area is limited by RDS(on) Channel Dissipation Drain Current 0m s 0 1m s s 10 10 s( 20 1s ho t) DC Operation 10 0.1 Tc = 25C 0 50 100 150 Tc (C) 200 Case Temperature Ta = 25C 0.01 0.1 0.3 1 3 10 30 100 Drain to Source Voltage V DS (V) Typical Output Characteristics 20 10 V Pulse Test I D (A) 4.5 V 12 (A) 16 4.0 V 16 20 Typical Transfer Characteristics V DS = 10 V Pulse Test ID Drain Current 12 25C Tc = 75C -25C 4 Drain Current 8 3.7 V 4 VGS = 3.5 V 8 0 2 4 6 Drain to Source Voltage 8 10 V DS (V) 0 2 4 6 Gate to Source Voltage 10 8 V GS (V) Rev.5, Sep. 2002, page 4 of 10 HAT2141H V DS(on) (mV) Drain to Source Saturation Voltage vs. Gate to Source Voltage 800 Pulse Test Static Drain to Source on State Resistance vs. Drain Current 1000 Pulse Test 500 200 600 Drain to Source Voltage Drain to Source On State Resistance R DS(on) (m ) 100 50 20 10 5 2 1 0.1 VGS = 7 V 10 V 400 I D = 10 A 200 5A 2A 0 4 8 12 Gate to Source Voltage 16 20 V GS (V) 0.2 1 0.5 Drain Current 2 5 I D (A) 10 Static Drain to Source on State Resistance R DS(on) (m ) Pulse Test 80 Forward Transfer Admittance |yfs| (S) Static Drain to Source on State Resistance vs. Temperature 100 Forward Transfer Admittance vs. Drain Current 100 30 10 25C 3 1 0.3 0.1 0.1 V DS = 10 V Pulse Test 0.3 1 3 10 30 100 Tc = -25C 75C 60 I D = 2 A, 5 A, 10 A 40 V GS = 7 V 20 10 V 0 -25 0 25 50 75 100 125 150 Case Temperature Tc (C) 2 A, 5 A, 10 A Drain Current I D (A) Rev.5, Sep. 2002, page 5 of 10 HAT2141H Body-Drain Diode Reverse Recovery Time 100 10000 3000 1000 300 100 Crss 30 10 0 10 20 30 VGS = 0 f = 1 MHz 40 50 Coss Ciss Typical Capacitance vs. Drain to Source Voltage Reverse Recovery Time trr (ns) 50 20 di / dt = 100 A / s V GS = 0, Ta = 25C 0.3 1 3 10 30 100 Reverse Drain Current I DR (A) 10 0.1 Capacitance C (pF) Drain to Source Voltage V DS (V) Dynamic Input Characteristics Switching Characteristics 20 1000 V DS (V) 200 V GS (V) I D = 15 A V GS 500 Switching Time t (ns) 160 16 200 100 50 20 10 5 V GS = 10 V , VDS = 30 V 2 Rg = 4.7 , duty < 1 % 1 0.1 0.3 1 3 10 30 Drain Current I D (A) t d(off) t d(on) tr tf Drain to Source Voltage 120 V DS 80 VDD = 100 V 12 50 V 25 V 8 40 VDD = 100 V 50 V 25 V 20 40 60 80 Gate Charge Qg (nc) 4 0 100 Gate to Source Voltage 0 100 Rev.5, Sep. 2002, page 6 of 10 HAT2141H Reverse Drain Current vs. Source to Drain Voltage Repetitive Avalanche Energy EAR (mJ) Maximum Avalanche Energy vs. Channel Temperature Derating 50 I AP = 15 A V DD = 50 V duty < 0.1 % Rg > 50 20 (A) 16 Reverse Drain Current I F 10 V 5V V GS = 0 40 12 30 8 20 4 Pulse Test 0 0.4 0.8 1.2 1.6 V SDF (V) 2.0 10 0 25 Source to Drain Voltage 50 75 100 125 150 Channel Temperature Tch (C) Avalanche Test Circuit EAR = Avalanche Waveform 1 2 L * IAP2 * VDSS VDSS - V DD V DS Monitor L I AP Monitor V (BR)DSS I AP VDD ID V DS Rg Vin 15 V D. U. T 50 0 VDD Rev.5, Sep. 2002, page 7 of 10 HAT2141H Normalized Transient Thermal Impedance vs. Pulse Width 3 Normalized Transient Thermal Impedance s (t) Tc = 25C 1 D=1 0.5 0.2 0.3 0.1 0.1 0.05 ch - c(t) = s (t) * ch - c ch - c = 6.25C/ W, Tc = 25C PDM 0.03 0.02 1 0.0 D= PW T PW T 0.01 10 1s h p ot uls e 100 1m 10 m 100 m 1 10 Pulse Width PW (s) Switching Time Test Circuit Vin Monitor Rg D.U.T. RL Vin Vin 10 V V DS = 30 V Vout Monitor Switching Time Waveform 90% 10% 10% 90% td(on) tr 90% td(off) tf 10% Vout Rev.5, Sep. 2002, page 8 of 10 HAT2141H Package Dimensions As of July, 2002 Unit: mm 4.9 5.3 Max 4.0 0.2 5 0.25 -0.03 +0.05 3.3 1.0 3.95 1 4 6.1 -0.3 +0.1 0 - 8 1.1 Max +0.03 0.07 -0.04 0.75 Max 1.27 0.10 0.40 0.06 0.25 M 0.6 -0.20 1.3 Max +0.25 0.20 -0.03 +0.05 Hitachi Code JEDEC JEITA Mass (reference value) LFPAK -- -- 0.080 g Rev.5, Sep. 2002, page 9 of 10 4.2 |
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