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HiPerFETTM Power MOSFETs
N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr
VDSS IXFK100N10 IXFN150N10
ID25
RDS(on) 12 mW 12 mW
100 V 100 A 100 V 150 A trr 200 ns
TO-264 AA (IXFK)
Symbol VDSS VDGR VGS VGSM ID25 ID120 IDM IAR EAR dv/dt PD TJ TJM Tstg TL VISOL Md Weight
Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGS = 1 MW Continuous Transient TC = 25C TC = 120C, limited by external leads TC = 25C, pulse width limited by TJM TC = 25C TC = 25C IS IDM, di/dt 100 A/ms, VDD VDSS, TJ 150C, RG = 2 W TC = 25C
Maximum Ratings IXFK IXFN 100 100 20 30 100 76 560 75 30 5 500 100 100 20 30 150 560 75 30 5 520 150 -55 ... +150 V V V V A A A A mJ V/ns W C C C C V~ V~
G S S S D D G G D S
(TAB)
miniBLOC, SOT-227 B (IXFN) E153432
S
G = Gate S = Source
D = Drain TAB = Drain
Either Source terminal at miniBLOC can be used as Main or Kelvin Source
-55 ... +150
1.6 mm (0.063 in) from case for 10 s 50/60 Hz, RMS IISOL 1 mA t = 1 min t=1s
300 0.9/6 10
2500 3000
Mounting torque Terminal connection torque
1.5/13 Nm/lb.in. 1.5/13 Nm/lb.in. 30 g
Features International standard packages JEDEC TO-264 AA, epoxy meet UL 94 V-0, flammability classification miniBLOC with Aluminium nitride isolation Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Unclamped Inductive Switching (UIS) rated Low package inductance Fast intrinsic Rectifier
q q q q q q q q
Symbol
Test Conditions
Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 100 2 4 200 TJ = 25C TJ = 125C 400 2 12 V V nA mA mA mW
VDSS VGH(th) IGSS IDSS RDS(on)
VGS = 0 V, ID = 1 mA VDS = VGS, ID = 8 mA VGS = 20 VDC, VDS = 0 VDS = 0.8 * VDSS VGS = 0 V
Applications DC-DC converters Synchronous rectification Battery chargers Switched-mode and resonant-mode power supplies DC choppers Temperature and lighting controls Low voltage relays
q q q q q q q
VGS = 10 V, ID = 75 A Pulse test, t 300 ms, duty cycle d 2 %
Advantages Easy to mount Space savings High power density
q q q
IXYS reserves the right to change limits, test conditions, and dimensions.
92803G(8/96)
(c) 2000 IXYS All rights reserved
1-4
IXFK 100N10 IXFN 150N10
Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 80 9000 VGS = 0 V, VDS = 25 V, f = 1 MHz 3200 1800 30 VGS = 10 V, VDS = 0.5 * VDSS, ID = 75 A RG = 1 W (External), 60 100 60 360 VGS = 10 V, VDS = 0.5 * VDSS, ID = 75 A 75 180 TO-264 AA TO-264 AA miniBLOC, SOT-227 B miniBLOC, SOT-227 B 0.05 0.15 0.24 0.25 S pF pF pF ns ns ns ns nC nC nC K/W K/W K/W K/W
Dim. A A1 A2 b b1 b2 c D E e J K L L1 P Q Q1 R R1 S T Millimeter Min. Max. 4.82 2.54 2.00 1.12 2.39 2.90 0.53 25.91 19.81 5.46 0.00 0.00 20.32 2.29 3.17 6.07 8.38 3.81 1.78 6.04 1.57 5.13 2.89 2.10 1.42 2.69 3.09 0.83 26.16 19.96 BSC 0.25 0.25 20.83 2.59 3.66 6.27 8.69 4.32 2.29 6.30 1.83 Inches Min. Max. .190 .202 .100 .114 .079 .083 .044 .056 .094 .106 .114 .122 .021 .033 1.020 1.030 .780 .786 .215 BSC .000 .010 .000 .010 .800 .820 .090 .102 .125 .144 .239 .247 .330 .342 .150 .170 .070 .090 .238 .248 .062 .072
TO-264 AA Outline
gfs C iss Coss C rss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCK RthJC RthCK
VDS = 10 V; ID = 50 A, pulse test
Source-Drain Diode Symbol IS ISM VSD t rr QRM IRM IF = 25 A -di/dt = 100 A/ms, VR = 50 V Test Conditions VGS = 0 V Repetitive; pulse width limited by TJM
Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. IXFK 100 IXFN 150 IXFK 100 IXFN 150 100 150 400 600 1.75 150 0.6 8 200 A A A A V ns mC A
miniBLOC, SOT-227 B
IF = 100 A, VGS = 0 V, Pulse test, t 300 ms, duty cycle d 2 %
M4 screws (4x) supplied
Dim. A B C D E F G H J K L M N O P Q R S T U Millimeter Min. Max. 31.50 7.80 4.09 4.09 4.09 14.91 30.12 38.00 11.68 8.92 0.76 12.60 25.15 1.98 4.95 26.54 3.94 4.72 24.59 -0.05 31.88 8.20 4.29 4.29 4.29 15.11 30.30 38.23 12.22 9.60 0.84 12.85 25.42 2.13 5.97 26.90 4.42 4.85 25.07 0.1 Inches Min. Max. 1.240 0.307 0.161 0.161 0.161 0.587 1.186 1.496 0.460 0.351 0.030 0.496 0.990 0.078 0.195 1.045 0.155 0.186 0.968 -0.002 1.255 0.323 0.169 0.169 0.169 0.595 1.193 1.505 0.481 0.378 0.033 0.506 1.001 0.084 0.235 1.059 0.174 0.191 0.987 0.004
(c) 2000 IXYS All rights reserved
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
2-4
IXFK 100N10 IXFN 150N10
Fig. 1 Output Characteristics
400
TJ = 25C VGS = 10V 9V
Fig. 2 Input Admittance
300 250
350 300
ID - Amperes
250
8V
ID - Amperes
200 150 100 50 0 0 1 2 3 4 5 6 7 8 9 10
TJ = 125C TJ = 125C
200 150 100 50
7V 6V 5V
0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
VDS - Volts
VGS - Volts
Fig. 3 RDS(on) vs. Drain Current
1.4
TJ = 25C
Fig. 4 Temperature Dependence of Drain to Source Resistance
2.00 1.75
1.3
RDS(on) - Normalized
1.2 1.1 1.0
VGS = 15V VGS = 10V
RDS(on) - Normalized
1.50
ID = 75A
1.25 1.00 0.75 0.50 -50
0.9 0.8 0 40 80 120 160 200 240 280 320
-25
0
25
50
75
100 125 150
ID - Amperes
TJ - Degrees C
Fig. 5 Drain Current vs. Case Temperature
175
Fig. 6 Temperature Dependence of Breakdown and Threshold Voltage
1.2
BVDSS
150N10
150
1.1
BV/VG(th) - Normalized
ID - Amperes
125 100
1.0 0.9 0.8
VGS(th)
100N10
75 50 25 0 -50
0.7 0.6
-25
0
25
50
75
100 125 150
0.5 -50
-25
0
25
50
75
100 125 150
TC - Degrees C
TJ - Degrees C
(c) 2000 IXYS All rights reserved
3-4
IXFK 100N10 IXFN 150N10
Fig.7 Gate Charge Characteristic Curve
12 10
VDS = 50V ID = 75A IG = 1mA
Fig.8 Capacitance Curves
12000 10000
f = 1MHz VDS = 25V
VGS - Volts
8 6 4 2 0 0 50 100 150 200 250 300 350 400
Capacitance - pF
8000
Ciss
6000 4000 2000 0 0 5 10 15 20 25
Coss Crss
Gate Charge - nCoulombs
VDS - Volts
150 125
Fig.9 Source Current vs. Source to Drain Voltage
IS - Amperes
100 75
TJ = 125C
50 25 0 0.00
TJ = 25C
0.25
0.50
0.75
1.00
1.25
1.50
VSD - Volt
Fig.10 Transient Thermal Impedance
0.5 Thermal Response - K/W
0.1
0.01 0.001
0.01
0.1
1
Time - Seconds
(c) 2000 IXYS All rights reserved
4-4

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