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VDSS
I D25
RDS(on)
MegaMOSTMFET
N-Channel Enhancement Mode
IXTH / IXTM 11N80 800 V IXTH / IXTM 13N80 800 V
11 A 0.95 13 A 0.80
Symbol V DSS V DGR V GS V GSM I D25 I DM PD TJ T JM Tstg Md Weight
Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGS = 1 M Continuous Transient TC = 25C TC = 25C, pulse width limited by TJM TC = 25C 11N80 13N80 11N80 13N80
Maximum Ratings 800 800 20 30 11 13 44 52 300 -55 ... +150 150 -55 ... +150 V V V V A A A A W C C C
TO-247 AD (IXTH)
D (TAB)
TO-204 AA (IXTM)
G G = Gate, S = Source, D = Drain, TAB = Drain
Mounting torque
1.13/10 Nm/lb.in. TO-204 = 18 g, TO-247 = 6 g 300 C Features
q q q q
Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s
q
International standard packages Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Low package inductance (< 5 nH) - easy to drive and to protect Fast switching times
Symbol
Test Conditions
Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 800 2 4.5 100 TJ = 25C TJ = 125C 11N80 13N80 250 1 0.95 0.80 V V nA A mA
Applications
q
q
V DSS V GS(th) I GSS I DSS R DS(on)
VGS = 0 V, ID = 3 mA VDS = VGS, ID = 250 A VGS = 20 VDC, VDS = 0 VDS = 0.8 * VDSS VGS = 0 V VGS = 10 V, ID = 0.5 ID25 Pulse test, t 300 s,
q q
Switch-mode and resonant-mode power supplies Motor controls Uninterruptible Power Supplies (UPS) DC choppers
Advantages
q
q q
Easy to mount with 1 screw (TO-247) (isolated mounting screw hole) Space savings High power density
IXYS reserves the right to change limits, test conditions, and dimensions.
915380F (5/96)
IXYS Corporation 3540 Bassett Street, Santa Clara,CA 95054 Tel: 408-982-0700 Fax: 408-496-0670
IXYS Semiconductor Edisonstr. 15, D-68623 Lampertheim, Germany Tel: +49-6206-5030 Fax: +49-6206-503629
IXTH 11N80 IXTH 13N80 IXTM 11N80 IXTM 13N80
Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 8 14 4500 VGS = 0 V, VDS = 25 V, f = 1 MHz 310 65 20 VGS = 10 V, VDS = 0.5 * VDSS, ID = 0.5 ID25 RG = 2 , (External) 33 63 32 145 VGS = 10 V, VDS = 0.5 * VDSS, ID = 0.5 ID25 30 55 50 50 100 50 170 45 80 0.42 0.25 S pF pF pF ns ns ns ns nC nC nC K/W K/W
Terminals: 1 - Gate 3 - Source 2 - Drain Tab - Drain
1 2 3
TO-247 AD (IXTH) Outline
gfs Ciss Coss Crss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCK
V DS = 10 V; ID = 0.5 * ID25, pulse test
Dim.
Source-Drain Diode Symbol IS I SM VSD trr Test Conditions VGS = 0 V Repetitive; pulse width limited by TJM
Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 11N80 13N80 11N80 13N80 11 13 44 52 1.5 800 A A A A V ns
Millimeter Min. Max. A 4.7 5.3 A1 2.2 2.54 A2 2.2 2.6 b 1.0 1.4 1.65 2.13 b1 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC
Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC
TO-204AA (IXTM) Outline
IF = IS, VGS = 0 V, Pulse test, t 300 s, duty cycle d 2 % IF = IS, -di/dt = 100 A/s, VR = 100 V
Pins
1 - Gate 2 - Source Case - Drain
Dim.
Millimeter Min. Max. A 6.4 11.4 A1 3.42 b .97 1.09 D 22.22 e 10.67 11.17 e1 5.21 5.71 L 7.93 p 3.84 4.19 p1 3.84 4.19 q 30.15 BSC R 13.33 R1 4.77 s 16.64 17.14
Inches Min. Max. .250 .450 .135 .038 .043 .875 .420 .440 .205 .225 .312 .151 .165 .151 .165 1.187 BSC .525 .188 .655 .675
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
IXTH 11N80 IXTM 11N80
IXTH 13N80 IXTM 13N80
Fig. 1 Output Characteristics
18 16 14 18 16 14
Fig. 2 Input Admittance
TJ = 25C VDS = 10V
ID - Amperes
10 8 6 4 2 0 0 2 4 6 8 10 12
ID - Amperes
12
12 10 8 6 4 2 0 0 1 2 3 4 5 6 7 8 9 10
VDS - Volts
VGS - Volts
Fig. 3 RDS(on) vs. Drain Current
1.40 1.35 1.30 1.25 1.20 1.15 1.10 1.05 1.00 0.95 0.90 0 2 4 6 8 10 12 14 16 18 20 22 24 26
VGS = 10V TJ = 25C
Fig. 4 Temperature Dependence of Drain to Source Resistance
2.50 2.25
RDS(on) - Normalized
2.00 1.75 1.50 1.25 1.00 0.75 0.50 -50 -25 0 25 50 75 100 125 150
RDS(on) - Ohms
ID - Amperes
TJ - Degrees C
Fig. 5 Drain Current vs. Case Temperature
18 16 14 1.2 1.1
Fig. 6 Temperature Dependence of Breakdown and Threshold Voltage
V GS(th)
BV/VG(th) - Normalized
ID - Amperes
12 10 8 6 4 2 0 -50 -25 0 25 50 75 100 125 150
1.0 0.9 0.8 0.7 0.6 0.5 -50
-25
0
25
50
75
100
125
150
TC - Degrees C
IXYS reserves the right to change limits, test conditions, and dimensions.
TJ - Degrees C
IXYS Corporation 3540 Bassett Street, Santa Clara,CA 95054 Tel: 408-982-0700 Fax: 408-496-0670
IXYS Semiconductor Edisonstr. 15, D-68623 Lampertheim, Germany Tel: +49-6206-5030 Fax: +49-6206-503629
IXTH 11N80 IXTM 11N80
IXTH 13N80 IXTM 13N80
Fig.7 Gate Charge Characteristic Curve
10
Fig.8 Forward Bias Safe Operating Area
10s
8
6 4 2 0 0 25 50 75 100 125 150
ID - Amperes
V DS = 400V ID = 13A IG = 10mA
Limited by RDS(on) 100s
10
1ms 10ms 100ms
VGE - Volts
1
0.1 1 10 100 1000
Gate Charge - nCoulombs
VDS - Volts
Fig.9 Capacitance Curves
4500 4000
Ciss
Fig.10 Source Current vs. Source to Drain Voltage
18 16 14
Capacitance - pF
3500
2500 2000 1500 1000 500 0 0 5
f = 1 MHz V DS = 25V
ID - Amperes
3000
12 10 8 6 4 2
T J = 125C TJ = 25C
Coss Crss
10
15
20
25
0 0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
VCE - Volts
VSD - Volts
Fig.11 Transient Thermal Impedance
1
Thermal Response - K/W
D=0.5
0.1
D=0.2 D=0.1 D=0.05
0.01 D=0.02
D=0.01 Single Pulse
0.001 0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025

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