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| MITSUBISHI SEMICONDUCTOR M62216FP/GP Low Voltage Operation STEP-UP DC-DC Converter DESCRIPTION The M62216FP is designed as low voltage operation STEP-UP DC-DC converter. This IC can operate very low input voltage (over 0.9V) and low power dissipation (circuit current is less than 850A). So, this IC suitable for power supply of portable system that using low voltage battery (DRY battery, rechargeable battery). PIN CONFIGURATION(TOP VIEW) DRIVE2 1 DRIVE1 2 PWM GND 3 4 8 BIAS 7 ON/OFF 6 IN 5 FB FEATURES * Pre-Drive type PWM output (Pre-Drive only) * Low voltage Operation * * * * * * * * * * * * VIN=0.9V min. * Low Current Dissipation * * * * * * * * * * * * IB=850A typ. * Pre-Drive output current can be adjusted * Built-in ON/OFF Function * * * * * * * * * * IB(OFF)=35A typ. * Application for STEP-DOWN Converter can be used OUTLINE: 8P2S-A(FP) 8P2X-A (GP) APPLICATION DC-DC Converter for portable sets of battery used BLOCK DIAGRAM ON/OFF 7 8 BIAS VREF Iconst 1 DRIVE2 OSC 2 DRIVE1 Amp PWM Comp Start Start OSC 3 PWM 6 IN 5 FB 4 GND (1/ 8) 9812 MITSUBISHI SEMICONDUCTOR M62216FP/GP Low Voltage Operation STEP-UP DC-DC Converter ABSOLUTE MAXIMUM RATINGS (Ta=25C , unless otherwise noted) Symbol VIN VBIAS VDRIVE1 VDRIVE2 IDRIVE1 IDRIVE2 Pd Topr Tstg Parameter Input Voltage Bias Terminal Supply Voltage Drive1 Terminal Supply Voltage Drive2 Terminal Supply Voltage Drive1 Terminal Input Current Drive2 Terminal Input Current Power Dissipation Operating Temperature Storage Temperature Condition Ratings 15.5 15.5 15.5 15.5 100 10 440 (FP) 250 (GP) -20 ~+85 -40 ~+150 Unit V V V V mA mA mW C C Ta=25C ELECTRICAL CHARACTERISTICS (Ta=25C, VIN=1.7V, VOUT=VBIAS=3.0V, unless otherwise noted) Block Symbol VIN VBIAS All Device IB IB(OFF) Voltage Reference Parameter Input Voltage Range BIAS Voltage Setting Range *1 BIAS Current BIAS Current at OFF Mode Reference Voltage Input Current Open Loop Voltage Gain FB Terminal Sink Current FB Terminal Source Current Oscillation Frequency Saturation Voltage between PWM Term. and DRIVE1 Term. Saturation Voltage between PWM Term. and DRIVE2 Term. Test Condition Limits Min. Typ. Max. 0.9 1.7 35 15 15 47 30 Unit V V A V mV nA dB A 850 1200 A 1.20 1.26 1.32 10 20 70 260 800 30 95 82 45 87 60 92 1.2 1 1 0.03 0.3 2 3 VREF VREF IIN AV IFB+ IFBfosc Use internal amp as Buffer-amp BIAS Voltage Regulation of VREF VBIAS=1.7~15V IN = 1V / IM fIN = 100Hz , Null Amp Operation Error Amp. IN = 1.4V , FB = 1.25V / IM IN = 1.1V , FB = 1.25V / IM PWM Terminal Monitored PWM Terminal Monitored , IN = 1.1 V A % V V A A V A V Osc. 125 155 kHz 0.25 0.5 1.0 DUTYmax Maximum ON Duty Vsat1 Vsat2 IL1 IL2 VPWM(L) ION IDRIVE1=50mA, IDRIVE2=5mA -1 -1 Leak Current of DRIVE1 Terminal IN = 1.4V Leak Current of DRIVE2 Terminal IN = 1.4V Output Low Voltage of PWM Terminal IPWM = 1mA Input Current of ON/OFF Terminal At ON Status Threshold Voltage of ON/OFF Terminal ON/OFF VTH(ON) 0.65 0.75 *1 : Setting range of BIAS voltage as same as setting range of output voltage . (2/ 8) MITSUBISHI SEMICONDUCTOR M62216FP/GP Low Voltage Operation STEP-UP DC-DC Converter Application circuit (1). Standard Application circuit VIN L 7 ON/OFF BIAS 8 DRIVE1 1 DRIVE2 2 IN 6 FB 5 GND 4 PWM 3 Di VOUT CIN CO RD2 RD1 Tr R2 R1 VIN : 0.9 ~ 14V VOUT : 1.7 ~ 15V (VOUT > VIN) (2). Application circuit 1 (VIN 1.7V) VIN L 7 ON/OFF Di VOUT CIN BIAS 8 DRIVE2 1 DRIVE1 2 CO RD2 RD1 Tr R2 R1 VIN : 1.7 ~ 14V VOUT : 2.5V ~ 15V ( VOUT > VIN) IN 6 FB 5 GND 4 PWM 3 (3). Application circuit 2 (VOUT > 15V) VIN L 7 ON/OFF Di VOUT CIN BIAS 8 DRIVE2 1 DRIVE1 2 CO RD2 RD1 Tr R2 R1 VIN : 1.7 ~ 15V VOUT : 15V ~ ( VOUT > VIN) IN 6 FB 5 GND 4 PWM 3 (4). Application circuit for STEP-DOWN Circuit VIN Tr 7 ON/OFF BIAS 8 DRIVE2 1 DRIVE1 2 IN 6 FB 5 GND 4 PWM 3 L VOUT CIN CO RD2 RD1 Di R1 VIN : 2.0 ~ 15V VOUT : 1.7V ~ 14V ( VOUT < VIN) R2 (3/ 8) MITSUBISHI SEMICONDUCTOR M62216FP/GP Low Voltage Operation STEP-UP DC-DC Converter TYPICAL CHARACTERISTICS THERMAL DERATING (ABSOLUTE MAXIMUM RATING) 600 500 400 300 200 100 0 1.6 1.4 BIAS CURRENT vs. BIAS VOLTAGE (Ta=25C) FP 1.2 1.0 0.8 0.6 0.4 GP 0 25 50 75 100 125 150 AMBIENT TEMPERATURE Ta (C) 0 2 4 6 8 10 12 14 BIAS VOLTAGE VBIAS (V) 16 BIAS CURRENT vs. AMBIENT TEMPERATURE 1.6 1.4 1.2 1.0 0.8 20 0.6 0.4 -40 0 40 VBIAS=1.7V VBIAS=3.0V VBIAS=15V OFF STATE BIAS CURRENT vs. BIAS VOLTAGE (ON/OFF=GND) 80 Ta= -20C Ta= +25C Ta= +85C 60 -20 0 20 40 60 80 100 AMBIENT TEMPERATURE Ta (C) 0 2 4 6 8 10 12 14 16 BIAS VOLTAGE VBIAS (V) OPEN LOOP GAIN vs. INPUT FREQUENCY (Vin=0.1Vrms , Null Amp , Ta=25C) 100 VBIAS=1.7V VBIAS=3.0V VBIAS=15V FB VOLTAGE vs. FB SINK CURRENT (VBIAS=3.0V, IN=1.4V) 1.25 80 1.00 0.75 60 0.50 40 0.25 Ta= -20C Ta= +25C Ta= +85C 20 0.01 0.1 1 10 INPUT FREQUENCY fin (KHz) 100 0.00 0 0.2 0.4 0.6 0.8 1.0 1.2 FB SINK CURRENT IFB+ (mA) 1.4 (4/ 8) MITSUBISHI SEMICONDUCTOR M62216FP/GP Low Voltage Operation STEP-UP DC-DC Converter FB SOURCE CURRENT vs. FB VOLTAGE (VBIAS=3.0V, IN=1.1V) 60 50 OSCILLATING FREQUENCY vs. BIAS VOLTAGE (PWM Terminal Monitored , Ta=25C) 160 140 40 30 20 10 0 Ta= -20C Ta= +25C Ta= +85C 120 100 0 0.5 1.0 1.5 2.0 2.5 FB VOLTAGE VFB (V) 3.0 80 0 2 4 6 8 10 12 14 BIAS VOLTAGE VBIAS (V) 16 OSCILLATING FREQUENCY vs. AMBIENT TEMPERATURE 160 (PWM Terminal Monitored, IN=1.1V) VBIAS=1.7V VBIAS=3.0V MAX ON DUTY vs. BIAS VOLTAGE 100 (PWM Terminal Monitored, IN=1.1V, Ta=25C) 95 140 VBIAS=15V 90 120 85 100 80 80 -40 -20 0 20 40 60 80 100 AMBIENT TEMPERATURE Ta (C) 75 0 2 4 6 8 10 12 14 BIAS VOLTAGE VBIAS (V) 16 MAX ON DUTY vs. AMBIENT TEMPERATURE (PWM Terminal Monitored , IN=1.1V) 100 VBIAS=1.7V VBIAS=3.0V VBIAS=15V SATURATION VOLTAGE BETWEEN PWM-DRIVE1 TERMINAL vs. INPUT CURRENT OF DRIVE1 TERMINAL (IDRIVE2=5mA, IN=1.1V, Ta=25C) 1.0 VBIAS=1.7V VBIAS=3.0V VBIAS=9.0V VBIAS=15V 95 0.8 90 0.6 85 0.4 80 0.2 75 -40 -20 0 20 40 60 80 100 AMBIENT TEMPERATURE Ta (C) 0.0 0 10 20 30 40 50 60 70 INPUT CURRENT OF DRIVE1 TERMINAL IDRIVE1 (mA) (5/ 8) MITSUBISHI SEMICONDUCTOR M62216FP/GP Low Voltage Operation STEP-UP DC-DC Converter SATURATION VOLTAGE BETWEEN PWM-DRIVE1 TERMINAL vs. INPUT CURRENT OF DRIVE1 TERMINAL (VBIAS=3.0V, IN=1.1V, Ta=25C) SATURATION VOLTAGE BETWEEN PWM-DRIVE2 TERMINAL vs. INPUT CURRENT OF DRIVE2 TERMINAL (IN=1.1V, Ta=25C) 0.5 1.7 0.4 1.5 VBIAS=1.7V IDRIVE1=20mA VBIAS=3.0V IDRIVE1=50mA VBIAS=15V IDRIVE1=40mA 0.3 1.3 0.2 IDRIVE2=2mA IDRIVE2=5mA IDRIVE2=10mA 1.1 0.1 0.9 0.0 0 20 40 60 80 100 120 INPUT CURRENT OF DRIVE1 TERMINAL IDRIVE1 (mA) 0.7 0 2 4 6 8 10 12 INPUT CURRENT OF DRIVE2 TERMINAL IDRIVE2 (mA) PWM OUTPUT LOW VOLTAGE vs. PWM SINK CURRENT (VBIAS=3.0V,IN=1.4V) 0.6 0.5 3.0 0.4 0.3 0.2 1.0 0.1 0.0 Ta= -20C Ta=+25C Ta=+85C INPUT ON CURRENT vs. AMBIENT TEMPERATURE 4.0 2.0 VBIAS=VON=1.7V VBIAS=VON=3.0V VBIAS=VON=15V 0 2 4 6 8 10 12 0.0 -40 -20 0 20 40 60 80 100 PWM SINK CURRENT (mA) AMBIENT TEMPERATURE Ta (C) MAX LOAD CURRENT FOR START-UP(*1) vs. INPUT VOLTAGE 200 175 (Standard Application Circuit, Vo=3.0V, Ta=25C) THRESHOLD VOLTAGE OF ON/OFF TERMINAL vs. AMBIENT TEMPERATURE (VBIAS=3.0V) 1.0 0.8 150 0.6 125 100 0.4 75 50 0.2 25 0.0 -40 -20 0 20 40 60 80 100 0 0.8 1.0 Tr:2SC3052-F, L:68uH, RD1:680, RD2:1.6K Tr:2SC3439-H, L:22uH, RD1:1.3K, RD2:3.3K 1.2 1.4 1.6 AMBIENT TEMPERATURE Ta (C) INPUT VOLTAGE VIN (V) (6/ 8) MITSUBISHI SEMICONDUCTOR M62216FP/GP Low Voltage Operation STEP-UP DC-DC Converter EFFICIENCY vs. LOAD CURRENT (Standard Application circuit: VIN=1.5V,Vo=3.0V, Ta=25C) MAX LOAD CURRENT FOR START-UP(*2) vs. INPUT VOLTAGE (Application circuit 1: Vo=5.0V, Ta=25C) 100 200 175 80 150 60 125 100 40 Tr:2SC3052-F Tr:2SC3439-H Tr:2SC3052-F,L:150H, RD1:750,RD2:3.6K Tr:2SC3439-H,L:22H, RD1:1.3K,RD2:6.8K 75 50 25 20 0 1 10 100 LOAD CURRENT Io (mA) 1000 0 1.5 2.0 2.5 3.0 3.5 INPUT VOLTAGE VIN (V) 4.0 EFFICIENCY vs. LOAD CURRENT (Application circuit 1: VIN=3.0V,Vo=5.0V, Ta=25C) 100 80 60 40 Tr:2SC3052-F Tr:2SC3439-H 20 0 1 10 100 LOAD CURRENT Io (mA) 1000 *1, *2 : These characteristics show the maximum output load current when start-up. Therefore, output voltage can grown-up to setting voltage less than a curve in the graph when using these external components value. ( * 2SC3052-F : hFE=250 ~ 500, 2SC3439-H : hFE=600 ~ 1200) (7/ 8) MITSUBISHI SEMICONDUCTOR M62216FP/GP Low Voltage Operation STEP-UP DC-DC Converter Equation for Constants Calculation Constants Standard Application Circuit Application Circuit 1 Application Circuit 2 TON TOFF TON+TOFF TOFF(MIN) VO + VF - VIN VIN - VCE(sat) 1 fosc TON + TOFF 1 + TON TOFF 1 - TOFF(MIN) fosc TON 2 * 1 + TOFF * (Io + IB) VO + VF - VIN VIN - VCE(sat) 1 fosc TON + TOFF 1 + TON TOFF 1 - TOFF(MIN) fosc TON 2 * 1 + TOFF * Io VO + VF - VIN VIN - VCE(sat) 1 fosc TON + TOFF 1 + TON TOFF 1 - TOFF(MIN) fosc TON 2 * 1 + TOFF * Io TON(MAX) Ipk (VIN - VCE(sat)) 2 * TON(MAX) 2 * fosc (VIN - VCE(sat)) 2 * TON(MAX) 2 * fosc (VIN - VCE(sat)) 2 * TON(MAX) 2 * fosc L(MIN) R1 RD1 RD2 2 * Vo * (Io + IB) 2 * Vo * Io 2 * Vo * Io Vo VREF - 1 * R2 Vo - (VBE + Vsat1) (Ipk / hFE) * A1 Vo - (VBE + Vsat2) (Ipk / hFE) * A2 STEP-DOWN Circuit Vo VREF - 1 * R2 Vo - (VBE + Vsat1) (Ipk / hFE) * A1 Vo - (VBE + Vsat2) (Ipk / hFE) * A2 Vo VREF - 1 * R2 VIN - (VBE + Vsat1) (Ipk / hFE) * A1 VIN - (VBE + Vsat2) (Ipk / hFE) * A2 Constants TON TOFF TON+TOFF TOFF(MIN) VO + VF VIN - VCE(sat) - Vo 1 fosc TON + TOFF 1 + TON TOFF 1 - TOFF(MIN) fosc 2 * Io (VIN - VCE(sat) - Vo) * TON(MAX) Io TON(MAX) Ipk L(MIN) R1 RD1 RD2 Vo VREF - 1 * R2 Vo - VBE - Vsat1 Ipk / hFE VIN - Vsat2 (Ipk / hFE) * A3 Notice) * VF : Forward voltage of external diode. * VCE(sat) : Saturation voltage of external transistor. * VBE : Voltage between Base - Emitter of external transistor. * hFE : hFE of external transistor at saturating. * A1 : Ratio of current into DRIVE1 terminal. (A1 = 0.8 ~ 0.9) * A2 : Ratio of current into DRIVE2 terminal. (A2 = 1 - A1) * A3 : Ratio of current into DRIVE2 terminal. (A3 = 0.1 ~ 0.2) * Set R2 to several K ~ several 10ths k. * Set current into DRIVE2 terminal more than 100A. (Ipk / hFE) * A2 100A, (Ipk / hFE) * A3 100A,. * Set Io to 1/ 5 ~ 1/ 3 of maximum load current. * The maximum rating of current of external parts (transistor, diode and inductor) are 1.5 to 2 times of Ipk. (8/ 8) |
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