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PMP4201G; PMP4201Y
NPN/NPN matched double transistors; hFE1/hFE2 = 2 %
Rev. 01 -- 14 February 2006 Product data sheet
1. Product profile
1.1 General description
NPN/NPN matched double transistors in small Surface Mounted Device (SMD) plastic packages. The transistors in the SOT363 (SC-88) package are fully isolated internally.
Table 1: Product overview Package Philips PMP4201G PMP4201Y SOT353 SOT363 JEITA SC-88A SC-88 NPN/NPN hFE1/hFE2 5 % complement PMP4501G PMP4501Y PNP/PNP complement PMP5201G PMP5201Y
Type number
1.2 Features
s s s s Current gain matching Base-emitter voltage matching Common emitter configuration for SOT353 types Application-optimised pinout
1.3 Applications
s Current mirror s Differential amplifier
1.4 Quick reference data
Table 2: Symbol Per transistor VCEO IC hFE Per device hFE1/hFE2 VBE1 - VBE2
[1] [2]
Quick reference data Parameter collector-emitter voltage collector current DC current gain VCE = 5 V; IC = 2 mA VCE = 5 V; IC = 2 mA VCE = 5 V; IC = 2 mA
[1]
Conditions open base
Min 200
Typ 290
Max 45 100 450
Unit V mA
hFE matching VBE matching
-
-
2 2
% mV
[2]
The smaller of the two values is taken as the numerator. The smaller of the two values is subtracted from the larger value.
Philips Semiconductors
PMP4201G; PMP4201Y
NPN/NPN matched double transistors; hFE1/hFE2 = 2 %
2. Pinning information
Table 3: Pin SOT353 1 2 3 4 5 base TR1 emitter TR1, TR2 base TR2 collector TR2 collector TR1
1 2 3 1 2 3
006aaa549
Pinning Description Simplified outline Symbol
5
4
5
4
TR1 TR2
SOT363 1 2 3 4 5 6 base TR1 base TR2 collector TR2 emitter TR2 emitter TR1 collector TR1
1 2 3 1 2 3
006aaa548
6
5
4
6
TR1
5
4
TR2
3. Ordering information
Table 4: Ordering information Package Name PMP4201G PMP4201Y SC-88A SC-88 Description plastic surface mounted package; 5 leads plastic surface mounted package; 6 leads Version SOT353 SOT363 Type number
4. Marking
Table 5: Marking codes Marking code [1] R7* S7* Type number PMP4201G PMP4201Y
[1] * = -: made in Hong Kong * = p: made in Hong Kong * = t: made in Malaysia * = W: made in China
PMP4201G_Y_1
(c) Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet
Rev. 01 -- 14 February 2006
2 of 14
Philips Semiconductors
PMP4201G; PMP4201Y
NPN/NPN matched double transistors; hFE1/hFE2 = 2 %
5. Limiting values
Table 6: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol VCBO VCEO VEBO IC ICM Ptot Per device Ptot Tstg Tj Tamb
[1]
Parameter collector-base voltage collector-emitter voltage emitter-base voltage collector current peak collector current total power dissipation total power dissipation storage temperature junction temperature ambient temperature
Conditions open emitter open base open collector single pulse; tp 1 ms Tamb 25 C Tamb 25 C
[1]
Min -65 -65
Max 50 45 6 100 200 200 300 +150 150 +150
Unit V V V mA mA mW mW C C C
Per transistor
[1]
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint.
6. Thermal characteristics
Table 7: Symbol Rth(j-a) Thermal characteristics Parameter thermal resistance from junction to ambient thermal resistance from junction to ambient Conditions in free air
[1]
Min -
Typ -
Max 625
Unit K/W
Per transistor
Per device Rth(j-a)
[1]
in free air
[1]
-
-
416
K/W
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
PMP4201G_Y_1
(c) Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet
Rev. 01 -- 14 February 2006
3 of 14
Philips Semiconductors
PMP4201G; PMP4201Y
NPN/NPN matched double transistors; hFE1/hFE2 = 2 %
7. Characteristics
Table 8: Characteristics Tamb = 25 C unless otherwise specified. Symbol ICBO Parameter collector-base cut-off current Conditions VCB = 30 V; IE = 0 A VCB = 30 V; IE = 0 A; Tj = 150 C IEBO hFE emitter-base cut-off current DC current gain VEB = 5 V; IC = 0 A VCE = 5 V; IC = 10 A VCE = 5 V; IC = 2 mA VCEsat collector-emitter saturation voltage IC = 10 mA; IB = 0.5 mA IC = 100 mA; IB = 5 mA VBEsat base-emitter saturation IC = 10 mA; voltage IB = 0.5 mA IC = 100 mA; IB = 5 mA VBE base-emitter voltage VCE = 5 V; IC = 2 mA VCE = 5 V; IC = 10 mA Cc collector capacitance VCB = 10 V; IE = ie = 0 A; f = 1 MHz VEB = 0.5 V; IC = ic = 0 A; f = 1 MHz VCE = 5 V; IC = 10 mA; f = 100 MHz VCE = 5 V; IC = 0.2 mA; RS = 2 k; f = 10 Hz to 15.7 kHz VCE = 5 V; IC = 0.2 mA; RS = 2 k; f = 1 kHz; B = 200 Hz
[1]
Min -
Typ -
Max 15 5
Unit nA A
Per transistor
200 610 -
250 290 50 200 760 910 660 -
100 450 200 400 710 770 1.5
nA
mV mV mV mV mV mV pF
[1]
[2]
[2]
Ce
emitter capacitance
-
11
-
pF
fT
transition frequency
100
250
-
MHz
NF
noise figure
-
2.8
-
dB
-
3.3
-
dB
PMP4201G_Y_1
(c) Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet
Rev. 01 -- 14 February 2006
4 of 14
Philips Semiconductors
PMP4201G; PMP4201Y
NPN/NPN matched double transistors; hFE1/hFE2 = 2 %
Table 8: Characteristics ...continued Tamb = 25 C unless otherwise specified. Symbol Per device hFE1/hFE2 hFE matching VCE = 5 V; IC = 2 mA VCE = 5 V; IC = 2 mA
[3]
Parameter
Conditions
Min -
Typ -
Max 2 2
Unit % mV
VBE1 - VBE2 VBE matching
[4]
[1] [2] [3] [4]
VBEsat decreases by about 1.7 mV/K with increasing temperature. VBE decreases by about 2 mV/K with increasing temperature. The smaller of the two values is taken as the numerator. The smaller of the two values is subtracted from the larger value.
PMP4201G_Y_1
(c) Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet
Rev. 01 -- 14 February 2006
5 of 14
Philips Semiconductors
PMP4201G; PMP4201Y
NPN/NPN matched double transistors; hFE1/hFE2 = 2 %
0.20 IC (A) 0.16
006aaa532
IB (mA) = 4.50 4.05 3.60 3.15 2.70 2.25 1.80 1.35 0.90
600 hFE
006aaa533
400
(1)
0.12
(2)
0.08
0.45 200
(3)
0.04
0 0 2 4 6 8 10 VCE (V)
0 10-2
10-1
1
10
102 103 IC (mA)
Tamb = 25 C
VCE = 5 V (1) Tamb = 100 C (2) Tamb = 25 C (3) Tamb = -55 C
Fig 1. Collector current as a function of collector-emitter voltage; typical values
1.3 VBEsat (V) 1.1
006aaa534
Fig 2. DC current gain as a function of collector current; typical values
10 VCEsat (V) 1
006aaa535
0.9
(1) (2) (3)
0.7
0.5
10-1
(1)
0.3 10-2 10-1
(2) (3)
0.1 10-1
1
10
102 IC (mA)
103
1
10
102 IC (mA)
103
IC/IB = 20 (1) Tamb = -55 C (2) Tamb = 25 C (3) Tamb = 100 C
IC/IB = 20 (1) Tamb = 100 C (2) Tamb = 25 C (3) Tamb = -55 C
Fig 3. Base-emitter saturation voltage as a function of collector current; typical values
Fig 4. Collector-emitter saturation voltage as a function of collector current; typical values
PMP4201G_Y_1
(c) Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet
Rev. 01 -- 14 February 2006
6 of 14
Philips Semiconductors
PMP4201G; PMP4201Y
NPN/NPN matched double transistors; hFE1/hFE2 = 2 %
1 VBE (V) 0.8
006aaa536
103
006aaa537
fT (MHz)
102
0.6
0.4 10-1
1
10
102 IC (mA)
103
10 1 10 IC (mA)
102
VCE = 5 V; Tamb = 25 C
VCE = 5 V; Tamb = 25 C
Fig 5. Base-emitter voltage as a function of collector current; typical values
5 Cc (pF)
006aaa538
Fig 6. Transition frequency as a function of collector current; typical values
15 Ce (pF) 13
006aaa539
4
3
11
2
9
1
7
0 0 2 4 6 8 10 VCB (V)
5 0 2 4 VEB (V) 6
Tamb = 25 C; f = 1 MHz
Tamb = 25 C; f = 1 MHz
Fig 7. Collector capacitance as a function of collector-base voltage; typical values
Fig 8. Emitter capacitance as a function of emitter-base voltage; typical values
PMP4201G_Y_1
(c) Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet
Rev. 01 -- 14 February 2006
7 of 14
Philips Semiconductors
PMP4201G; PMP4201Y
NPN/NPN matched double transistors; hFE1/hFE2 = 2 %
8. Application information
V+
VCC
R1
OUT1 IN1 l out
TR1 TR2
OUT2 IN2
TR1
TR2
V-
006aaa523 006aaa525
Fig 9. Current mirror
Fig 10. Differential amplifier
9. Package outline
2.2 1.8 5 4 0.45 0.15 1.1 0.8 6 2.2 1.8 5 4 0.45 0.15 1.1 0.8
2.2 1.35 2.0 1.15
2.2 1.35 2.0 1.15
pin 1 index
1 0.65 1.3 Dimensions in mm
2
3 0.3 0.2 0.25 0.10 04-11-16 Dimensions in mm
1 0.65 1.3
2
3 0.3 0.2 0.25 0.10 04-11-08
Fig 11. Package outline SOT353 (SC-88A)
Fig 12. Package outline SOT363 (SC-88)
PMP4201G_Y_1
(c) Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet
Rev. 01 -- 14 February 2006
8 of 14
Philips Semiconductors
PMP4201G; PMP4201Y
NPN/NPN matched double transistors; hFE1/hFE2 = 2 %
10. Packing information
Table 9: Packing methods The indicated -xxx are the last three digits of the 12NC ordering code. [1] Type number Package PMP4201G PMP4201Y SOT353 SOT363 Description 4 mm pitch, 8 mm tape and reel 4 mm pitch, 8 mm tape and reel; T1 4 mm pitch, 8 mm tape and reel; T2
[1] [2] [3]
[2] [3]
Packing quantity 3000 -115 -115 -125 10000 -135 -135 -165
For further information and the availability of packing methods, see Section 17. T1: normal taping T2: reverse taping
PMP4201G_Y_1
(c) Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet
Rev. 01 -- 14 February 2006
9 of 14
Philips Semiconductors
PMP4201G; PMP4201Y
NPN/NPN matched double transistors; hFE1/hFE2 = 2 %
11. Soldering
2.65 0.60 (1x)
2.35
0.40 0.90 2.10
solder paste solder lands solder resist occupied area
0.50 (4x)
0.50 (4x)
1.20 2.40
MSA366
Dimensions in mm
Fig 13. Reflow soldering footprint SOT353 (SC-88A)
2.25 2.65
4.50 2.70 0.70
0.30 1.00 4.00
solder lands solder resist occupied area
1.15 3.75 transport direction during soldering
Dimensions in mm
Fig 14. Wave soldering footprint SOT353 (SC-88A)
PMP4201G_Y_1
(c) Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet
Rev. 01 -- 14 February 2006
10 of 14
Philips Semiconductors
PMP4201G; PMP4201Y
NPN/NPN matched double transistors; hFE1/hFE2 = 2 %
2.65 0.60 (2x)
2.35
0.40 0.90 2.10 (2x) 0.50 (4x)
solder paste solder lands solder resist occupied area
0.50 (4x)
1.20 2.40
MSA432
Dimensions in mm
Fig 15. Reflow soldering footprint SOT363 (SC-88)
5.25
4.50
0.30 1.00 4.00
solder lands solder resist occupied area
1.15 3.75 transport direction during soldering
Dimensions in mm
Fig 16. Wave soldering footprint SOT363 (SC-88)
PMP4201G_Y_1
(c) Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet
Rev. 01 -- 14 February 2006
11 of 14
Philips Semiconductors
PMP4201G; PMP4201Y
NPN/NPN matched double transistors; hFE1/hFE2 = 2 %
12. Revision history
Table 10: Revision history Release date 20060214 Data sheet status Product data sheet Change notice Doc. number Supersedes Document ID PMP4201G_Y_1
PMP4201G_Y_1
(c) Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet
Rev. 01 -- 14 February 2006
12 of 14
Philips Semiconductors
PMP4201G; PMP4201Y
NPN/NPN matched double transistors; hFE1/hFE2 = 2 %
13. Data sheet status
Level I II Data sheet status [1] Objective data Preliminary data Product status [2] [3] Development Qualification Definition This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN).
III
Product data
Production
[1] [2] [3]
Please consult the most recently issued data sheet before initiating or completing a design. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.
14. Definitions
Short-form specification -- The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition -- Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information -- Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification.
customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes -- Philips Semiconductors reserves the right to make changes in the products - including circuits, standard cells, and/or software - described or contained herein in order to improve design and/or performance. When the product is in full production (status `Production'), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified.
16. Trademarks
Notice -- All referenced brands, product names, service names and trademarks are the property of their respective owners.
15. Disclaimers
Life support -- These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors
17. Contact information
For additional information, please visit: http://www.semiconductors.philips.com For sales office addresses, send an email to: sales.addresses@www.semiconductors.philips.com
PMP4201G_Y_1
(c) Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet
Rev. 01 -- 14 February 2006
13 of 14
Philips Semiconductors
PMP4201G; PMP4201Y
NPN/NPN matched double transistors; hFE1/hFE2 = 2 %
18. Contents
1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics. . . . . . . . . . . . . . . . . . . 3 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Application information. . . . . . . . . . . . . . . . . . . 8 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8 Packing information. . . . . . . . . . . . . . . . . . . . . . 9 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 12 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 13 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Contact information . . . . . . . . . . . . . . . . . . . . 13
(c) Koninklijke Philips Electronics N.V. 2006
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Date of release: 14 February 2006 Document number: PMP4201G_Y_1
Published in The Netherlands

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