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| STP20N20 STF20N20 - STD20N20 N-CHANNEL 200V - 0.10 - 18A TO-220/TO-220FP/DPAK LOW GATE CHARGE STripFETTM II MOSFET Table 1: General Features TYPE STD20N20 STF20N20 STP20N20 s s s s Figure 1: Package Id 18 A 18 A 18 A PTOT 90 W 25 W 90 W 3 1 2 1 3 2 VDSS 200 V 200 V 200 V RDS(on) < 0.125 < 0.125 < 0.125 TYPICAL RDS(on) = 0.10 EXCEPTIONAL dv/dt CAPABILITY LOW GATE CHARGE 100% AVALANCHE TESTED TO-220 TO-220FP DESCRIPTION This MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high-efficiency isolated DC-DC converters. 3 1 DPAK Figure 2: Internal Schematic Diagram APPLICATIONS s HIGH CURRENT SWITCHING APPLICATIONS s HIGH EFFICIENCY DC-DC CONVERTERS s PRIMARY SIDE SWITCH Table 2: Order Codes SALES TYPE STD20N20T4 STF20N20 STP20N20 MARKING D20N20 F20N20 P20N20 PACKAGE DPAK TO-220FP TO-220 PACKAGING TAPE & REEL TUBE TUBE Rev. 3 January 2005 1/13 STP20N20 - STF20N20 - STD20N20 Table 3: Absolute Maximum ratings Symbol VDS VDGR VGS ID ID IDM ( ) PTOT dv/dt (1) Tj Tstg Parameter TO-220/DPAK Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 k) Gate- source Voltage Drain Current (continuous) at TC = 25C Drain Current (continuous) at TC = 100C Drain Current (pulsed) Total Dissipation at TC = 25C Derating Factor Peak Diode Recovery voltage slope Operating Junction Temperature Storage Temperature 90 0.72 15 -50 to 150 200 200 20 18 11 72 25 0.2 Value TO-220FP V V V A A A W W/C V/ns C Unit ( ) Pulse width limited by safe operating area (1) ISD 18A, di/dt 400A/s, VDD V(BR)DSS Table 4: Thermal Data TO-220 Rthj-case Rthj-amb Tl Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max Maximum Lead Temperature For Soldering Purpose 1.38 62.5 DPAK 1.38 50(#) 300 TO-220FP 5 62.5 C/W C/W C (#) When mounted on 1inch FR-4, 2 Oz copper board. Table 5: Avalanche Characteristics Symbol IAR EAS Parameter Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max) Single Pulse Avalanche Energy (starting Tj = 25 C, ID = IAR, VDD = 50 V) Max Value 18 110 Unit A mJ ELECTRICAL CHARACTERISTICS (TCASE =25C UNLESS OTHERWISE SPECIFIED) Table 6: On/Off Symbol V(BR)DSS IDSS IGSS VGS(th) RDS(on) Parameter Drain-source Breakdown Voltage Zero Gate Voltage Drain Current (VGS = 0) Gate-body Leakage Current (VDS = 0) Gate Threshold Voltage Static Drain-source On Resistance Test Conditions ID = 1 mA, VGS = 0 VDS = Max Rating VDS = Max Rating, TC = 125 C VGS = 20V VDS = VGS, ID = 250 A VGS = 10V, ID = 10 A 2 3 0.10 Min. 200 1 10 100 4 0.125 Typ. Max. Unit V A A nA V 2/13 STP20N20 - STF20N20 - STD20N20 ELECTRICAL CHARACTERISTICS (CONTINUED) Table 7: Dynamic Symbol gfs (1) Ciss Coss Crss td(on) tr td(off) tr Qg Qgs Qgd Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Test Conditions VDS = 25 V, ID= 10 A VDS = 25V, f = 1 MHz, VGS = 0 Min. Typ. 13 940 197 30 15 30 40 10 28 5.6 14.5 39 Max. Unit S pF pF pF ns ns ns ns nC nC nC VDD = 100 V, ID = 10 A, RG= 4.7 VGS = 10 V (see Figure 17) VDD = 160V, ID = 20 A, VGS = 10V (see Figure 20) Table 8: Source Drain Diode Symbol ISD ISDM (2) VSD (1) trr Qrr IRRM trr Qrr IRRM Parameter Source-drain Current Source-drain Current (pulsed) Forward On Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 20 A, VGS = 0 ISD = 20 A, di/dt = 100A/s VDD = 50V, Tj = 25C (see Figure 18) ISD = 20 A, di/dt = 100A/s VDD = 50V, Tj = 150C (see Figure 18) 155 775 10 183 1061 11.6 Test Conditions Min. Typ. Max. 18 72 1.6 Unit A A V ns nC A ns nC A (1) Pulsed: Pulse duration = 300 s, duty cycle 1.5 %. (2) Pulse width limited by safe operating area. 3/13 STP20N20 - STF20N20 - STD20N20 Figure 3: Safe Operating Area For TO-220/ DPAK Figure 6: Thermal Impedance For TO-220/ DPAK Figure 4: Safe Operating Area For TO-220FP Figure 7: Thermal Impedance For TO-220FP Figure 5: Output Characteristics Figure 8: Transfer Characteristics 4/13 STP20N20 - STF20N20 - STD20N20 Figure 9: Transconductance Figure 12: Static Drain-source On Resistance Figure 10: Gate Charge vs Gate-source Voltage Figure 13: Capacitance Variations Figure 11: Normalized Gate Threshold Voltage vs Temperature Figure 14: Normalized On Resistance vs Temperature 5/13 STP20N20 - STF20N20 - STD20N20 Figure 15: Source-Drain Forward Characteristics 6/13 STP20N20 - STF20N20 - STD20N20 Figure 16: Unclamped Inductive Load Test Circuit Figure 19: Unclamped Inductive Wafeform Figure 17: Switching Times Test Circuit For Resistive Load Figure 20: Gate Charge Test Circuit Figure 18: Test Circuit For Inductive Load Switching and Diode Recovery Times 7/13 STP20N20 - STF20N20 - STD20N20 TO-220 MECHANICAL DATA DIM. A b b1 c D E e e1 F H1 J1 L L1 L20 L30 mm. MIN. 4.40 0.61 1.15 0.49 15.25 10 2.40 4.95 1.23 6.20 2.40 13 3.50 16.40 28.90 3.75 2.65 3.85 2.95 0.147 0.104 TYP MAX. 4.60 0.88 1.70 0.70 15.75 10.40 2.70 5.15 1.32 6.60 2.72 14 3.93 MIN. 0.173 0.024 0.045 0.019 0.60 0.393 0.094 0.194 0.048 0.244 0.094 0.511 0.137 0.645 1.137 0.151 0.116 inch TYP. MAX. 0.181 0.034 0.066 0.027 0.620 0.409 0.106 0.202 0.052 0.256 0.107 0.551 0.154 oP Q 8/13 STP20N20 - STF20N20 - STD20N20 TO-220FP MECHANICAL DATA mm. MIN. 4.4 2.5 2.5 0.45 0.75 1.15 1.15 4.95 2.4 10 16 28.6 9.8 2.9 15.9 9 3 30.6 10.6 3.6 16.4 9.3 3.2 1.126 .0385 0.114 0.626 0.354 0.118 TYP MAX. 4.6 2.7 2.75 0.7 1 1.7 1.7 5.2 2.7 10.4 MIN. 0.173 0.098 0.098 0.017 0.030 0.045 0.045 0.195 0.094 0.393 0.630 1.204 0.417 0.141 0.645 0.366 0.126 inch TYP. MAX. 0.181 0.106 0.108 0.027 0.039 0.067 0.067 0.204 0.106 0.409 DIM. A B D E F F1 F2 G G1 H L2 L3 L4 L5 L6 L7 O A B L3 L6 L7 F1 F D G1 H F2 L2 L5 E 123 L4 G 9/13 STP20N20 - STF20N20 - STD20N20 TO-252 (DPAK) MECHANICAL DATA mm MIN. A A1 A2 B B2 C C2 D E G H L2 L4 V2 0.60 0 o DIM. 2.20 0.90 0.03 0.64 5.20 0.45 0.48 6.00 6.40 4.40 9.35 inch MAX. 2.40 1.10 0.23 0.90 5.40 0.60 0.60 6.20 6.60 4.60 10.10 MIN. 0.087 0.035 0.001 0.025 0.204 0.018 0.019 0.236 0.252 0.173 0.368 0.031 1.00 8 o TYP. TYP. MAX. 0.094 0.043 0.009 0.035 0.213 0.024 0.024 0.244 0.260 0.181 0.398 0.8 0.024 0 o 0.039 0o P032P_B 10/13 STP20N20 - STF20N20 - STD20N20 DPAK FOOTPRINT TUBE SHIPMENT (no suffix)* All dimensions are in millimeters All dimensions are in millimeters TAPE AND REEL SHIPMENT (suffix "T4")* REEL MECHANICAL DATA DIM. A B C D G N T 1.5 12.8 20.2 16.4 50 22.4 18.4 13.2 mm MIN. MAX. 330 0.059 0.504 0.520 0.795 0.645 0.724 1.968 0.881 BULK QTY 2500 inch MIN. MAX. 12.992 TAPE MECHANICAL DATA DIM. A0 B0 B1 D D1 E F K0 P0 P1 P2 R W BASE QTY 2500 mm MIN. 6.8 10.4 1.5 1.5 1.65 7.4 2.55 3.9 7.9 1.9 40 15.7 16.3 inch MIN. MAX. 7 0.267 0.275 0.409 0.417 0.476 0.059 0.063 0.059 0.065 0.073 0.291 0.299 0.100 0.108 0.153 0.161 0.311 0.319 0.075 0.082 1.574 0.618 0.641 MAX. 10.6 12.1 1.6 1.85 7.6 2.75 4.1 8.1 2.1 * on sales type 11/13 STP20N20 - STF20N20 - STD20N20 Table 9: Revision History Date 06-Dec-2004 07-Dec-2004 12-Jan-2005 Revision 1 2 3 Data Brief First Revision Final datasheet Description of Changes 12/13 STP20N20 - STF20N20 - STD20N20 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics All other names are the property of their respective owners (c) 2005 STMicroelectronics - All Rights Reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America 13/13 |
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