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| STS7C4F30L N-CHANNEL 30V - 0.018 - 7A SO-8 P-CHANNEL 30V - 0.070 - 4A SO-8 STripFETTM POWER MOSFET TYPE STS7C4F30L(N-Channel) STS7C4F30L(P-Channel) s s s VDSS 30 V 30 V RDS(on) <0.022 <0.080 ID 7A 4A s TYPICAL RDS(on) (N-Channel) = 0.018 TYPICAL RDS(on) (P-Channel) = 0.070 STANDARD OUTLINE FOR EASY AUTOMATED SURFACE MOUNT ASSEMBLY LOW THRESHOLD DRIVE SO-8 DESCRIPTION This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature SizeTM" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. APPLICATIONS s DC/DC CONVERTERS s BATTERY MANAGEMENT IN NOMADIC EQUIPMENT s POWER MANAGEMENT IN CELLULAR PHONES INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID ID IDM(*) Ptot Tstg Tj Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 k) Gate- source Voltage Drain Current (continuos) at TC = 25C Single Operating Drain Current (continuos) at TC = 100C Single Operating Drain Current (pulsed) Total Dissipation at TC = 25C Dual Operating Total Dissipation at TC = 25C Single Operating Storage Temperature Max. Operating Junction Temperature N-CHANNEL 30 30 20 7 4.4 28 1.6 2 -60 to 150 150 P-CHANNEL 30 30 20 4 2.5 16 Unit V V V A A A W W C C (*) Pulse width limited by safe operating area. June 2001 . Note: P-CHANNEL MOSFET actual polarity of voltages and current has to be reversed 1/10 STS7C4F30L THERMAL DATA Rthj-amb(1) Tl Thermal Resistance Junction-ambient Single Operation Dual Operating Maximum Lead Temperature For Soldering Purpose 62.5 78 300 C/W C/W C (1) when mounted on 0.5 in2 pad of 2 oz. copper ELECTRICAL CHARACTERISTICS (Tcase = 25 C unless otherwise specified) OFF Symbol V(BR)DSS IDSS IGSS Parameter Drain-source Breakdown Voltage Zero Gate Voltage Drain Current (VGS = 0) Gate-body Leakage Current (VDS = 0) Test Conditions ID = 250 A, VGS = 0 VDS = Max Rating VDS = Max Rating TC = 125C VGS = 20V VGS = 20V n-ch p-ch n-ch p-ch Min. 30 30 1 10 100 100 Typ. Max. Unit V A A nA nA ON Symbol VGS(th) Parameter Gate Threshold Voltage Static Drain-source On Resistance Test Conditions VDS = VGS VGS = 10 V VGS = 10 V VGS = 4.5 V VGS = 4.5 V ID = 250 A ID ID ID ID = 3.5 A =2A = 3.5 A =2A n-ch p-ch n-ch p-ch n-ch p-ch Min. 1 1 Typ. 1.6 1.6 0.018 0.070 0.021 0.085 Max. 2.5 2.5 0.022 0.080 0.026 0.10 Unit V V RDS(on) DYNAMIC Symbol gfs (*) Ciss Coss Crss Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions VDS = 15 V VDS = 15 V ID= 3.5 A ID= 2 A n-ch p-ch n-ch p-ch VDS = 25V, f = 1 MHz, VGS = 0 n-ch p-ch n-ch p-ch Min. Typ. 10 10 1050 1350 250 490 85 130 Max. Unit S S pF pF pF pF pF pF 2/10 STS7C4F30L ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symbol td(on) tr Parameter Turn-on Delay Time Test Conditions N-CHANNEL ID = 3.5 A VDD = 15 V RG = 4.7 VGS = 4.5 V P-CHANNEL VDD = 15 V ID = 2 A RG = 4.7 VGS = 4.5 V (Resistive Load, Figure 1) N-CHANNEL VDD = 24V ID = 7A VGS = 5V P-CHANNEL VDD = 24V ID = 4A VGS = 5V (see test circuit, Figure 2) n-ch p-ch n-ch p-ch Min. Typ. 22 25 60 35 Max. Unit ns ns ns ns Rise Time Qg Qgs Qgd Total Gate Charge Gate-Source Charge Gate-Drain Charge n-ch p-ch n-ch p-ch n-ch p-ch 17.5 12.5 4 5 7 3 23 16 nC nC nC nC nC nC SWITCHING OFF Symbol td(off) tf Parameter Turn-off Delay Time Test Conditions N-CHANNEL ID = 3.5 A VDD = 15 V RG = 4.7 VGS = 4.5 V P-CHANNEL VDD = 15 V ID = 2 A RG = 4.7 VGS = 4.5 V (Resistive Load, Figure 1) Test Conditions n-ch p-ch n-ch p-ch ISD = 7 A ISD = 4 A VGS = 0 VGS = 0 n-ch p-ch n-ch p-ch n-ch p-ch n-ch p-ch 50 45 40 36 1.6 1.6 n-ch p-ch n-ch p-ch Min. Typ. 42 125 10 35 Max. Unit ns ns ns ns Fall Time SOURCE DRAIN DIODE Symbol ISD ISDM (*) VSD() Parameter Source-drain Current Source-drain Current (pulsed) Forward On Voltage Min. Typ. Max. 7 4 28 16 1.2 1.2 Unit A A A A V V ns ns nC nC A A trr Qrr IRRM Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current N-CHANNEL ISD = 7 A di/dt = 100A/s VDD = 15 V Tj =150 oC P-CHANNEL ISD = 4 A di/dt = 100A/s Tj =150 oC VDD = 15 V (see test circuit, Figure 3) () Pulsed: Pulse duration = 300 s, duty cycle 1.5 %. (*) Pulse width limited by safe operating area. 3/10 STS7C4F30L Safe Operating Area n-ch Thermal Impedance n-ch Output Characteristics n-ch Transfer Characteristics n-ch Transconductance n-ch Static Drain-source On Resistance n-ch 4/10 STS7C4F30L Gate Charge vs Gate-source Voltage n-ch Capacitance Variations n-ch Normalized Gate Threshold Voltage vs Temperature n-ch Normalized on Resistance vs Temperature n-ch Source-drain Diode Forward Characteristics n-ch 5/10 STS7C4F30L Safe Operating Area p-ch Thermal Impedance p-ch Output Characteristics p-ch Transfer Characteristics p-ch Transconductance p-ch Static Drain-source On Resistance p-ch 6/10 STS7C4F30L Gate Charge vs Gate-source Voltage p-ch Capacitance Variations p-ch Normalized Gate Threshold Voltage vs Temperature p-ch Normalized on Resistance vs Temperature p-ch Source-drain Diode Forward Characteristics p-ch 7/10 STS7C4F30L Fig. 1: Switching Times Test Circuits For Resistive Load Fig. 2: Gate Charge test Circuit Fig. 3: Test Circuit For Diode Recovery Behaviour 8/10 STS7C4F30L SO-8 MECHANICAL DATA DIM. MIN. A a1 a2 a3 b b1 C c1 D E e e3 F L M S 3.8 0.4 4.8 5.8 1.27 3.81 4.0 1.27 0.6 8 (max.) 0.14 0.015 5.0 6.2 0.65 0.35 0.19 0.25 0.1 mm TYP. MAX. 1.75 0.25 1.65 0.85 0.48 0.25 0.5 45 (typ.) 0.188 0.228 0.050 0.150 0.157 0.050 0.023 0.196 0.244 0.025 0.013 0.007 0.010 0.003 MIN. inch TYP. MAX. 0.068 0.009 0.064 0.033 0.018 0.010 0.019 0016023 9/10 STS7C4F30L Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is registered trademark of STMicroelectronics (R) 2001 STMicroelectronics - All Rights Reserved All other names are the property of their respective owners. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com 10/10 |
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