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Advance Product Information Feb 4, 2000 33-36 GHz 2W Power Amplifier TGA1141 Key Features * 0.25 um pHEMT Technology * 17 dB Nominal Gain * 31 dBm Pout @ P1dB, * Psat 33dBm @ 6V , 34dBm @7V * Bias 6 - 7V @ 1.5A Primary Applications * Military Radar Systems * Ka Band Sat-Com * Point-to-Point Radio Chip Dimensions 4.13 mm x 3.3 mm ( ) Wafer Lot 9918802-1, -2, -3, +6V, ~ 880mA 22 20 Small-signal Gain (dB) 18 Performance Summary Table Description Performance Evaluation Fixtured with Flare TFNs 33 to 36 GHz > 17 dB nom, 34 - 35.2 GHz > 17 dB nom, 33 - 36 GHz ~ 5 dB nom, 34 - 35.2 GHz ~ 5 dB nom. 33 - 36 GHz > 8 dB nom, 34 - 35.2 GHz > 7 dB nom, 33 - 36 GHz 32.3dBm min. 34 -35.2 GHz 31.5dBm min, 34 - 35.2 GHz over temp. > 20% +25C Tested under -26, +25, & +100C Predict: -43C < 1.5 A max over operating frequency and Temp. range +6V 4.134 mm x 3.300 mm 2 13.6mm 16 14 Frequency range Small signal gain Input return loss 30 32 34 36 38 40 12 10 Frequency (GHz) Output return loss Output power 35 34 33 32 Pout (dBm) 31 30 29 28 27 26 25 32 33 34 35 Frequency (GHz) 36 37 P1dB_ave Psat_ave PAE Operating temperature range Ids Vds Die size Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice TriQuint Semiconductor Texas : Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com 1 Advance Product Information Feb 4, 2000 TGA1141 Measured Average Small Signal Data ( ) Wafer Lot 9918802-1, -2, -3, +6V, ~ 880mA 22 20 Small-signal Gain (dB) 18 S21 16 14 12 10 30 32 34 36 38 40 Frequency (GHz) ( ) Wafer Lot 9918802-1, -2, -3, +6V, ~ 880mA 0 -2 Input & Output Return Loss (dB) -4 -6 S11 -8 -10 -12 -14 30 32 34 36 38 40 Frequency (GHz) S22 S11,S22 Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice. 2 TriQuint Semiconductor Texas : Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com Advance Product Information Feb 4, 2000 Measured Power Data 35 34 TGA1141 Pout Pout (dBm) 33 32 31 30 29 28 27 26 25 32 33 34 35 Frequency (GHz) ) 36 37 P1dB_ave Psat_ave ( 30 28 PAE PAE (%) 26 24 22 20 18 16 14 12 10 32 33 34 35 36 37 Frequency (GHz) 35 34.5 PAE@P1dB PAE@Psat Psat vs Vd Pout (dBm) 34 33.5 33 32.5 32 31.5 31 30.5 30 32 33 34 35 36 37 Frequency (GHz) +6V +7V Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice. TriQuint Semiconductor Texas : Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com 3 Advance Product Information Feb 4, 2000 TGA1141 ( ) Pout, Gain vs. Pin at -26C, +25C and +100C w9918802-1 Dev 2505: 34.0GHz +6V 35 33 31 29 Pout (dBm) 27 25 23 21 19 17 15 0 5 10 m) Pin (dB 15 20 25 20 19 18 17 Gain (dB) 16 15 14 13 12 11 10 P +25C out P +100C out P -26C out G +25C ain G +100C ain G -26C ain Pout vs. Temperature Data Summary Matrix: T= -26C T= +25C T= +100C Freq (GHz) min Pout mean Pout min Pout mean Pout min Pout mean Pout 34 33 33 32.7 32.8 31.9 32 34.6 32.8 32.9 32.5 32.6 31.7 31.8 35.2 32.5 32.7 32.3 32.4 31.5 31.6 Ave. Pout (dBm) 32.8 32.9 32.5 32.6 31.7 31.8 Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice. TriQuint Semiconductor Texas : Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com 4 Advance Product Information Feb 4, 2000 TGA1141 Chip Assembly and Bonding Diagram GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice. TriQuint Semiconductor Texas : Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com 5 Advance Product Information Feb 4, 2000 Assembly Process Notes Reflow process assembly notes: *= *= *= *= *= AuSn (80/20) solder with limited exposure to temperatures at or above 300C alloy station or conveyor furnace with reducing atmosphere no fluxes should be utilized coefficient of thermal expansion matching is critical for long-term reliability storage in dry nitrogen atmosphere Component placement and adhesive attachment assembly notes: *= *= *= *= *= *= *= vacuum pencils and/or vacuum collets preferred method of pick up avoidance of air bridges during placement force impact critical during auto placement organic attachment can be used in low-power applications curing should be done in a convection oven; proper exhaust is a safety concern microwave or radiant curing should not be used because of differential heating coefficient of thermal expansion matching is critical Interconnect process assembly notes: *= *= *= *= *= thermosonic ball bonding is the preferred interconnect technique force, time, and ultrasonics are critical parameters aluminum wire should not be used discrete FET devices with small pad sizes should be bonded with 0.0007-inch wire maximum stage temperature: 200C GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice. TriQuint Semiconductor Texas : Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com 6 |
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