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| Ordering number : ENN7551 TT2190LS NPN Triple Diffused Planar Silicon Transistor TT2190LS Color TV Horizontal Deflection Output Applications Features * * * * * Package Dimensions unit : mm 2079D [TT2190LS] 10.0 3.2 3.5 7.2 4.5 2.8 High speed. High breakdown voltage (VCBO=1500V). High reliability (Adoption of HVP process). Adoption of MBIT process. On-chip damper diode. 16.1 16.0 3.6 0.9 1.2 14.0 1.2 0.75 0.7 123 2.4 1 : Base 2 : Collector 3 : Emitter SANYO : TO-220FI(LS) Specifications Absolute Maximum Ratings at Ta=25C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Tc=25C Conditions 2.55 2.55 0.6 Ratings 1500 800 6 8 20 2.0 35 150 --55 to +150 Unit V V V A A W W C C Electrical Characteristics at Ta=25C Parameter Collector Cutoff Current Collector Cutoff Current Collector Sustain Voltage Emitter Cutoff Current Symbol ICBO ICES VCEO(sus) IEBO Conditions VCB=800V, IE=0 VCE=1500V, RBE=0 IC=100mA, IB=0 VEB=4V, IC=0 Ratings min typ max 10 1.0 800 40 130 Unit A mA V mA Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 31504 TS IM TA-100589 No.7551-1/4 TT2190LS Continued from preceding page. Parameter Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage DC Current Gain Diode Forward Voltage Fall Time Symbol VCE(sat) VBE(sat) hFE1 hFE2 VF tf Conditions IC=4.5A, IB=0.9A IC=4.5A, IB=0.9A VCE=5V, IC=1A VCE=5V, IC=5A IEC=7A IC=3A, IB1=0.6A, IB2=--1.2A 10 5 8 2 0.3 V s Ratings min typ max 3 1.5 Unit V V Switching Time Test Circuit PW=20s D.C.1% INPUT IB1 IB2 VR 50 + 100F VBE= --5V + 470F VCC=200V RB OUTPUT RL 66.7 8 7 IC -- VCE 2.0 A 9 8 IC -- VBE VCE=5V 1.8A Collector Current, IC -- A Collector Current, IC -- A 6 5 4 3 2 1.6A 1.4A 1.2A 1.0A 0.8A 0.6A 0.4A 0.2A 7 6 5 4 3 1 0 0 1 2 3 4 5 6 7 8 1 IB=0 9 10 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 IT01801 Collector-to-Emitter Voltage, VCE -- V 5 3 2 IT01800 5 hFE -- IC Base-to-Emitter Voltage, VBE -- V VCE(sat) -- IC Ta= 1 0.05A 25 C -40C 2 20 C VCE=5V Collector-to-Emitter Saturation Voltage, VCE(sat) -- V IC / IB=5 C Ta= --4 25C 0C Ta=--40 DC Current Gain, hFE = Ta 12 2 1.0 7 5 3 2 10 7 5 3 2 -4 C 0 0.1 7 5 120C 2 3 5 7 1.0 2 3 5 7 10 IT01803 1.0 0.1 2 3 5 7 1.0 2 3 5 Collector Current, IC -- A 7 10 IT01802 3 0.1 Collector Current, IC -- A No.7551-2/4 25C 25 C 120C 0C 3 TT2190LS 7 5 SW Time -- IC tstg Switching Time, SW Time -- s Switching Time, SW Time -- s 3 2 VCC=200V IC / IB1=5 IB2 / IB1=2 R load 10 7 5 3 2 SW Time -- IB2 VCC=200V IC=3A IB1=0.6A R load ts tg 1.0 7 5 3 2 1.0 7 5 3 2 tf tf 0.1 0.1 2 3 5 7 1.0 2 3 5 5 3 2 Forward Bias A S O ICP=20A IC=8A Collector Current, IC -- A 10 IT01804 7 0.1 0.1 2 3 5 7 1.0 2 3 5 7 5 3 2 Reverse Bias A S O L=500 H IB2=--1A Tc=25C Single pulse Base Current, IB2 -- A IT01805 s 00 =1 s PT 0 30 Collector Current, IC -- A 3 2 1.0 7 5 3 2 0.1 7 5 3 2 0.01 P C =3 Collector Current, IC -- A 10 7 5 5W 10 7 5 3 2 1.0 7 5 3 2 0.1 1m er s 10m DC s ati on op Tc=25C Single pulse 2 3 5 7 10 2 3 5 7 100 2 3 1.0 Collector-to-Emitter Voltage, VCE -- V 2.5 5 7 1000 IT05398 10 2 3 5 7 100 2 3 5 7 1000 2 3 PC -- Ta Collector-to-Emitter Voltage, VCE -- V 40 35 IT01807 PC -- Tc Collector Dissipation, PC -- W 2.0 Collector Dissipation, PC -- W 120 140 160 30 1.5 No he at 20 1.0 sin k 10 0.5 0 0 20 40 60 80 100 0 0 20 40 60 80 100 120 140 160 Ambient Temperature, Ta -- C IT01808 Case Temperature, Tc -- C IT01809 No.7551-3/4 TT2190LS Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of March, 2004. Specifications and information herein are subject to change without notice. PS No.7551-4/4 |
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