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Up to 6 GHz Medium Power Silicon Bipolar Transistor Technical Data
AT-42086
Features
* High Output Power: 20.5 dBm Typical P1 dB at 2.0 GHz * High Gain at 1 dB Compression: 13.5 dB Typical G1 dB at 2.0 GHz * Low Noise Figure: 1.9 dB Typical NFO at 2.0 GHz * High Gain-Bandwidth Product: 8.0 GHz Typical fT * Surface Mount Plastic Package * Tape-and-Reel Packaging Option Available[1]
BASE 1
420
plastic package. The 4 micron emitter-to-emitter pitch enables this transistor to be used in many different functions. The 20 emitter finger interdigitated geometry yields a medium sized transistor with impedances that are easy to match for low noise and medium power applications. Applications include use in wireless systems as an LNA, gain stage, buffer, oscillator, and mixer. An optimum noise match near 50 up to 1 GHz, makes this device easy to use as a low noise amplifier. The AT-42086 bipolar transistor is fabricated using Hewlett- Packard's 10 GHz fT Self-Aligned-Transistor (SAT) process. The die is nitride passivated for surface protection. Excellent device uniformity, performance and reliability are produced by the use of ionimplantation, self-alignment techniques, and gold metalization in the fabrication of this device.
86 Plastic Package
Pin Connections
EMITTER 4
COLLECTOR 3
Description
Hewlett-Packard's AT-42086 is a general purpose NPN bipolar transistor that offers excellent high frequency performance. The AT-42086 is housed in a low cost surface mount .085" diameter
Note:
1. Refer to PACKAGING section "Tapeand-Reel Packaging for Semiconductor Devices."
2 EMITTER
5965-8914E
4-174
AT-42086 Absolute Maximum Ratings
Symbol VEBO VCBO VCEO IC PT Tj TSTG Parameter Emitter-Base Voltage Collector-Base Voltage Collector-Emitter Voltage Collector Current Power Dissipation [2,3] Junction Temperature Storage Temperature Units V V V mA mW C C Absolute Maximum[1] 1.5 20 12 80 500 150 -65 to 150 Thermal Resistance [2,4]: jc = 140C/W
Notes: 1. Permanent damage may occur if any of these limits are exceeded. 2. TCASE = 25C. 3. Derate at 7.1 mW/C for TC > 80C. 4. See MEASUREMENTS section "Thermal Resistance" for more information.
Part Number Ordering Information
Part Number AT-42086-BLK AT-42086-TR1 Increment 100 1000 Comments Bulk Reel
Note: For more information, see "Tape and Reel Packaging for Semiconductor Devices".
Electrical Specifications, TA = 25C
Symbol |S21E|2 Parameters and Test Conditions Insertion Power Gain; VCE = 8 V, IC = 35 mA f = 1.0 GHz f = 2.0 GHz f = 4.0 GHz f = 2.0 GHz f= 4.0 GHz f = 2.0 GHz f = 4.0 GHz f = 2.0 GHz f = 4.0 GHz f = 2.0 GHz f = 4.0 GHz Units dB Min. 15.0 Typ. Max. 16.5 10.5 4.5 20.5 20.0 13.5 9.0 1.9 3.5 13.0 9.0 8.0 30 150 270 0.2 2.0
P1 dB G1 dB NFO GA fT hFE ICBO IEBO CCB
Power Output @ 1 dB Gain Compression VCE = 8 V, IC = 35 mA 1 dB Compressed Gain; VCE = 8 V, IC = 35 mA Optimum Noise Figure: VCE = 8 V, IC = 10 mA Gain @ NFO; VCE = 8 V, IC = 10 mA Gain Bandwidth Product: VCE = 8 V, IC = 35 mA Forward Current Transfer Ratio; VCE = 8 V, IC = 35 mA Collector Cutoff Current; VCB = 8 V Emitter Cutoff Current; VEB = 1 V Collector Base Capacitance[1]: VCB = 8 V, f = 1 MHz
dBm dB dB dB GHz -- A A pF
0.32
Note: 1. For this test, the emitter is grounded.
4-175
AT-42086 Typical Performance, TA = 25C
24 20
2.0 GHz 1.0 GHz
40 35 30
MSG
P1 dB (dBm)
20
4.0 GHz
16
|S21E|2 GAIN (dB)
16
12
2.0 GHz
GAIN (dB)
P1dB
25 20 15 10 5
MAG |S21E|2
12
2.0 GHz
8
4.0 GHz
G1 dB (dB)
G1dB
8
4.0 GHz
4
4
0
10
20
30 IC (mA)
40
50
0
0 0 10 20 30 IC (mA) 40 50 0.1 0.3 0.5 1.0 3.0 6.0 FREQUENCY (GHz)
Figure 1. Output Power and 1 dB Compressed Gain vs. Collector Current and Frequency. VCE = 8 V.
Figure 2. Insertion Power Gain vs. Collector Current and Frequency. VCE = 8 V.
Figure 3. Insertion Power Gain, Maximum Available Gain and Maximum Stable Gain vs. Frequency. VCE = 8 V, IC = 35 mA.
24 21 18
GA
GAIN (dB)
15 12 9 6 3 0 0.5 1.0 2.0
NFO
4 3 2 1 0 3.0 4.0 5.0
FREQUENCY (GHz)
Figure 4. Noise Figure and Associated Gain vs. Frequency. VCE = 8 V, IC = 10mA.
NFO (dB)
4-176
AT-42086 Typical Scattering Parameters,
Common Emitter, ZO = 50 , TA = 25C, VCE = 8 V, IC = 10 mA Freq. S11 S21 GHz Mag. Ang. dB Mag. Ang. 0.1 .68 -48 28.0 25.12 153 0.5 .63 -141 20.9 11.07 102 1.0 .63 -176 15.4 5.87 80 1.5 .65 164 12.0 3.98 65 2.0 .66 151 9.5 2.99 53 2.5 .69 142 7.8 2.44 45 3.0 .71 132 6.2 2.04 34 3.5 .73 123 4.8 1.74 24 4.0 .75 115 3.6 1.51 14 4.5 .78 108 2.6 1.34 5 5.0 .80 101 1.6 1.20 -4 5.5 .82 95 0.6 1.08 -12 6.0 .85 89 -0.2 0.97 -21
dB -36.0 -29.9 -27.4 -26.0 -23.9 -23.1 -21.6 -19.7 -18.3 -17.2 -16.0 -14.8 -14.0
S12 Mag. .016 .032 .043 .050 .064 .070 .084 .104 .122 .138 .159 .182 .200
S22 Ang. 65 42 43 46 52 53 54 53 51 50 46 40 35 Mag. .91 .54 .43 .40 .38 .36 .34 .33 .30 .31 .31 .32 .34 Ang. -15 -30 -30 -34 -40 -46 -54 -67 -80 -94 -110 -129 -148
AT-42086 Typical Scattering Parameters,
Common Emitter, ZO = 50 , TA = 25C, VCE = 8 V, IC = 35 mA Freq. S11 S21 GHz Mag. Ang. dB Mag. Ang. 0.1 .48 -94 32.8 43.62 137 0.5 .57 -168 22.4 13.21 92 1.0 .59 168 16.5 6.69 75 1.5 .61 154 13.0 4.48 62 2.0 .63 143 10.5 3.36 51 2.5 .68 137 8.7 2.72 43 3.0 .68 127 7.0 2.25 33 3.5 .71 118 5.7 1.92 24 4.0 .73 111 4.5 1.69 14 4.5 .76 104 3.5 1.49 5 5.0 .78 98 2.4 1.32 -3 5.5 .81 91 1.6 1.20 -12 6.0 .84 85 0.7 1.08 -20
A model for this device is available in the DEVICE MODELS section.
dB -37.7 -32.6 -28.7 -24.8 -23.0 -21.0 -19.7 -18.4 -17.3 -15.9 -15.2 -14.3 -13.4
S12 Mag. .013 .023 .037 .057 .071 .089 .104 .121 .136 .161 .174 .193 .213
S22 Ang. 65 57 62 64 61 56 58 55 49 46 43 36 31 Mag. .77 .39 .33 .31 .29 .26 .25 .24 .20 .21 .21 .22 .25 Ang. -25 -28 -27 -31 -37 -45 -53 -65 -80 -95 -115 -136 -156
AT-42086 Noise Parameters: VCE = 8 V, IC = 10 mA
Freq. GHz 0.1 0.5 1.0 2.0 4.0 NFO dB 1.0 1.1 1.5 1.9 3.5 opt Mag .04 .03 .06 .25 .58 Ang 8 62 168 -146 -100 RN/50 0.13 0.12 0.12 0.12 0.52
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86 Plastic Package Dimensions
0.51 0.13 (0.020 0.005) 4
45 1 C L 3 2.34 0.38 (0.092 0.015) 2 2.67 0.38 (0.105 0.15) 0.203 0.051 (0.006 0.002)
1.52 0.25 (0.060 0.010)
5 TYP.
0.66 0.013 (0.026 0.005) 0.30 MIN (0.012 MIN)
8 MAX 0 MIN 2.16 0.13 (0.085 0.005)
DIMENSIONS ARE IN MILLIMETERS (INCHES)
4-178

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