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| MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF392/D The RF Line NPN Silicon Push-Pull RF Power Transistor Designed primarily for wideband large-signal output and driver amplifier stages in the 30 to 500 MHz frequency range. * Specified 28 Volt, 400 MHz Characteristics -- Output Power = 125 W Typical Gain = 10 dB Efficiency = 55% (Typ) * Built-In Input Impedance Matching Networks for Broadband Operation * Push-Pull Configuration Reduces Even Numbered Harmonics * Gold Metallization System for High Reliability * 100% Tested for Load Mismatch * Circuit board photomaster available upon request by contacting RF Tactical Marketing in Phoenix, AZ. 2 6 5, 8 7 3 1, 4 MRF392 125 W, 30 to 500 MHz CONTROLLED "Q" BROADBAND PUSH-PULL RF POWER TRANSISTOR NPN SILICON CASE 744A-01, STYLE 1 The MRF392 is two transistors in a single package with separate base and collector leads and emitters common. This arrangement provides the designer with a space saving device capable of operation in a push-pull configuration. PUSH-PULL TRANSISTORS MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current -- Continuous Total Device Dissipation @ TC = 25C (1) Derate above 25C Storage Temperature Range Junction Temperature Symbol VCEO VCBO VEBO IC PD Tstg TJ Value 30 60 4.0 16 270 1.54 - 65 to +150 200 Unit Vdc Vdc Vdc Adc Watts W/C C C THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Symbol RJC Max 0.65 Unit C/W NOTE: 1. This device is designed for RF operation. The total device dissipation rating applies only when the device is operated as an RF push-pull amplifier. REV 8 (c)MOTOROLA RF DEVICE DATA Motorola, Inc. 1997 MRF392 1 ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS (1) Collector-Emitter Breakdown Voltage (IC = 50 mAdc, IB = 0) Collector-Emitter Breakdown Voltage (IC = 50 mAdc, VBE = 0) Emitter-Base Breakdown Voltage (IE = 5.0 mAdc, IC = 0) Collector Cutoff Current (VCB = 30 Vdc, IE = 0) V(BR)CEO V(BR)CES V(BR)EBO ICBO 30 60 4.0 -- -- -- -- -- -- -- -- 5.0 Vdc Vdc Vdc mAdc ON CHARACTERISTICS (1) DC Current Gain (IC = 1.0 Adc, VCE = 5.0 Vdc) hFE 40 60 100 -- DYNAMIC CHARACTERISTICS (1) Output Capacitance (VCB = 28 Vdc, IE = 0, f = 1.0 MHz) Cob -- 75 95 pF FUNCTIONAL TESTS (2) -- See Figure 1 Common-Emitter Amplifier Power Gain (VCC = 28 Vdc, Pout = 125 W, f = 400 MHz) Collector Efficiency (VCC = 28 Vdc, Pout = 125 W, f = 400 MHz) Load Mismatch (VCC = 28 Vdc, Pout = 125 W, f = 400 MHz, VSWR = 30:1, all phase angles) NOTES: 1. Each transistor chip measured separately. 2. Both transistor chips operating in push-pull amplifier. L5 C11 C12 C13 + C14 C15 + 28 V - Gpe No Degradation in Output Power 8.0 50 10 55 -- -- dB % B1 C1 Z1 C3 Z1 C2 Z2 C4 Z2 L1 Z4 L3 C9 Z5 C7 Z5 L4 Z6 C8 Z6 C10 B2 Z3 C5 Z3 C6 Z4 L2 D.U.T. L6 C16 C17 C18 C19 C1, C2 -- 240 pF, 100 Mil Chip Cap (ATC) or Equivalent C3 -- 3.6 pF, 100 Mil Chip Cap (ATC) or Equivalent C4, C8 -- 8.2 pF, 100 Mil Chip Cap (ATC) or Equivalent C5, C6 -- 20 pF, 100 Mil Chip Cap (ATC) or Equivalent C7 -- 18 pF, Mini Unelco or Equivalent C9, C10 -- 270 pF, 100 Mil Chip Cap (ATC) or Equivalent C11, C12, C16, C17 -- 470 pF 100 Mil Chip Cap (ATC) or Equivalent C13, C18 -- 680 pF Feedthru C14, C19 -- 0.1 F Erie Redcap or Equivalent C15 -- 20 F, 50 V L1, L2 -- 0.15 H Molded Choke With Ferrite Bead L3, L4 -- 2-1/2 Turns #20 AWG, 0.200 ID L5, L6 -- 3-1/2 Turns #18 AWG, 0.200 ID B1 -- Balun, 50 Semi-Rigid Coaxial Cable 86 Mil OD, 2 L B2 -- Balun, 50 Semi-Rigid Coaxial Cable 86 Mil OD, 2 L Z1 -- Microstrip Line 270 Mil L x 125 Mil W Z2 -- Microstrip Line 375 Mil L x 125 Mil W Z3 -- Microstrip Line 280 Mil L x 125 Mil W Z4 -- Microstrip Line 300 Mil L x 125 Mil W Z5 -- Microstrip Line 350 Mil L x 125 Mil W Z6 -- Microstrip Line 365 Mil L x 125 Mil W Board Material -- 0.0625 Teflon Fiberglass r = 2.5 0.05 1 oz. Cu. Board Material -- CLAD, Double Sided Figure 1. 400 MHz Test Fixture MRF392 2 MOTOROLA RF DEVICE DATA 160 Pout , OUTPUT POWER (WATTS) Pout , OUTPUT POWER (WATTS) 140 120 100 80 60 40 20 0 0 5 10 15 VCC = 28 V f = 100 MHz 225 MHz 400 MHz 500 MHz 80 70 60 50 40 30 20 10 25 0 0 2 4 6 8 10 12 14 VCC = 13.5 V f = 100 MHz 225 MHz 400 MHz 20 16 18 20 Pin, INPUT POWER (WATTS) Pin, INPUT POWER (WATTS) Figure 2. Output Power versus Input Power 160 Pin = 10 W Pout , OUTPUT POWER (WATTS) 120 100 80 60 40 20 0 10 12 14 16 18 20 22 24 f = 225 MHz 26 28 30 7W 5W Pout , OUTPUT POWER (WATTS) 140 140 120 100 80 60 40 20 0 10 160 Figure 3. Output Power versus Input Power Pin = 14 W 10 W 7W f = 400 MHz 12 14 16 18 20 22 24 26 28 30 VCC, SUPPLY VOLTAGE (VOLTS) VCC, SUPPLY VOLTAGE (VOLTS) Figure 4. Output Power versus Supply Voltage Figure 5. Output Power versus Supply Voltage Zin & ZOL* are given from base-to-base and collector-to-collector respectively. f = 100 MHz 500 CAPACITIVE REACTANCE COMPONENT (-jX) 225 400 ZOL* 225 500 450 Zin 450 400 INDUCTIVE REACTANCE COMPONENT (+jX) VCC = 28 V, Pout = 125 W f = 100 MHz f MHz 100 225 400 450 500 Zin OHMS 0.72 + j0.44 0.72 + j2.62 3.88 + j5.72 3.84 + j2.8 1.26 + j3.01 ZOL* OHMS 9.0 - j6.0 5.2 - j1.8 3.6 + j0.53 3.2 + j1.2 3.0 + j2.0 Zo = 20 ZOL* = Conjugate of the optimum load impedance ZOL* = into which the device output operates at a ZOL* = given output power, voltage and frequency. Figure 6. Series Equivalent Input/Output Impedance MOTOROLA RF DEVICE DATA MRF392 3 PACKAGE DIMENSIONS U Q 0.76 (0.030) M 4 PL NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. DIM A B C D E F G H J K L M N Q R U V MILLIMETERS MIN MAX 22.60 23.11 9.52 10.03 6.65 7.16 1.60 1.95 2.94 3.40 2.87 3.22 16.51 BSC 4.01 4.36 0.07 0.15 4.34 4.90 12.45 12.95 45_NOM 1.051 11.02 3.04 3.35 9.90 10.41 1.02 1.27 0.64 0.89 INCHES MIN MAX 0.890 0.910 0.375 0.395 0.262 0.282 0.063 0.077 0.116 0.134 0.113 0.127 0.650 BSC 0.158 0.172 0.003 0.006 0.171 0.193 0.490 0.510 45_NOM 0.414 0.434 0.120 0.132 0.390 0.410 0.040 0.050 0.025 0.035 M B M 1 2 3 4 A M K R -B- 5 6 7 8 K D 4 PL F V L G -A- J N 4 PL 2 PL H C E -T- SEATING PLANE STYLE 1: PIN 1. 2. 3. 4. 5. 6. 7. 8. EMITTER (COMMON) COLLECTOR COLLECTOR EMITTER (COMMON) EMITTER (COMMON) BASE BASE EMITTER (COMMON) CASE 744A-01 ISSUE C Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters can and do vary in different applications. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. How to reach us: USA / EUROPE: Motorola Literature Distribution; P.O. Box 20912; Phoenix, Arizona 85036. 1-800-441-2447 MFAX: RMFAX0@email.sps.mot.com - TOUCHTONE (602) 244-6609 INTERNET: http://Design-NET.com JAPAN: Nippon Motorola Ltd.; Tatsumi-SPD-JLDC, Toshikatsu Otsuki, 6F Seibu-Butsuryu-Center, 3-14-2 Tatsumi Koto-Ku, Tokyo 135, Japan. 03-3521-8315 HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852-26629298 MRF392 4 *MRF392/D* MRF392/D MOTOROLA RF DEVICE DATA |
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