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MITSUBISHI SEMICONDUCTOR MITSUBISHI SEMICONDUCTOR
PS21255-E PS21255-E
TRANSFER-MOLD TYPE TRANSFER-MOLD TYPE INSULATED TYPE INSULATED TYPE
PS21255-E
INTEGRATED POWER FUNCTIONS
4th generation (planar) IGBT inverter bridge for 3 phase DC-to-AC power conversion.
INTEGRATED DRIVE, PROTECTION AND SYSTEM CONTROL FUNCTIONS
* For upper-leg IGBTS : Drive circuit, High voltage isolated high-speed level shifting, Control circuit under-voltage (UV) protection. Note : Bootstrap supply scheme can be applied. * For lower-leg IGBTS : Drive circuit, Control circuit under-voltage protection (UV), Short circuit protection (SC). * Fault signaling : Corresponding to a SC fault (Low-side IGBT) or a UV fault (Low-side supply). * Input interface : 5V line CMOS/TTL compatible, Schmitt Trigger receiver circuit.
APPLICATION AC100V~200V three-phase inverter drive for small power motor control.
Fig. 1 PACKAGE OUTLINES
Dimensions in mm
27x2.8(=75.6)
3~5
2.80.3
TERMINAL CODE 1 2 3 4 5 6 7 8 9 10 11 12 13
Irrgulor solder remains 0.5MAX
21.40.5
12
34
56
78
9 10 11
12 13
14 15 16 17 18 19 20 21
Type name , Lot No.
11.50.5
0 4.5 2- .2
22
23
24
25
26
A 100.3 100.3 100.3 670.3 790.5 B C
161 or 12.81
200.3
3.80.2
UP VP1 VUFB VUFS VP VP1 VVFB VVFS WP VP1 VPC VWFB VWFS
14 15 16 17 18 19 20 21 22 23 24 25 26
VN1 VNC CIN CFO FO UN VN WN P U V W N
310.5
13.40.5
280.5
1.90.05 10.2
0.60.5
Irrgulor solder remains 0.5MAX
1.75MAX 0.80.2
0.60.5
80.5
0.50.2
(71) HEAT SINK SIDE Detail A
3.25MAX Detail B (t=0.7)
45
Detail C (t=0.7)
Sep. 2001
MITSUBISHI SEMICONDUCTOR
PS21255-E
TRANSFER-MOLD TYPE INSULATED TYPE
Fig. 2 INTERNAL FUNCTIONS BLOCK DIAGRAM (TYPICAL APPLICATION EXAMPLE)
CBW+
CBW-
CBV+ CBV-
CBU-
CBU+
C3 : Tight tolerance, temp-compensated electrolytic type (Note : The capacitance value depends on the PWM control scheme used in the applied system). C4 : 0.22~2F R-category ceramic capacitor for noise filtering.
High-side input (PWM) (5V line) (Note 1,2)
Input signal Input signal Input signal coditioning coditioning coditioning Level shifter Level shifter Level shifter
Protection circuit (UV)
Bootstrap circuit
For detailed description of the boot-strap circuit construction, please contact Mitsubishi Electric
C4 C3
Protection circuit (UV)
Protection circuit (UV)
(Note 6)
DIP-IPM
Inrush current limiter circuit
Drive circuit Drive circuit Drive circuit
P
AC line input
H-side IGBTS
(Note 4)
U V W
M
AC line output
C Z
Fig. 3
N1
VNC
N CIN
Drive circuit L-side IGBTS
Z : ZNR (Surge absorber) C : AC filter (Ceramic capacitor 2.2~6.5nF) (Note : Additionally, an appropriate line-to line surge absorber circuit may become necessary depending on the application environment).
Input signal conditioning
Fo logic
Protection circuit
Control supply Under-Voltage protection
FO CFO Low-side input (PWM) (5V line) (Note 1, 2) Fault output (5V line) (Note 3, 5)
Note1: 2: 3: 4:
5: 6:
To prevent the input signals oscillation, an RC coupling at each input is recommended. (see also Fig. 6) By virtue of integrating an application specific type HVIC inside the module, direct coupling to CPU terminals without any opto-coupler or transformer isolation is possible. (see also Fig. 6) This output is open collector type. The signal line should be pulled up to the positive side of the 5V power supply with approximately 5.1k resistance. (see also Fig. 6) The wiring between the power DC link capacitor and the P/N1 terminals should be as short as possible to protect the DIP-IPM against catastrophic high surge voltages. For extra precaution, a small film type snubber capacitor (0.1~0.22F, high voltage type) is recommended to be mounted close to these P and N1 DC power input pins. Fo output pulse width should be decided by putting external capacitor between CFO and VNC terminals. (Example : CFO=22nF tFO=1.8ms (Typ.)) High voltage (600V or more) and fast recovery type (less than 100ns) diodes should be used in the bootstrap circuit.
VNC VD (15V line)
Fig. 3 EXTERNAL PART OF THE DIP-IPM PROTECTION CIRCUIT
DIP-IPM
Drive circuit
P
Short Circuit Protective Function (SC) : SC protection is achieved by sensing the L-side DC-Bus current (through the external shunt resistor) after allowing a suitable filtering time (defined by the RC circuit). When the sensed shunt voltage exceeds the SC trip-level, all the L-side IGBTs are turned OFF and a fault signal (Fo) is output. Since the SC fault may be repetitive, it is recommended to stop the system when the Fo signal is received and check the fault.
IC (A)
SC Protection Trip Level
H-side IGBTS
U V W
L-side IGBTS
External protection circuit N1
Shunt Resistor (Note 1)
A
N VNC CIN B
Drive circuit
Collector current waveform
CR
C
Protection circuit
(Note 2)
0 2 tw (s)
Note1: In the recommended external protection circuit, please select the RC time constant in the range 1.5~2.0s. 2: To prevent erroneous protection operation, the wiring of A, B, C should be as short as possible.
Sep. 2001
MITSUBISHI SEMICONDUCTOR
PS21255-E
TRANSFER-MOLD TYPE INSULATED TYPE
MAXIMUM RATINGS (Tj = 25C, unless otherwise noted) INVERTER PART
Symbol VCC VCC(surge) VCES IC ICP PC Tj Parameter Supply voltage Supply voltage (surge) Collector-emitter voltage Each IGBT collector current Each IGBT collector current (peak) Collector dissipation Junction temperature Condition Applied between P-N Applied between P-N TC = 25C TC = 25C, instantaneous value (pulse) TC = 25C, per 1 chip (Note 1) Ratings 450 500 600 20 40 56 -20~+150 Unit V V V A A W C
Note 1 : The maximum junction temperature rating of the power chips integrated within the DIP-IPM is 150C (@ TC 100C) however, to ensure safe operation of the DIP-IPM, the average junction temperature should be limited to Tj(ave) 125C (@ TC 100C).
CONTROL (PROTECTION) PART
Symbol VD VDB VCIN VFO IFO VSC Parameter Control supply voltage Control supply voltage Input voltage Fault output supply voltage Fault output current Current sensing input voltage Condition Applied between VP1-VPC, VN1-VNC Applied between VUFB-VUFS, VVFB-VVFS, VWFB-VWFS Applied between UP, VP, WP-VPC, UN, VN, WN-VNC Applied between FO-VNC Sink current at FO terminal Applied between CIN-VNC Ratings 20 20 -0.5~+5.5 -0.5~VD+0.5 15 -0.5~VD+0.5 Unit V V V V mA V
TOTAL SYSTEM
Symbol Parameter VCC(PROT) Self protection supply voltage limit (short circuit protection capability) Module case operation temperature TC Tstg Viso Storage temperature Isolation voltage 60Hz, Sinusoidal, AC 1 minute, connection pins to heat-sink plate Condition VD = 13.5~16.5V, Inverter part Tj = 125C, non-repetitive, less than 2 s (Note 2) Ratings 400 -20~+100 -40~+125 1500 Unit V C C Vrms
Note 2 : TC MEASUREMENT POINT
Control Terminals
DIP-IPM
Heat sink boundary Heat sink Tc
Tc Power Terminals
Sep. 2001
MITSUBISHI SEMICONDUCTOR
PS21255-E
TRANSFER-MOLD TYPE INSULATED TYPE
THERMAL RESISTANCE
Symbol Rth(j-c)Q Rth(j-c)F Rth(c-f) Parameter Junction to case thermal resistance Contact thermal resistance Condition Inverter IGBT part (per 1/6 module) Inverter FWD part (per 1/6 module) Case to fin, (per 1 module) thermal grease applied Limits Min. -- -- -- Typ. -- -- -- Max. 2.2 4.5 0.067 Unit C/W C/W C/W
ELECTRICAL CHARACTERISTICS (Tj = 25C, unless otherwise noted) INVERTER PART
Symbol VCE(sat) VEC ton trr tc(on) toff tc(off) ICES Parameter Collector-emitter saturation voltage FWD forward voltage Condition IC = 20A, Tj = 25C VD = VDB = 15V VCIN = 0V IC = 20A, Tj = 125C Tj = 25C, -IC = 20A, VCIN = 5V VCC = 300V, VD = VDB = 15V IC = 20A, Tj = 125C, VCIN = 5V 0V Inductive load (upper-lower arm) Collector-emitter cut-off current Tj = 25C Tj = 125C Min. -- -- -- 0.10 -- -- -- -- -- -- Limits Typ. 1.80 1.90 2.20 0.80 0.10 0.50 0.80 0.40 -- -- Max. 2.45 2.60 3.00 1.30 -- 0.90 1.90 1.30 1 10 Unit V V s s s s s mA
Switching times
VCE = VCES
CONTROL (PROTECTION) PART
Symbol VD VDB ID VFOH VFOL VFOsat tdead Parameter Control supply voltage Control supply voltage Circuit current Fault output voltage Condition Applied between VP1-VPC, VN1-VNC Applied between VUFB-VUFS, VVFB-VVFS, VWFB-VWFS VD = VDB = 15V, Total of VP1-VPC, VN1-VNC VUFB-VUFS, VVFB-VVFS, VWFB-VWFS VCIN= 5V VSC = 0V, FO = 10k 5V pull-up VSC = 1V, FO = 10k 5V pull-up VSC = 1V, IFO = 15mA Relates to corresponding input signal for blocking arm shoot-through. -20C TC 100C Limits Min. 13.5 13.5 -- -- 4.9 -- 0.8 2.5 Typ. 15.0 15.0 -- -- -- 0.8 1.2 -- Max. 16.5 16.5 8.50 1.00 -- 1.2 1.8 -- Unit V V mA V V V s
Arm shoot-through blocking time
Short circuit trip level (Note 3) Tj = 25C, VD = 15V V VSC(ref) 0.45 0.55 0.5 Trip level UVDBt V 10.0 12.0 -- Reset level Supply circuit under-voltage UVDBr V 10.5 12.5 -- Tj 125C protection Trip level UVDt 10.3 12.5 -- V Reset level UVDr 10.8 13.0 -- V CFO = 22nF (Note 4) Fault output pulse width tFO ms 1.0 -- 1.8 ON threshold voltage 0.8 2.0 1.4 Vth(on) V Applied between : UP, VP, WP-VPC, UN, VN, WN-VNC OFF threshold voltage V 2.5 4.0 3.0 Vth(off) Note 3 : Short circuit protection is functioning only at the low-arms. Please select the value of the external shunt resistor such that the SC triplevel is less than 34 A. 4 : Fault signal is output when the low-arms short circuit or control supply under-voltage protective functions operate. The fault output pulsewidth tFO depends on the capacitance value of CFO according to the following approximate equation : CFO = 12.2 10-6 tFO [F].
Sep. 2001
MITSUBISHI SEMICONDUCTOR
PS21255-E
TRANSFER-MOLD TYPE INSULATED TYPE
MECHANICAL CHARACTERISTICS AND RATINGS
Parameter Mounting torque Terminal pulling strength Bending strength Weight Heat-sink flatness Condition Mounting screw : M4 Weight 19.6N Weight 9.8N. 90deg bend -- EIAJ-ED-4701 EIAJ-ED-4701 -- -- (Note 5) Limits Min. 0.98 10 2 -- -50 Typ. 1.18 -- -- 54 -- Max. 1.47 -- -- -- 100 Unit N*m s times g m
Note 5: Measurement point of heat-sink flatness
(Note 5)
DIP-IPM Measurement point 3mm
Heat sink
Place to contact a heat sink
Heat sink
RECOMMENDED OPERATION CONDITIONS
Symbol VCC VD VDB VD, VDB tdead fPWM VCIN(ON) VCIN(OFF) Parameter Supply voltage Control supply voltage Control supply voltage Control supply variation Arm shoot-through blocking time PWM input frequency Input ON threshold voltage Input OFF threshold voltage Condition Applied between P-N Applied between VP1-VPC, VN1-VNC Applied between VUFB-VUFS, VVFB-VVFS, VWFB-VWFS Relates to corresponding input signal for blocking arm shoot-through TC 100C, Tj 125C Applied between UP, VP, WP-VPC Applied between UN, VN, WN-VNC Min. 0 13.5 13.5 -1 2.5 -- Limits Typ. 300 15.0 15.0 -- -- 15 0~0.65 4.0~5.5 Max. 400 16.5 16.5 1 -- -- Unit V V V V/s s kHz V V
Sep. 2001
MITSUBISHI SEMICONDUCTOR
PS21255-E
TRANSFER-MOLD TYPE INSULATED TYPE
Fig. 4 THE DIP-IPM INTERNAL CIRCUIT
VUFB VUFS VP1 UP
HVIC 1
VCC VB HO VS
DIP-IPM
P IGBT1 Di1
IN COM
U
VVFB VVFS VP1 VP
HVIC 2
VCC VB HO VS
IGBT2
Di2
IN COM
V
VWFB VWFS VP1 WP VPC
HVIC 3
VCC VB HO VS
IGBT3
Di3
IN COM
W IGBT4 Di4
LVIC
UOUT
VN1
VCC
IGBT5
VOUT
Di5
UN VN WN
Fo
UN VN WN Fo GND VNO CIN WOUT
IGBT6
Di6
VNC
CFO
N
CFO
CIN
Sep. 2001
MITSUBISHI SEMICONDUCTOR
PS21255-E
TRANSFER-MOLD TYPE INSULATED TYPE
Fig. 5 TIMING CHARTS OF THE DIP-IPM PROTECTIVE FUNCTIONS [A] Short-Circuit Protection (N-side only)
(For the external shunt resistor and CR connection.) a1. Normal operation : IGBT ON and carrying current. a2. Short circuit current detection (SC trigger). a3. Hard IGBT gate interrupt. a4. IGBT turns OFF. a5. FO timer operation starts : The pulse width of the FO signal is set by the external capacitor CFO. a6. Input "H" : IGBT OFF state. a7. Input "L" : IGBT ON state. a8. IGBT OFF state.
N-side control input Protection circuit state
a6
a7
SET
RESET
Internal IGBT gate
a2 SC a1
a3
a4 a8 SC reference voltage
Output current Ic(A) Sense voltage of the shunt resistor
CR circuit time constant DELAY
Error output Fo
a5
[B] Under-Voltage Protection (N-side, UVD)
a1. Normal operation : IGBT ON and carrying current. a2. Under voltage trip (UVDt). a3. IGBT OFF in spite of control input condition. a4. FO timer operation starts. a5. Under voltage reset (UVDr). a6. Normal operation : IGBT ON and carrying current.
Control input
Protection circuit state
SET UVDr UVDt a2
RESET
Control supply voltage VD
a5
a1 Output current Ic(A)
a3
a6
Error output Fo
a4
Sep. 2001
MITSUBISHI SEMICONDUCTOR
PS21255-E
TRANSFER-MOLD TYPE INSULATED TYPE
[C] Under-Voltage Protection (P-side, UVDB)
a1. Control supply voltage rises : After the voltage level reachs UVDBr, the circuits start to operate when the next input is applied. a2. Normal operation : IGBT ON and carrying current. a3. Under voltage trip (UVDBt). a4. IGBT OFF in spite of control input condition, but there is no FO signal output. a5. Under-voltage reset (UVDBr). a6. Normal operation : IGBT ON and carrying current.
Control input
Protection circuit state UVDBr Control supply voltage VDB
RESET
SET
RESET
a1
UVDBt a2
a5 a3 a4 a6
Output current Ic(A) High-level (no fault output) Error output Fo
Fig. 6 RECOMMENDED CPU I/O INTERFACE CIRCUIT
5V line
DIP-IPM
5.1k 4.7k UP,VP,WP,UN,VN,WN
CPU
Fo 1nF 1nF VPC, VNC(Logic)
Note : RC coupling at each input (parts shown dotted) may change depending on the PWM control scheme used in the application and on the wiring impedances of the application's printed circuit board.
Sep. 2001
MITSUBISHI SEMICONDUCTOR
PS21255-E
TRANSFER-MOLD TYPE INSULATED TYPE
Fig. 7 TYPICAL DIP-IPM APPLICATION CIRCUIT EXAMPLE
C1: Tight tolerance temp - compensated electrolytic type; C2,C3: 0.22~2 F R-category ceramic capacitor for noise filtering
5V line
C2 C1
VUFB VUFS VP1
VCC VB HO VS
DIP-IPM
P
C3
UP
IN COM
C2
U
VVFB
C1
VVFS VP1
VCC IN VB HO VS
C3
VP
C2 COM
V
VWFB
C1
M
C P U U N I T
VWFS VP1
VCC VB HO VS
C3
WP
IN
VPC
COM
W
UOUT C3
VN1
VCC
5V line VOUT
UN VN WN Fo VNC
UN VN WN Fo GND VNO CIN CFO WOUT
If this wiring is too long, short circuit might be caused.
N C CFO CIN B C5 R1 Shunt resistor N1 C4(CFO)
15V line
A
The long wiring of GND might generate noise on input signals and cause IGBT to be malfunctioned.
If this wiring is too long, the SC level fluctuation might be larger and cause SC malfunction.
Note 1 : To prevent the input signals oscillation, an RC coupling at each input is recommended, and the wiring of each input should be as short as possible. (Less than 2cm) 2 : By virtue of integrating an application specific type HVIC inside the module, direct coupling to CPU terminals without any opto-coupler or transformer isolation is possible. 3 : FO output is open collector type. This signal line should be pulled up to the positive side of the 5V power supply with approximately 5.1k resistance. 4 : FO output pulse width should be decided by connecting an external capacitor between CFO and VNC terminals (CFO). (Example : CFO = 22 nF tFO = 1.8 ms (typ.)) 5 : Each input signal line should be pulled up to the 5V power supply with approximately 4.7k resistance (other RC coupling circuits at each input may be needed depending on the PWM control scheme used and on the wiring impedances of the system's printed circuit board). Approximately a 0.22~2F by-pass capacitor should be used across each power supply connection terminals. 6 : To prevent errors of the protection function, the wiring of A, B, C should be as short as possible. 7 : In the recommended protection circuit, please select the R1C5 time constant in the range 1.5~2s. 8 : Each capacitor should be put as nearby the pins of the DIP-IPM as possible. 9 : To prevent surge destruction, the wiring between the smoothing capacitor and the P&N1 pins should be as short as possible. Approximately a 0.1~0.22F snubber capacitor between the P&N1 pins is recommended.
Sep. 2001

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